Dr. Obert R. Wood II Profile

Dr. Obert R. Wood II

Distinguish Member of Technical Staff at GLOBALFOUNDRIES, Inc.

SPIE Involvement:

Fellow status | Conference Program Committee | Conference Chair | Conference Co-Chair | Author | Editor

Area of Expertise:

extreme-ultraviolet lithography , ultra-high intensity lasers , laser surgery

Profile Summary

Obert Wood is a Principal Member of Technical Staff in the Strategic Lithography Technology Department at GLOBALFOUNDRIES. He was a Member of Technical Staff at Bell Laboratories for 34 years and has extensive experience in extreme-ultraviolet lithography, ultra-high intensity lasers and laser surgery. Obert received his B.S., M.S. and Ph.D. Degrees from the University of California at Berkeley in Electrical Engineering in 1964, 1965 and 1969. He is author or co-author of 304 technical papers and inventor or co-inventor of 36 patents and is a fellow of the Optical Society of America and SPIE, a senior member of IEEE, and a member of the AAAS, the American Physical Society, and the American Vacuum Society.

Publications (98)

PROCEEDINGS ARTICLE | October 9, 2018

Rapid image-based pupil plane characterization for EUV lithography systems

Proc. SPIE. 10809, International Conference on Extreme Ultraviolet Lithography 2018

KEYWORDS: Lithography, Monochromatic aberrations, Metrology, Principal component analysis, Detection and tracking algorithms, Imaging systems, Wavefronts, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers

PROCEEDINGS ARTICLE | March 27, 2018

Evaluation of EUV mask impacts on wafer line-edge roughness using aerial and SEM image analyses

Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX

KEYWORDS: Speckle, Image processing, Scanners, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Semiconducting wafers, Stochastic processes

PROCEEDINGS ARTICLE | March 19, 2018

Holistic analysis of aberration induced overlay error in EUV lithography

Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX

KEYWORDS: Lithography, Diffraction, Scanners, Error analysis, Wavefronts, Zernike polynomials, Photomasks, Extreme ultraviolet lithography, Aberration theory, Overlay metrology

SPIE Journal Paper | October 30, 2017

Free-electron laser emission architecture impact on extreme ultraviolet lithography

Erik Hosler, Obert Wood, William Barletta

JM3 Vol. 16 Issue 04

KEYWORDS: Free electron lasers, Extreme ultraviolet lithography, Electron beams, Extreme ultraviolet, Electrons, Lithography, Monochromators, Light sources, Scanners, Optical resonators

PROCEEDINGS ARTICLE | October 16, 2017

Measurement of through-focus EUV pattern shifts using the SHARP actinic microscope

Proc. SPIE. 10450, International Conference on Extreme Ultraviolet Lithography 2017

KEYWORDS: Lithography, Microscopes, Optical lithography, Image segmentation, Reflectivity, Image analysis, 3D metrology, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography

PROCEEDINGS ARTICLE | October 16, 2017

Rigorous simulation of EUV mask pellicle

Proc. SPIE. 10451, Photomask Technology

KEYWORDS: Temporal coherence, Particles, Nickel, Pellicles, Transmittance, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, High volume manufacturing, Nanoimprint lithography

SPIE Journal Paper | June 19, 2017

Image-based pupil plane characterization via a space-domain basis

Zac Levinson, Andrew Burbine, Erik Verduijn, Obert Wood, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Bruce Smith

JM3 Vol. 16 Issue 02

KEYWORDS: Systems modeling, Data modeling, Lithography, Tolerancing, Binary data, Photomasks, Image transmission, Semiconductors, Reticles

PROCEEDINGS ARTICLE | March 31, 2017

Free-electron laser emission architecture impact on EUV lithography

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Lithography, Electron beams, Light sources, Imaging systems, Scanners, Electrons, Manufacturing, Laser applications, Amplifiers, Optical resonators, Extreme ultraviolet, Extreme ultraviolet lithography, Monochromators, Semiconducting wafers, Free electron lasers, Plasma

Laser-produced plasma (LPP) EUV sources have demonstrated approximately 125 W at customer sites, establishing confidence in EUV lithography as a viable manufacturing technology. However, beyond the 7 nm technology node existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half-field exposures) and/or EUV multi-patterning (requiring increased wafer throughput proportional to the number of exposure passes. Both development paths will require a substantial increase in EUV source power to maintain the economic viability of the technology, creating an opportunity for free-electron laser (FEL) EUV sources. FEL-based EUV sources offer an economic, high-power/single-source alternative to LPP EUV sources. Should free-electron lasers become the preferred next generation EUV source, the choice of FEL emission architecture will greatly affect its operational stability and overall capability.<p> </p> A near-term industrialized FEL is expected to utilize one of the following three existing emission architectures: (1) selfamplified spontaneous emission (SASE), (2) regenerative amplification (RAFEL), or (3) self-seeding (SS-FEL). Model accelerator parameters are put forward to evaluate the impact of emission architecture on FEL output. Then, variations in the parameter space are applied to assess the potential impact to lithography operations, thereby establishing component sensitivity. The operating range of various accelerator components is discussed based on current accelerator performance demonstrated at various scientific user facilities. Finally, comparison of the performance between the model accelerator parameters and the variation in parameter space provides a means to evaluate the potential emission architectures. A scorecard is presented to facilitate this evaluation and provide a framework for future FEL design and enablement for EUV lithography applications.

