It was very different between the etching rate of large patterns and narrow grooves on InGaAs/InP materials by inductively
coupled plasma (ICP) technology. With the aim of high etching rate, good morphology, smooth interfaces and fewer
defects, the etching mechanisms of ICP via changing gas flow rate, chamber pressure and RF power have been analyzed.
Some recipes have been found to achieve a narrow stripe and deep groove with good uniformity, interface and morphology
via high etching rate and good selectivity. The different phenomena during etching the large patterns and narrow grooves
have been explained and the sets of parameters have been summarized that is adapted to the array device on InGaAs/InP
materials during the ICP process.