Prof. Nikolaus Dietz Profile

Prof. Nikolaus Dietz

Professor of Physics at Georgia State Univ

Area of Expertise:

Solid State Physics , radiation interaction with matter , real-time optical diagnostics , Thin film growth , group III-nitride compound semiconductors , group II-IV-V2 chalcopyrites

Websites:

Company Website

Publications (19)

SPIE Conference Volume | December 7, 2017

Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems

PROCEEDINGS ARTICLE | October 10, 2017

Growth and characterization of GaN/AlGaN heterostructures on GaN substrate templates

Proc. SPIE. 10378, Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems

KEYWORDS: Avalanche photodetectors, Sensors, Reflectivity, Doping, Gallium nitride, Aluminum, Aluminum nitride, Metalorganic chemical vapor deposition, Heterojunctions, Instrument modeling

SPIE Conference Volume | December 13, 2016

Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems

PROCEEDINGS ARTICLE | November 2, 2016

Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation)

Proc. SPIE. 9954, Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems

KEYWORDS: Infrared imaging, Spectroscopy, Dielectrics, Imaging spectroscopy, Near field scanning optical microscopy, Super resolution microscopy, Infrared radiation, Indium gallium nitride, Heterojunctions, Near field optics

PROCEEDINGS ARTICLE | September 7, 2016

Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD

Proc. SPIE. 9954, Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems

KEYWORDS: FT-IR spectroscopy, Dielectrics, Nitrogen, Atomic force microscopy, Raman spectroscopy, Optoelectronics, Sapphire, Aluminum nitride, Indium nitride, Plasma

SPIE Conference Volume | October 8, 2015

Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

PROCEEDINGS ARTICLE | September 8, 2015

Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

Proc. SPIE. 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

KEYWORDS: FT-IR spectroscopy, Dielectrics, Nitrogen, Raman spectroscopy, Optoelectronics, Near field scanning optical microscopy, Indium gallium nitride, Molybdenum, Indium nitride, Plasma

SPIE Conference Volume | October 8, 2014

Thirteenth International Conference on Solid State Lighting

PROCEEDINGS ARTICLE | February 4, 2013

Room temperature GaN-based spin polarized emitters

Proc. SPIE. 8631, Quantum Sensing and Nanophotonic Devices X

KEYWORDS: Light emitting diodes, Ferromagnetics, Polarization, Ions, Magnetism, Electroluminescence, Oxygen, Gallium nitride, Gadolinium, Magnetic semiconductors

PROCEEDINGS ARTICLE | October 15, 2012

Effect of nucleation period on the physical properties of InN epilayers

Proc. SPIE. 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting

KEYWORDS: FT-IR spectroscopy, Spectroscopy, X-ray diffraction, Dielectrics, Nitrogen, Chemical vapor deposition, Raman spectroscopy, Optoelectronics, Reflectance spectroscopy, Indium nitride

PROCEEDINGS ARTICLE | October 15, 2012

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Proc. SPIE. 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting

KEYWORDS: FT-IR spectroscopy, Spectroscopy, Crystals, X-ray diffraction, Raman spectroscopy, Infrared spectroscopy, Optoelectronics, Phonons, Reflectance spectroscopy, Indium nitride

PROCEEDINGS ARTICLE | August 18, 2010

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

Proc. SPIE. 7784, Tenth International Conference on Solid State Lighting

KEYWORDS: Crystals, Indium, Nitrogen, Chemical vapor deposition, Raman spectroscopy, Infrared spectroscopy, Gallium nitride, Sapphire, Heterojunctions, Indium nitride

PROCEEDINGS ARTICLE | August 28, 2009

Al fraction induced effects on the capacitance characteristics of n+-GaN/AlxGa1-xN IR detectors

Proc. SPIE. 7467, Nanophotonics and Macrophotonics for Space Environments III

KEYWORDS: Infrared detectors, Infrared sensors, Sensors, Ultraviolet radiation, Interfaces, Gallium nitride, Capacitance, Aluminum, Heterojunctions, Absorption

PROCEEDINGS ARTICLE | August 18, 2009

Optical and structural properties of InN grown by HPCVD

Proc. SPIE. 7422, Ninth International Conference on Solid State Lighting

KEYWORDS: Sensors, Luminescence, Crystals, X-ray diffraction, Chemical vapor deposition, Raman spectroscopy, Gallium nitride, Sapphire, Chemical analysis, Indium nitride