PROCEEDINGS ARTICLE | March 27, 2017

Monte Carlo sensitivity analysis of EUV mask reflectivity and its impact on OPC accuracy

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Reflectors, Statistical analysis, Data modeling, Silicon, Reflectivity, Surface roughness, Monte Carlo methods, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Molybdenum, Electromagnetic theory, Scanning tunneling microscopy

PROCEEDINGS ARTICLE | March 27, 2017

A study on EUV reticle surface molecular contamination under different storage conditions in a HVM foundry fab

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Carbon, Reticles, Optical lithography, Contamination, Air contamination, Ions, Reflectivity, Pellicles, Extreme ultraviolet, Extreme ultraviolet lithography, Atmospheric particles, Ruthenium

PROCEEDINGS ARTICLE | March 24, 2017

Vote-taking for EUV lithography: a radical approach to mitigate mask defects

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Lithography, Multilayers, Reticles, Opacity, Silicon, Coating, Reflectivity, Scanning electron microscopy, Pellicles, Bridges, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, High volume manufacturing, Molybdenum, Semiconducting wafers

PROCEEDINGS ARTICLE | March 24, 2017

Printability and actinic AIMS review of programmed mask blank defects

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Inspection, Chromium, Atomic force microscopy, Scanning electron microscopy, Printing, Bridges, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

SPIE Journal Paper | June 28, 2016

Measurement of EUV lithography pupil amplitude and phase variation via image-based methodology

Zachary Levinson, Erik Verduijn, Obert Wood, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Bruce Smith

JM3 Vol. 15 Issue 02

KEYWORDS: Zernike polynomials, Extreme ultraviolet lithography, Extreme ultraviolet, Monochromatic aberrations, Imaging systems, Photomasks, Wavefronts, Metrology, Microscopes, Statistical analysis

PROCEEDINGS ARTICLE | May 10, 2016

Thin absorber EUV photomask based on mixed Ni and TaN material

Proc. SPIE. 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology

KEYWORDS: Lithography, Nanoparticles, Etching, Nickel, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanocomposites, Absorption

PROCEEDINGS ARTICLE | March 18, 2016

Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Logic, Extreme ultraviolet lithography, Source mask optimization, Optical proximity correction, SRAF, Nanoimprint lithography, Line edge roughness, Semiconducting wafers, Stochastic processes, Resolution enhancement technologies

PROCEEDINGS ARTICLE | March 18, 2016

Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Reflectors, Lithography, Multilayers, Interfaces, Silicon, Optical coatings, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Neodymium, Molybdenum, Ruthenium

PROCEEDINGS ARTICLE | March 18, 2016

Image-based pupil plane characterization via principal component analysis for EUVL tools

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Semiconductors, Lithography, Monochromatic aberrations, Metrology, Principal component analysis, Detection and tracking algorithms, Data modeling, Image processing, Interferometry, Computer simulations, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Systems modeling

PROCEEDINGS ARTICLE | November 3, 2015

EUV actinic brightfield mask microscopy for predicting printed defect images

Proc. SPIE. 9635, Photomask Technology 2015

KEYWORDS: Defect detection, Visualization, Microscopy, Inspection, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Phase measurement, Semiconducting wafers, Phase shifts

SPIE Journal Paper | July 13, 2015

Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication

Lei Sun, Wenhui Wang, Genevieve Beique, Min Sung, Obert Wood, Ryoung-Han Kim

JM3 Vol. 14 Issue 03

KEYWORDS: Line edge roughness, Line width roughness, Semiconductors, Reactive ion etching, Double patterning technology, Lithography, Oxides, Extreme ultraviolet lithography, Optical inspection, Visualization

PROCEEDINGS ARTICLE | July 9, 2015

Mask blank defect printability comparison using optical and SEM mask and wafer inspection and bright field actinic mask imaging

Proc. SPIE. 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII

KEYWORDS: Wafer-level optics, Microscopes, Inspection, Scanning electron microscopy, Optical inspection, Wafer inspection, Photomasks, Extreme ultraviolet, Semiconducting wafers, EUV optics

SPIE Conference Volume | April 23, 2015

Extreme Ultraviolet (EUV) Lithography VI

PROCEEDINGS ARTICLE | March 19, 2015

Application of frequency domain line edge roughness characterization methodology in lithography

Proc. SPIE. 9424, Metrology, Inspection, and Process Control for Microlithography XXIX

KEYWORDS: Semiconductors, Lithography, Visualization, Etching, Optical inspection, Line width roughness, Line edge roughness, Neodymium, Semiconducting wafers, Edge roughness

PROCEEDINGS ARTICLE | March 16, 2015

Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Reflectors, Multilayers, Ions, Silicon, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Neodymium, Ruthenium

PROCEEDINGS ARTICLE | March 16, 2015

A method of image-based aberration metrology for EUVL tools

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Microscopes, Monochromatic aberrations, Metrology, Imaging systems, Wavefronts, Zernike polynomials, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Phase measurement

