Color centers in diamond—especially group IV defects—have been advanced as a viable solid-state platform for quantum photonics and information technologies. We investigate the photodynamics and characteristics of germanium-vacancy (GeV) centers hosted in high-pressure high-temperature diamond nanocrystals. Through back-focal plane imaging, we analyze the far-field radiation pattern of the investigated emitters and derive a crossed-dipole emission, which is strongly aligned along one axis. We use this information in combination with lifetime measurements to extract the decay rate statistics of the GeV emitters and determine their quantum efficiency, which we estimated to be ∼ ( 22 ± 2 ) % . Our results offer further insight into the photodynamic properties of the GeV center in nanodiamonds and confirm its suitability as a desirable system for quantum technologies.
Optical quantum technology needs efficient sources for non-classical light. Solid-state emitters provide excellent mode purity, high brightness, and often also stable operation up to room temperature. At the same time the spin of individual impurities can be entangled with emitted photons. Nano-photonic structures can dramatically enhance the photon emission efficiency and thus the yield of quantum information processing tasks involving photons. One example is a node of a quantum repeater network.
In this presentation we address the issue of enhanced photon collection from optically active defects in the solid-state such as diamond  or two-dimensional material . We briefly introduce the emitters and then describe recent experiments where we couple them to dielectric/plasmonic antennas  and to SiO2/Si light collecting structures .
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 “Photodynamics of quantum emitters in hexagonal boron nitride revealed
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