This paper demonstrated a multiwavelength fibre laser incorporating semiconductor optical amplifier in nonlinear optical loop mirror with polarisation maintaining fibre. The configuration comprised 3-dB optical coupler, semiconductor optical amplifier, and a 2-meter length of polarisation maintaining fibre. The range of semiconductor optical amplifier varied from 160mA to 180mA to determine and evaluate their performance in terms of peak power and stability. Based on the results, the power fluctuation for different wavelengths at 1555nm, 1558nm and 1561nm was less than 5dB. In addition, the output peak power increased as the semiconductor optical amplifier current increased. The highest output peak power was - 2.093dBm at 180mA with lasing wavelength of 1558nm. The stability test showed that the multiwavelength fibre laser system was stable at room temperature within 60 minutes. Furthermore, the polarisation maintaining fibre that acts as gain medium has a broader bandwidth operating in the C-band to L-band at room temperature.
In this paper, cadmium sulfide (CdS) light emitting diodes (LED) die performance based on different structures configuration are simulated and investigated. The CdS LED extensively play an essential role in many applications, especially for the light sensor. The CdS LED die involves in this study are 10 μm height cylindrical circular, 9μm height dome-shaped, 10 μm height dome-shaped and 11 μm height dome-shaped structures. Increasing the height of the dome slightly changes the doping concentration and its ratio. Changes in the ratio of p-type and n-type affect the process recombination of electrons and holes. Thus, this produce high emission rate and optimum biased voltage. For the 10 μm height cylindrical circular structure, the threshold voltage of 1.95 V is recorded. Meanwhile, the 9μm height of domeshaped, 10μm height of dome-shaped and 11μm height of dome-shaped, the minimum voltage required to turn on the devices are 1.95 V, 1.96 V, and 1.975 V, respectively. It was found that dome-shaped with 11μm height generated the highest total emission rate for LED efficiency compared to other structures.
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