PROCEEDINGS ARTICLE | March 13, 2015

Considerations for a free-electron laser-based extreme-ultraviolet lithography program

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Lithography, Electron beams, Light sources, Scanners, X-rays, Extreme ultraviolet, Extreme ultraviolet lithography, Free electron lasers, Cryogenics, Prototyping

PROCEEDINGS ARTICLE | October 15, 2014

Imaging impact of multilayer tuning in EUV masks, experimental validation

Proc. SPIE. 9235, Photomask Technology 2014

KEYWORDS: Diffraction, Calibration, Scanners, Reflectivity, 3D modeling, 3D metrology, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

SPIE Conference Volume | April 25, 2014

Extreme Ultraviolet (EUV) Lithography V

PROCEEDINGS ARTICLE | April 17, 2014

Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Mirrors, Optical lithography, Imaging systems, Scanners, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, 3D image processing

SPIE Journal Paper | December 17, 2013

Review of resist-based flare measurement methods for extreme ultraviolet lithography

Lei Sun, Obert Wood, Erik Verduijn, Mandeep Singh, Wenhui Wang, Ryoung-Han Kim, Pawitter Mangat, Hui Peng Koh, Harry Levinson

JM3 Vol. 12 Issue 04

KEYWORDS: Point spread functions, Modulation transfer functions, Extreme ultraviolet lithography, Reticles, Extreme ultraviolet, Light scattering, Scattering, Photomasks, Scanning electron microscopy, Semiconducting wafers

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SPIE Journal Paper | October 2, 2013

Extreme ultraviolet lithography resist-based aberration metrology

Germain Fenger, Lei Sun, Sudharshanan Raghunathan, Obert Wood, Bruce Smith

JM3 Vol. 12 Issue 04

KEYWORDS: Monochromatic aberrations, Extreme ultraviolet lithography, Metrology, Wavefronts, Diffraction, Data modeling, Semiconducting wafers, Error analysis, Lithography, Zernike polynomials

SPIE Conference Volume | April 26, 2013

Extreme Ultraviolet (EUV) Lithography IV

PROCEEDINGS ARTICLE | April 8, 2013

Enhancing resolution with pupil filtering for projection printing systems with fixed or restricted illumination angular distribution

Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV

KEYWORDS: Optical filters, Reticles, Imaging systems, Printing, Image filtering, Photomasks, Stray light, Photoresist processing, Semiconducting wafers, Resolution enhancement technologies

PROCEEDINGS ARTICLE | April 1, 2013

Mask 3D effects and compensation for high NA EUV lithography

Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV

KEYWORDS: Lithography, Scanners, Reflectivity, 3D modeling, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Semiconducting wafers, Systems modeling

PROCEEDINGS ARTICLE | April 1, 2013

EUVL resist-based aberration metrology

Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV

KEYWORDS: Lithography, Monochromatic aberrations, Metrology, Data modeling, Wavefronts, Extreme ultraviolet lithography, Critical dimension metrology, Spherical lenses, Semiconducting wafers, Binary data

PROCEEDINGS ARTICLE | April 1, 2013

Application of phase shift focus monitor in EUVL process control

Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV

KEYWORDS: Microscopes, Diffraction, Etching, Inspection, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Phase shifts, Diffraction gratings

SPIE Conference Volume | April 26, 2012

Extreme Ultraviolet (EUV) Lithography III

PROCEEDINGS ARTICLE | April 17, 2012

Towards the optical inspection sensitivity optimization of EUV masks and EUVL-exposed wafers

Proc. SPIE. 8352, 28th European Mask and Lithography Conference

KEYWORDS: Mirrors, Defect detection, Inspection, Reflectivity, Scanning electron microscopy, Optical inspection, Photomasks, Extreme ultraviolet, Semiconducting wafers, Defect inspection

Pending the availability of actinic inspection tools, optical inspection tools with 193 nm DUV illumination wavelength are currently used to inspect EUV masks and EUVL-exposed wafers. Due to strong optical absorption, DUV photons can penetrate only a few surface layers of EUV masks, making them sub-optimal for detecting hidden defects embedded within the sub-layers of the mask, the so-called phase defects. Although these phase defects may not be detected by optical inspection tools, they may print on the wafer. Conversely, false and nuisance defects which may not print on the wafer may be detected by optical inspection tools, and by so doing, degrade the inspection sensitivity of the tool to real and critical defects. This paper discusses approaches to optimizing the optical inspection sensitivity of EUV masks, with a view to overcoming some of the absorption limitations of the inspection wavelength and also with a view to enhancing the imaging contrast of the reflected light between the low reflective absorber/antireflection coating stack and the moderately reflective mirror surface of Mo/Si bilayers, capped with a thin Ru layer, and which serves to protect the mirror surface from damage and contamination during mask fabrication and wafer printing processes. The effects of mask absorber/ARC stack thickness on optical inspection contrast are simulated using rigorous coupled wave analysis (RCWA), and compared to experimental results. EUV masks with thin absorber/ARC stacks are observed to have higher inspection contrast, up to 15 % higher than their thicker counterparts, especially as the feature pitch gets smaller. Blank defect inspection performance of tools such as the Siemens DFX40 tool and KLA 617 Teron tool equipped with Phasur module are compared, and correlated with patterned mask inspection data generated from KLA 617 Teron tool. Patterned mask defect sensitivities to the tune of 40 nm and 90 nm were obtained on thin and thick absorber/ARC stacks, respectively. The defect location accuracy of the Teron 617 tool is better than 250 nm (3σ), while the alignment repeatability of the Teron 617 on the fiducials is better than 60 nm (3σ). Printability of mask blank and patterned mask defects on exposed wafers in terms of what and where the defects print, are also presented. Four masks with different absorber and antireflection coating thicknesses, some with substrate and absorber programmed defects of different types and sizes, were fabricated and used to expose resistcoated SiN substrate wafers on full field ASML EUV scanners.

