Dr. Nicolas Possémé Profile

Dr. Nicolas Possémé

at CEA-LETI

SPIE Involvement:

Conference Program Committee | Author

Publications (9)

PROCEEDINGS ARTICLE | March 19, 2018

Precise control of template affinity achieved by UV-assisted graphoepitaxy approach on silicon nanowires applications

Proc. SPIE. 10584, Emerging Patterning Technologies 2018

KEYWORDS: Polymethylmethacrylate, Etching, Ultraviolet radiation, Silicon, Scanning electron microscopy, Surface properties, Line width roughness, Directed self assembly, Plasma, Nanowires

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PROCEEDINGS ARTICLE | April 27, 2017

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)

Proc. SPIE. 10144, Emerging Patterning Technologies

KEYWORDS: Lithography, Electron beam lithography, FT-IR spectroscopy, Ions, Silicon, Microelectronics, Ion implantation, Integrated circuits, Wet etching, Ion beam lithography

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Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration’s requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures.

In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one.

In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that “infinite” selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results.

The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

PROCEEDINGS ARTICLE | April 10, 2017

Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges

Proc. SPIE. 10149, Advanced Etch Technology for Nanopatterning VI

KEYWORDS: Lithography, Electron beam lithography, Etching, Line width roughness, Directed self assembly, Nanoimprint lithography, Critical dimension metrology, Photoresist processing, Semiconducting wafers, System on a chip

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SPIE Journal Paper | August 25, 2016

Surface affinity role in graphoepitaxy of lamellar block copolymers

Claveau, Guillaume , Quemere, Patrick , Argoud, Maxime , Hazart, Jerome , Pimenta-Barros, Patricia , Sarrazin, Aurelien , Posseme, Nicolas , Tiron, Raluca , Chevalier, Xavier , Nicolet, Celia , Navarro, Christophe

JM3 Vol. 15 Issue 03

KEYWORDS: Directed self assembly, Annealing, Polymethylmethacrylate, Line width roughness, Picosecond phenomena, Semiconducting wafers, Lithography, Optical lithography, Image registration, Plasma

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PROCEEDINGS ARTICLE | March 23, 2016

PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application

Proc. SPIE. 9782, Advanced Etch Technology for Nanopatterning V

KEYWORDS: Polymethylmethacrylate, Etching, Chemistry, Xenon, Directed self assembly, Plasma etching, Picosecond phenomena, Semiconducting wafers, Carbon monoxide, Plasma

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PROCEEDINGS ARTICLE | March 21, 2016

Surface affinity role in graphoepitaxy of lamellar block copolymers

Proc. SPIE. 9779, Advances in Patterning Materials and Processes XXXIII

KEYWORDS: Lithography, Optical lithography, Statistical analysis, Polymethylmethacrylate, Polymers, Annealing, Image registration, Photomasks, Line width roughness, Directed self assembly, Line edge roughness, Semiconducting wafers, Polymer thin films, 193nm lithography

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PROCEEDINGS ARTICLE | March 17, 2015

DSA planarization approach to solve pattern density issue

Proc. SPIE. 9428, Advanced Etch Technology for Nanopatterning IV

KEYWORDS: Polymethylmethacrylate, Etching, Dry etching, Chemistry, Scanning electron microscopy, Directed self assembly, Picosecond phenomena, Critical dimension metrology, Semiconducting wafers, Carbon monoxide

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PROCEEDINGS ARTICLE | March 28, 2014

Plasma etching and integration challenges using alternative patterning techniques for 11nm node and beyond

Proc. SPIE. 9054, Advanced Etch Technology for Nanopatterning III

KEYWORDS: Lithography, Electron beam lithography, Polymethylmethacrylate, Etching, Metals, Silicon, Chemistry, Photomasks, Picosecond phenomena, System on a chip

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