We discuss techniques for analyzing digital elevation models (DEMs) of surface topography of microelectronics objects exemplified by silicon wafers and wafer-based structures, such as SiO2/Si wafers, silicon–glass assemblies, thin film membranes formed by the Bosch process, and Ni–W films on Bi2Te3 substrate. We describe approaches to calculate and analyze wafer curvature using (1) data of curvature of DEM profiles, (2) second partial derivatives computed from DEMs, as well as (3) geomorphometric methods (e.g., analysis of digital models and maps of Gaussian, mean, and principal curvatures as well as other morphometric variables derived from DEMs). We show possibilities of using digital models and maps of catchment area derived from DEMs to analyze location of microcrests of wafer surface. We demonstrate capabilities of these techniques for analyzing volumetric defects. We also present specific recommendations for handling experimental data, such as DEM smoothing by approximation and processing DEMs with voids.
This paper shows the result of working out the operations of temporary bonding of Si-Si wafers and Si-glass wafers. The influence of materials and parameters of technological operations on the warpage of the resulting structures was investigated in order to reduce the bending of the device wafer when performing the processes of temporary bonding and thinning.
A three-dimensional numerical model of a thermal accelerometer with a thermal resistance effect in a sensitive element on a thin-film multilayer membrane based on MEMS technology has been developed and tested. The change in temperature difference on thermistors in the acceleration range from 1 to 10g and the applicability of the proposed technological solution for the implementation of thermal inertial systems are analyzed. The results obtained can be used for the optimization and development of a multi-axis thermal accelerometer.
Full fabrication process of nanoscale vacuum channel and gate-all-around nanowire transistors at the 45, 32 and 22 nm technology nodes was simulated in Silvaco TCAD. Comparative analysis of operation modes was made on the basis of the obtained structures. It was shown that nanoscale gate-all-around transistor has sufficiently low power consumption while vacuum channel field effect transistor makes it possible to achieve performance that exceeds performance which can be obtained from the transistor with semiconductor channel. The combination of the above technologies can serve as approach to the creation of low-power and high-speed nanoscale vacuum devices using established complementary metal-oxide-semiconductor (CMOS) technology.
The article describes the status of work on the project of maskless x-ray nanolithography using a chip of transmission microfocus X-ray tubes with field emission cathodes as a dynamic mask device. The basic principles of this method of projection photolithography are considered, and the estimations of the expected throughput of the process are given. A noticeable part of the article is devoted to a model for numerical simulation of the emission characteristics of thin film targets at their exitation with a low energy electrons beam. The experimental results on measurements of the conversion efficiency of electrons energy into soft X-ray radiation of berillium Kα line (λ=11.4 nm) are presented. Other promising materials which could be used as efficient film targets for the mentioned design of maskless nanolithography are proposed.
A method to measure mechanical stress in thin films was proposed. Method is based on the geometry variance of thin film’s fragment after it’s been released from substrate. A scanning electron microscope (SEM) was used to measure linear dimensions. Samples were prepared with help of focused ion beam (FIB). Mechanical stress of silicon nitride thin film measured using our method is -1.64 GPa, relative measurement error estimated as 1.2%. Measured value of stress correlates with other method’s existing data. Method can be applied to various materials, that are being used in MEMS technology.
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