PROCEEDINGS ARTICLE | March 23, 2012

EUV OPC for the 20-nm node and beyond

Proc. SPIE. 8322, Extreme Ultraviolet (EUV) Lithography III

KEYWORDS: Lithography, Deep ultraviolet, Printing, Monte Carlo methods, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Critical dimension metrology, Semiconducting wafers

PROCEEDINGS ARTICLE | March 14, 2012

Insertion strategy for EUV lithography

Proc. SPIE. 8322, Extreme Ultraviolet (EUV) Lithography III

KEYWORDS: Lithography, Optical lithography, Metals, Manufacturing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Immersion lithography, Semiconducting wafers, Overlay metrology

PROCEEDINGS ARTICLE | April 20, 2011

EUV defect characterization study on post litho and etch for 1x and 2x node processes

Proc. SPIE. 7971, Metrology, Inspection, and Process Control for Microlithography XXV

KEYWORDS: Lithography, Deep ultraviolet, Polarization, Scattering, Etching, Light scattering, Inspection, Bridges, Extreme ultraviolet, Semiconducting wafers

PROCEEDINGS ARTICLE | April 16, 2011

Revisit pattern collapse for 14nm node and beyond

Proc. SPIE. 7972, Advances in Resist Materials and Processing Technology XXVIII

KEYWORDS: Lithography, Electron beam lithography, Data modeling, Capillaries, Glasses, Scanning electron microscopy, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist processing, Semiconducting wafers

PROCEEDINGS ARTICLE | April 6, 2011

EUV masks under exposure: practical considerations

Proc. SPIE. 7969, Extreme Ultraviolet (EUV) Lithography II

KEYWORDS: Particles, Manufacturing, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Line edge roughness, Semiconducting wafers, Ruthenium

PROCEEDINGS ARTICLE | April 6, 2011

EUV OPC for 56nm metal pitch

Proc. SPIE. 7969, Extreme Ultraviolet (EUV) Lithography II

KEYWORDS: Calibration, Distortion, Scanning electron microscopy, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Photoresist processing, Back end of line

PROCEEDINGS ARTICLE | September 25, 2010

A lifetime study of EUV masks

Proc. SPIE. 7823, Photomask Technology 2010

KEYWORDS: Metrology, Particles, Inspection, Reflectivity, Scatterometry, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Ruthenium

PROCEEDINGS ARTICLE | March 23, 2010

Analysis and characterization of contamination in EUV reticles

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Carbon, Thin films, Reticles, Contamination, Spectroscopy, Reflectivity, Raman spectroscopy, Extreme ultraviolet, Chemical analysis, Extreme ultraviolet lithography

A host of complementary imaging techniques (Scanning Electron Microscopy), surface analytical technique (Auger Electron Spectroscopy, AES), chemical analytical and speciation techniques (Grazing Incidence Reflectance Fourier-Transform Infrared Spectroscopy, GIR-FTIR; and Raman spectroscopy) have been assessed for their sensitivity and effectiveness in analyzing contamination on three EUV reticles that were contaminated to varying degrees. The first reticle was contaminated as a result of its exposure experience on the SEMATECH EUV Micro Exposure Tool (MET) at Lawrence Berkeley National Laboratories, where it was exposed to up to 80 hours of EUV radiation. The second reticle was a full-field reticle, specifically designed to monitor molecular contamination, and exposed to greater than 1600J/cm<sup>2</sup> of EUV radiation on the ASML Alpha Demo Tool (ADT) in Albany Nanotech in New York. The third reticle was intentionally contaminated with hydrocarbons in the Microscope for Mask Imaging and Contamination Studies (MIMICS) tool at the College of Nanoscale Sciences of State University of New York at Albany. The EUV reflectivities of some of these reticles were measured on the Advanced Light Source EUV Reflectomer at Lawrence Berkeley National Laboratories and PTB Bessy in Berlin, respectively. Analysis and characterization of thin film contaminants on the two EUV reticles exposed to varying degrees of EUV radiation in both MET and ADT confirm that the two most common contamination types are carbonization and surface oxidation, mostly on the exposed areas of the reticle, and with the MET being significantly more susceptible to carbon contamination than the ADT. While AES in both surface scanning and sputter mode is sensitive and efficient in analyzing thin contaminant films (of a few nanometers), GIRFTIR is sensitive to thick films (of order of a 100 nm or more on non-infra-red reflecting substrates), Raman spectroscopy is not compatible with analyzing such contaminants because of laser-induced evaporation of the contaminant film. SEM and EUV reflectometry are effective in quantifying the impact of contamination on imaging performance and reflectivity, respectively.