PROCEEDINGS ARTICLE | September 26, 2007

Dual band HEIWIP detectors with nitride materials

Proc. SPIE. 6678, Infrared Spaceborne Remote Sensing and Instrumentation XV

KEYWORDS: Infrared sensors, Modulation, Sensors, Etching, Ultraviolet radiation, Gallium nitride, Infrared radiation, Aluminum, Ultraviolet detectors, Absorption

PROCEEDINGS ARTICLE | September 21, 2005

Advanced computational modeling for growing III-V materials in a high-pressure chemical vapor-deposition reactor

Proc. SPIE. 5912, Operational Characteristics and Crystal Growth of Nonlinear Optical Materials II

KEYWORDS: Indium, Nitrogen, Chemistry, Computer simulations, 3D modeling, Adsorption, Chemical reactions, Medium wave, Indium nitride, Temperature metrology

PROCEEDINGS ARTICLE | September 21, 2005

Solid-state molecular sensors (SSMS) based on confined III-IV-V2 multi-functional heterostructures

Proc. SPIE. 5912, Operational Characteristics and Crystal Growth of Nonlinear Optical Materials II

KEYWORDS: Second-harmonic generation, Optical parametric oscillators, Ferromagnetics, Waveguides, Sensors, Silicon, Nonlinear optics, Phase matching, Gallium, Heterojunctions

Nonlinear confined (optical and/or electrical) heterostructures based on III-IV-V2 chalcopyrite (CP) thin films and/or embedded CP materials offer unique advantages over group III-V and IV linear structures. These stem from the birefringent nature and the lower crystal symmetry of the CP semiconductors. As an example, this property is responsible three-wave nonlinear parametric processes (a second-order nonlinear effect) and very high values of the second-order hyperpolarizabilities. The recent discovery of room-temperature ferromagnetism in diluted magnetic CP semiconductors adds an additional functionality to this material system that makes possible the construction of novel magneto-optical device structures based on ferromagnetic nanocomposites and confined ferromagnetic heterostructures, which can be embedded in confined birefringent layers. Such structures are the basic elements for advanced "Solid-State Molecular Sensor" (SSMS) device structures. Rugged, miniaturized SSMS structures can be constructed which are based on a unique, optically confined birefringent, group II-IV-V2 CP heterostructure technology. This system identifies target chemicals and biological molecules in real-time under ambient conditions. It can detect and discriminate between numerous and varied molecular species by employing resonant phase- and/or amplitude sensitive detection over a large, tunable spectral range. The SSMS can be made sensitive to a specific group of molecules with appropriate phase matching conditions. Its response is unlike that of a linear waveguide sensor in two primary areas: change of frequency output, and intensity of the output light generated. Both signals are generated in a nonlinear second harmonic generation process sensitive to small changes in the phase matching conditions. Potential applications include compact ultra-sensitive sensors, nonlinear optical modulators, magnetic photonic crystals, magneto-optical switches, detectors, and spin electronic devices.

PROCEEDINGS ARTICLE | September 21, 2005

The growth of InN and related alloys by high-pressure CVD

Proc. SPIE. 5912, Operational Characteristics and Crystal Growth of Nonlinear Optical Materials II

KEYWORDS: Ultraviolet radiation, Indium, Nitrogen, Chemistry, Chemical vapor deposition, Optoelectronics, Aluminum, Gallium, Indium nitride, Absorption

PROCEEDINGS ARTICLE | March 25, 2005

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Proc. SPIE. 5732, Quantum Sensing and Nanophotonic Devices II

KEYWORDS: Nanostructures, Ferromagnetics, Annealing, Silicon, Magnetism, Gallium nitride, Manganese, Metalorganic chemical vapor deposition, Gallium, Magnetic semiconductors

Showing 5 of 19 publications

Conference Committee Involvement (8)

Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems

9 August 2017 | San Diego, California, United States

Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems

31 August 2016 | San Diego, California, United States

Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

12 August 2015 | San Diego, California, United States

Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems

20 August 2014 | San Diego, California, United States

LED-based Illumination Systems

26 August 2013 | San Diego, California, United States

Showing 5 of 8 published special sections

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