Mr. Noriaki Fujitani Profile

Noriaki Fujitani

at Nissan Chemical Corp

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 17 April 2014 Paper

OBPL for the best solution to resist outgassing and out-of-band issues in EUVL toward 1Xnm hp

Noriaki Fujitani, Rikimaru Sakamoto, Takafumi Endo, Hiroaki Yaguchi, Ryuji Onishi

Proceedings Volume 9048, 90482H (2014) https://doi.org/10.1117/12.2046244

KEYWORDS: Extreme ultraviolet lithography, Contamination, Lithography, Optical lithography, Extreme ultraviolet, Critical dimension metrology, Deep ultraviolet, Photoresist processing, Line width roughness, Manufacturing

Read Abstract +

Extreme-UV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond, however there are many critical issues to solve in the light source, tools, mask and photo resist. Regarding the development of a photo resist, it is necessary for high volume manufacturing (HVM) to improve LWR, resolution limit and sensitivity. Additionally, concerning about deterioration of a patterning performance by Out-of-Band (OoB) light existing in the EUV light, and contamination problem of exposure tool due to the photo resist outgassing are the key issues which have to be resolved toward HVM by EUVL. Especially, the outgassing problem can become a significant issue for fine patterning under high dose exposure condition. This paper proposes the novel solution for these critical issues with the application of a top coat material which is named OBPL (Outgassing & out-of-Band Protection Layer) on photo resist. The key characteristics of OBPL material are to have a role in protection against the OoB adverse effect to keep up the photo resist performance, to suppress the outgassing from photo resist as a barrier layer and to enhance the lithographic performance such as photo resist profile and process window. In designing the OBPL material, the optical property needs having not only the high absorbance of DUV (Deep-UV) light in OoB range but also high transmittance for 13.5nm wavelength to prevent the sensitivity loss. Furthermore, it is found that the polymer backbone affects the outgassing barrier capability in previous evaluation. Based on these investigations, a state-of-the-art OBPL achieves quite a positive lithographic result with sufficient OoB absorption and outgassing suppression. Moreover, this material has applicability to all types of photo resist including NTD (Negative-Tone Development) process. This paper describes the result of the feasibility study for OBPL and the lithography performance with EUV full field scanner.

Proceedings Article | 17 April 2014 Paper

Evaluations of negative tone development resist and process for EUV lithography

Toshiya Takahashi, Noriaki Fujitani, Toshiro Itani

Proceedings Volume 9048, 90482C (2014) https://doi.org/10.1117/12.2046175

KEYWORDS: Line width roughness, Lithography, Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist processing, Liquids, Lithographic illumination, Capillaries, Etching

Read Abstract +

Proceedings Article | 27 March 2014 Paper

EUV lithography and etching performance enhancement by EUV sensitive Si hard mask (EUV Si-HM) for 1Xnm hp generation

Wataru Shibayama, Shuhei Shigaki, Noriaki Fujitani, Ryuji Onishi, Rikimaru Sakamoto

Proceedings Volume 9051, 905116 (2014) https://doi.org/10.1117/12.2046475

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Etching, System on a chip, Roentgenium, Photomasks, Line width roughness, Lithography, Chromophores, Silicon

Read Abstract +

Proceedings Article | 29 March 2013 Paper

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

Noriaki Fujitani, Rikimaru Sakamoto, Takafumi Endo, Ryuji Onishi, Tokio Nishita, Hiroaki Yaguchi, Bang-Ching Ho

Proceedings Volume 8682, 868209 (2013) https://doi.org/10.1117/12.2011489

KEYWORDS: Extreme ultraviolet lithography, Transmittance, Lithography, Contamination, Thin film coatings, Chemical species, Extreme ultraviolet, Optical lithography, Absorbance, Deep ultraviolet

Read Abstract +

Proceedings Article | 28 March 2012 Paper

The novel spin-on hard mask and ultrathin UL material for EUVL

Rikimaru Sakamoto, Hiroaki Yaguchi, Syuhei Shigaki, Suguru Sassa, Noriaki Fujitani, Takafumi Endo, Ryuji Onishi, Bang Ching Ho

Proceedings Volume 8325, 832512 (2012) https://doi.org/10.1117/12.916328

KEYWORDS: Extreme ultraviolet lithography, Coating, Polymers, Roentgenium, Lithography, Extreme ultraviolet, Etching, Line width roughness, Photomasks, Silica

Read Abstract +

Proceedings Article | 23 March 2012 Paper

The novel top-coat material for RLS trade-off reduction in EUVL

Ryuji Onishi, Rikimaru Sakamoto, Noriaki Fujitani, Takafumi Endo, Bang-ching Ho

Proceedings Volume 8322, 83222D (2012) https://doi.org/10.1117/12.916341

KEYWORDS: Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Absorption, Transmittance, Line width roughness, Optical properties, Deep ultraviolet, Contamination, Light

Read Abstract +

Proceedings Article | 8 April 2011 Paper

Development of under layer material for EUV lithography

Rikimaru Sakamoto, Bang-Ching Ho, Noriaki Fujitani, Takafumi Endo, Ryuji Ohnishi

Proceedings Volume 7969, 79692F (2011) https://doi.org/10.1117/12.878734

KEYWORDS: Extreme ultraviolet lithography, Polymers, Lithography, Extreme ultraviolet, Line width roughness, Coating, Diffusion, Line edge roughness, Critical dimension metrology, Interfaces

Read Abstract +

Proceedings Article | 12 December 2009 Paper

Bottom-anti-reflective coatings (BARC) for LFLE double patterning process

Rikimaru Sakamoto, Takafumi Endo, Bang-Ching Ho, Shigeo Kimura, Tomohisa Ishida, Masakazu Kato, Noriaki Fujitani, Ryuji Onishi, Yoshiomi Hiroi, Daisuke Maruyama

Proceedings Volume 7520, 75201Y (2009) https://doi.org/10.1117/12.837156

KEYWORDS: Lithography, Double patterning technology, Polymers, Photoresist processing, Chromophores, Scanning electron microscopy, Reflectivity, Thin film coatings, Critical dimension metrology, Immersion lithography

Read Abstract +

Proceedings Article | 4 December 2008 Paper

A cost effective spin on sidewall material alternative to the CVD sidewall process

Daisuke Maruyama, Bang-Ching Ho, Sangwoong Yoon, Rikimaru Sakamoto, Yasushi Sakaida, Keisuke Hashimoto, Noriaki Fujitani, Hiroaki Yaguchi, Koutastu Matsubara

Proceedings Volume 7140, 714037 (2008) https://doi.org/10.1117/12.804490

KEYWORDS: Silicon, Thin film coatings, Chemical vapor deposition, Ultraviolet radiation, Double patterning technology, Lithography, Semiconducting wafers, Resistance, Interfaces, 193nm lithography

Read Abstract +

Showing 5 of 9 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years