PROCEEDINGS ARTICLE | March 23, 2010

EUV lithography at the 22nm technology node

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Lithography, Optical lithography, Metals, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Double patterning technology, Immersion lithography, Optical proximity correction

PROCEEDINGS ARTICLE | March 20, 2010

A study of reticle non-flatness induced image placement error contributions in EUV lithography

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Reticles, Data modeling, Electrodes, Particles, Distortion, Printing, Finite element methods, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

PROCEEDINGS ARTICLE | March 20, 2010

Monitoring reticle molecular contamination in ASML EUV Alpha Demo Tool

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Carbon, Reticles, Contamination, Curium, Silicon, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Tantalum, Semiconducting wafers

PROCEEDINGS ARTICLE | March 20, 2010

Assessing EUV mask defectivity

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Reticles, Optical lithography, Defect detection, Inspection, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Line edge roughness, Semiconducting wafers, Defect inspection

PROCEEDINGS ARTICLE | May 11, 2009

Thorough characterization of an EUV mask

Proc. SPIE. 7379, Photomask and Next-Generation Lithography Mask Technology XVI

KEYWORDS: Mirrors, Reflectivity, Atomic force microscopy, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Line edge roughness, Semiconducting wafers

PROCEEDINGS ARTICLE | April 1, 2009

Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools

Proc. SPIE. 7273, Advances in Resist Materials and Processing Technology XXVI

KEYWORDS: Lithography, Reticles, Data modeling, Diffusion, Diagnostics, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Nanoimprint lithography, Photoresist processing

PROCEEDINGS ARTICLE | March 20, 2009

Characterization of a 0.25NA full-field EUV exposure tool

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Reticles, Metrology, Scanners, Scatterometry, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Overlay metrology, Diffraction gratings

PROCEEDINGS ARTICLE | March 18, 2009

Modeling and experiments of non-telecentric thick mask effects for EUV lithography

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Lithography, Finite-difference time-domain method, Imaging systems, Scanners, Diffusion, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Systems modeling

PROCEEDINGS ARTICLE | March 18, 2009

EUVL reticle defectivity evaluation

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Multilayers, Reticles, Defect detection, Inspection, Scanning electron microscopy, Wafer inspection, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

PROCEEDINGS ARTICLE | March 18, 2009

Exposure tool settings and OPC strategies for EUV lithography at the 16-nm node

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Lithographic illumination, Image processing, Diffusion, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, EUV optics

PROCEEDINGS ARTICLE | March 18, 2009

Flare evaluation of ASML alpha demo tool

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Nanotechnology, Lithography, Diffraction, Mirrors, Reticles, Reflection, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Diffraction gratings

PROCEEDINGS ARTICLE | March 18, 2009

Integration of EUV lithography in the fabrication of 22-nm node devices

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Lithography, Optical lithography, Imaging systems, Etching, Copper, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist processing, Semiconducting wafers

PROCEEDINGS ARTICLE | October 17, 2008

An investigation of EUV lithography defectivity

Proc. SPIE. 7122, Photomask Technology 2008

KEYWORDS: Reticles, Particles, Silicon, Inspection, Scanning electron microscopy, Wafer inspection, Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Defect inspection

PROCEEDINGS ARTICLE | March 28, 2008

Extreme ultraviolet resist outgassing and its effect on nearby optics

Proc. SPIE. 6921, Emerging Lithographic Technologies XII

KEYWORDS: Mirrors, Contamination, Calibration, Spectroscopy, Molecules, Reflectivity, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, EUV optics

PROCEEDINGS ARTICLE | March 26, 2008

The use of EUV lithography to produce demonstration devices

Proc. SPIE. 6921, Emerging Lithographic Technologies XII

KEYWORDS: Etching, Metals, Scanners, Photomasks, Extreme ultraviolet, Transistors, Extreme ultraviolet lithography, Optical proximity correction, Photoresist processing, Semiconducting wafers

PROCEEDINGS ARTICLE | March 20, 2008

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

Proc. SPIE. 6921, Emerging Lithographic Technologies XII

KEYWORDS: Lithography, Optical lithography, Interferometers, Image resolution, Printing, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, High volume manufacturing, Line edge roughness

PROCEEDINGS ARTICLE | March 15, 2007

Initial experience establishing an EUV baseline lithography process for manufacturability assessment

Proc. SPIE. 6517, Emerging Lithographic Technologies XI

KEYWORDS: Lithography, Microscopes, Reticles, Contamination, Manufacturing, Reflectivity, Image resolution, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography

PROCEEDINGS ARTICLE | March 13, 2007

EUV and non-EUV inspection of reticle defect repair sites

Proc. SPIE. 6517, Emerging Lithographic Technologies XI

KEYWORDS: Multilayers, Scattering, Signal attenuation, Ultraviolet radiation, Light scattering, Inspection, Reflectivity, Scanning electron microscopy, Photomasks, Extreme ultraviolet

PROCEEDINGS ARTICLE | October 20, 2006

Multilayer defects nucleated by substrate pits: a comparison of actinic inspection and non-actinic inspection techniques

Proc. SPIE. 6349, Photomask Technology 2006

KEYWORDS: Multilayers, Defect detection, Imaging systems, Coating, Inspection, Reflectivity, Printing, Photomasks, Extreme ultraviolet, Signal detection

PROCEEDINGS ARTICLE | March 23, 2006

EUV testing of multilayer mirrors: critical issues

Proc. SPIE. 6151, Emerging Lithographic Technologies X

KEYWORDS: Carbon, Mirrors, Molecules, Reflectivity, Reflectometry, Extreme ultraviolet, Extreme ultraviolet lithography, Synchrotrons, Carbon monoxide, EUV optics

PROCEEDINGS ARTICLE | March 22, 2006

Demonstration of phase-shift masks for extreme-ultraviolet lithography

Proc. SPIE. 6151, Emerging Lithographic Technologies X

KEYWORDS: Lithography, Multilayers, Metrology, Etching, Reflectivity, Scanning electron microscopy, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography

PROCEEDINGS ARTICLE | May 6, 2005

A dual-mode actinic EUV mask inspection tool

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Microscopes, Multilayers, Imaging systems, Inspection, Photomasks, Extreme ultraviolet, Zone plates, Semiconducting wafers, EUV optics, Defect inspection

PROCEEDINGS ARTICLE | May 6, 2005

UIUC collector erosion and optical lifetime project results: time dependent exposures

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Mirrors, Electrodes, Ions, Reflectivity, Photodiodes, Atomic force microscopy, Scanning electron microscopy, Xenon, Extreme ultraviolet, Extreme ultraviolet lithography

PROCEEDINGS ARTICLE | May 6, 2005

Investigation of plasma-induced erosion of multilayer condenser optics

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Gold, Carbon, Sputter deposition, Ions, Silicon, Xenon, Silicon carbide, Molybdenum, Pulsed laser operation, Plasma

PROCEEDINGS ARTICLE | May 6, 2005

The effect of debris on collector optics, its mitigation and repair: next-step a gaseous Sn EUV DPP source

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Gold, Mirrors, Etching, Metals, Ions, Extreme ultraviolet, Molybdenum, EUV optics, Plasma, Tin

The critical issue related to advanced fuel plasma EUV sources is collector lifetime. The Illinois Debris-mitigation EUV Applications Laboratory (IDEAL) is continuing research with a dense plasma focus (DPF) light source. The IDEAL DPF electrodes have been redesigned in order to allow for advanced fuel testing, better pinch operation and increased debris generation. The DPF light source operates at negative polarity, 50 Hz, 3 kV and 7.5 Joules of energy per pulse with tetramethyltin [(CH3)4Sn] as an advanced fuel source. EUV output power is measured with filtered photodiodes and results from a gridded energy analyzer still show two primary ion components with a high-energy peak near 6keV. A Faraday-shielded immersed RF antenna provides a 2kW secondary discharge near the DPF for both pre-ionization and mitigation of the debris with a foil trap (>90%). In addition the Surface Cleaning of Optics by Plasma Exposure (SCOPE) facility has been constructed where evaporated and/or ion implanted metals can be deposited on and removed from EUV mirrors. In SCOPE metals were evaporated on to mirror samples held at various temperatures. A metal ion beam was also added to simulate the energetic erosive flux and a helicon plasma was used in situ to study plasma cleaning. Reactive ion etching of tin by chlorine and other gases has shown 500:1 selectivity factors and very high etch rates suitable to refresh an optical mirror surface within a few seconds. Mirror samples were analyzed at the Center for Microanalysis of Material where the diffusion and transport of the metals and surface roughness were studied for lifetime estimation. Lastly, the Xtreme Characterization EUV Experiment Device (XCEED) was used for characterization of the debris has been accomplished by use of an energy sector analyzer in combination with ion time-of-flight. This diagnostic has been designed to measure velocity, mass and charge states of the incoming ions and neutrals, giving discrete debris spectra while in negative polarity operation. Latest results will be presented based on this work.

PROCEEDINGS ARTICLE | May 6, 2005

XCEED: XTREME commercial EUV exposure diagnostic experiment

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Mirrors, Iron, Sensors, Ions, Reflectivity, Diagnostics, Photodiodes, Xenon, Extreme ultraviolet, Plasma

PROCEEDINGS ARTICLE | May 6, 2005

Two-wave pattern shift aberration monitor for centrally obscured optical systems

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Wafer-level optics, Lithographic illumination, Spatial frequencies, Interferometry, Wavefronts, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, EUV optics

PROCEEDINGS ARTICLE | May 6, 2005

Characterization of collector optic material samples before and after exposure in LPP and DPP EUV sources

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Gold, Crystals, Ions, Silicon, Atomic force microscopy, Xenon, Palladium, Extreme ultraviolet lithography, Molybdenum, Ruthenium

The University of Illinois at Urbana-Champaign (UIUC) and several national laboratories are collaborating on an SEMATECH effort to characterize xenon plasma exposure effects on EUV condenser optics. A series of mirror samples provided by SEMATECH were exposed for 10M shots in an Xtreme Technologies XTS 13-35 commercial EUV discharge plasma source at UIUC and 5M at the high-power TRW laser plasma source at Sandia National Laboratories. Results for both pre and post-exposure material characterization are presented, for samples exposed in both facilities. Surface analysis performed by the Center for Microanalysis of Materials at UIUC investigates mirror degradation mechanisms by measuring changes in surface roughness, texture, and grain sizes as well as analysis of implantation of energetic Xe ions, Xe diffusion, and mixing of multilayers. Materials characterization on samples removed after varying exposure times in the XTS source, together with in-situ EUV reflectivity measurements, identify the onset of different degradation mechanisms within each sample over 1M-100M shots. Results for DPP-exposed samples for 10 million shots in our XCEED (Xtreme Commercial EUV Exposure Device) experiment showed, in general, that samples were eroded and the surfaces were roughened with little change to the texture. AFM results showed an increase in roughness by a factor of 2-5 times, with two exceptions. This was confirmed by x-ray reflectivity (XRR) data, which showed similar roughening characteristics and also confirmed the smoothening of two samples. SEM pictures showed that erosion was from 4-47 nm, depending on the sample material and angle of incidence for debris ions. Finally, microanalysis of the exposed samples indicated that electrode material was implanted at varying depths in the samples. The erosion mechanism is explored using a spherical sector energy analyzer (ESA) to measure ion species and their energy spectra. Energy spectra for ions derived from various chamber sources are measured as a function of the Argon flow rate and angle from the centerline of the pinch. Results show creation of high energy ions (up to E = 13 keV). Species noted include ions of Xe, the buffer gas, and various electrode materials. The bulk of fast ion ejection from the pinch includes Xe<sup>+</sup> which maximizes at ~8 keV followed by Xe<sup>2+</sup> which maximizes at ~5 keV. Data from samples analysis and ESA measurements combined indicate mechanism and effect for debris-optic interactions and detail the effectiveness of the current debris mitigation schemes.

PROCEEDINGS ARTICLE | May 6, 2005

Actinic inspection of multilayer defects on EUV masks

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Visible radiation, Defect detection, Scattering, Light scattering, Inspection, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Signal detection, Defect inspection

PROCEEDINGS ARTICLE | May 20, 2004

Scaling studies of capping layer oxidation by water exposure with EUV radiation and electrons

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Oxides, Mirrors, Electrons, Silicon, Reflectivity, Oxygen, Extreme ultraviolet, Extreme ultraviolet lithography, EUV optics, Oxidation

PROCEEDINGS ARTICLE | May 20, 2004

Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Reflectors, Multilayers, Reticles, Optical lithography, Printing, Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Binary data

PROCEEDINGS ARTICLE | May 20, 2004

The erosion of materials exposed to a laser-pulsed-plasma (LPP) extreme ultraviolet (EUV) illumination source

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Gold, Sputter deposition, Particles, Ions, Silicon, Xenon, Extreme ultraviolet, Extreme ultraviolet lithography, Molybdenum, Plasma

PROCEEDINGS ARTICLE | June 16, 2003

Reduction of image placement errors in EPL masks

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Lithography, Electron beam lithography, Reticles, Metrology, Silicon, Photomasks, Mask making, Optical alignment, Semiconducting wafers, Projection lithography

PROCEEDINGS ARTICLE | May 28, 2003

Ultrathin-membrane EPL masks

Proc. SPIE. 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents

KEYWORDS: Carbon, Lithography, Mechanics, Silicon, Manufacturing, Scanning electron microscopy, Microelectronics, Photomasks, Silicon carbide, Photomicroscopy

SPIE Journal Paper | April 1, 2003

Predicting overlay performance for electron projection lithography masks

Phillip Reu, Cheng-Fu Chen, Roxann Engelstad, Edward Lovell, Michael Lercel, Obert Wood, R. Mackay

JM3 Vol. 2 Issue 02

KEYWORDS: Photomasks, Mask making, Manufacturing, Electron beam lithography, Performance modeling, Projection lithography, Finite element methods, 3D modeling, Device simulation, Semiconducting wafers

PROCEEDINGS ARTICLE | July 1, 2002

Predicting overlay performance for electron projection lithography masks

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Electron beam lithography, Etching, Silicon, Manufacturing, Control systems, Finite element methods, Photomasks, Mask making, Semiconducting wafers, Projection lithography

PROCEEDINGS ARTICLE | July 1, 2002

Complete system of nanoimprint lithography for IC production

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Actuators, Lithography, Polymers, Ultraviolet radiation, Silicon, Inspection, Photomasks, Optical alignment, Semiconducting wafers, Binary data

PROCEEDINGS ARTICLE | September 14, 2001

Printing high-density patterns with dark-field 193-nm lithography

Proc. SPIE. 4346, Optical Microlithography XIV

KEYWORDS: Lithography, Reticles, Lithographic illumination, Scanning electron microscopy, Printing, Projection systems, Photomasks, Transistors, Photomicroscopy, Resolution enhancement technologies

PROCEEDINGS ARTICLE | July 5, 2000

Phase-mask effects by dark-field lithography

Proc. SPIE. 4000, Optical Microlithography XIII

KEYWORDS: Lithography, Reticles, Scanning electron microscopy, Projection systems, Photomasks, Photomicroscopy, Semiconducting wafers, Resolution enhancement technologies, Phase shifts, Diffraction gratings

PROCEEDINGS ARTICLE | June 25, 1999

Development of a technique for rapid at-wavelength inspection of EUV mask blanks

Proc. SPIE. 3676, Emerging Lithographic Technologies III

KEYWORDS: Multilayers, Contamination, Inspection, Reflectivity, Photoresist materials, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Floods

PROCEEDINGS ARTICLE | December 18, 1998

Rapid at-wavelength inspection of EUV mask blanks by photoresist transfer

Proc. SPIE. 3546, 18th Annual BACUS Symposium on Photomask Technology and Management

KEYWORDS: Multilayers, Inspection, Reflectivity, Optical inspection, Photoresist materials, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist developing, Floods

PROCEEDINGS ARTICLE | November 1, 1997

Interferometric testing of EUV lithography cameras

Proc. SPIE. 3152, Materials, Manufacturing, and Measurement for Synchrotron Radiation Mirrors

KEYWORDS: Mirrors, Multilayers, Interferometers, Cameras, Interferometry, Wavefronts, Phase interferometry, Extreme ultraviolet, Charge-coupled devices, Extreme ultraviolet lithography

PROCEEDINGS ARTICLE | May 27, 1996

Characterization of the alignment system on a laboratory extreme ltraviolet lithography tool

Proc. SPIE. 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI

KEYWORDS: Mirrors, Moire patterns, Imaging systems, Cameras, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical alignment, Semiconducting wafers, Plasma

PROCEEDINGS ARTICLE | May 19, 1995

Recent results in the development of an integrated EUVL laboratory tool

Proc. SPIE. 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V

KEYWORDS: Lithography, Mirrors, Imaging systems, Cameras, Reflectivity, Aspheric lenses, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

PROCEEDINGS ARTICLE | May 19, 1995

Extreme UV resist technology: the limits of silylated resist resolution

Proc. SPIE. 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V

KEYWORDS: Carbon dioxide, Deep ultraviolet, Etching, Silicon, Gases, Oxygen, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Plasma

Silylated, dry-developed resists have demonstrated superior resolution, beyond that of their solution-developed resist counterparts. However, the implementation of plasma-developed resists in the manufacture of integrated circuit devices has not reached volume fabrication despite the fact that silylated resists minimize various imaging pitfalls including thickness variations over topography, limited depth of focus, thickness or swing curve effects and reflection4nduced exposure variations. This is exemplified with deep-UV lithography at 248 nm in which silylated resists have printed 200 urn features with a 0.53 NA exposure tool. Plans for implementing silylation technology are not imminent because of the conviction that solution-developed resists will meet the specifications for 250 urn design rule devices. Yet, will actual yields using solution-developed resists be adequate, will the processing and materials costs be acceptible and will the processes be extendable to much smaller features (0.2 pm) with or without optical tricks? For silylated resists, on the other hand, the issues are the availability of production worthy equipment, the complex nature of the processing, yields which may be adversely affected by particles produced during the plasma development process, process latitude, sensitivity and cost. For extreme UV lithography (EUVL) the silylated resist issues are somewhat different. This paper examines various aspects of silylated, plasma-developed resists to determine if they have the potential of resolving 100 nm features in thick (700 nm) resist films needed for device fabrication. The starting point is DUV performance. We have used a bi!ayer resist comprised of Shipley XP-8844 n hard-baked Shipley MP-1807 to resolve 200 nm lines and spaces (l/s) in 800 nm thickness films using 72 mJ/cm doses of 248 nm light, imaging at a Rayleigh k1 value of 0.43. It has been achieved because of advanced, Si-rich silylating reagents, control of plasma development conditions in a helicon-source etcher, control of thermal processing to minimize acid catalyst migration in the chemically amplified resist and control of flow during silylation. Applying the above k1 value to imaging at 13.5 nm with (NA) 0.08 predicts a 1/s resolution of 73 nm for EUVL. In practice this can't be achieved yet, but we report here on new developments in plasma etching and silylated resist flow control that are helping to reach this goal. Certain processing phenomena may limit resolution. In the imaging layer, migration of acid catalyst during and after exposure may blur the image. During and after silylation, swelling and flow may enlarge certain regions nonspecifically. Another factor is anisotropic etching of the planarizing layer such that no undercut of the masking layer occurs even upon * Present address: Dept. of Chemical Engineering, Mass. Inst. of Technology, Cambridge, MA 02139 ** Present address: Lawrence Livermore National Laboratory, P0 Box 808, Livermore, CA 94550 overetching. A final factor is absorption, which for EUVL, is almost independent of the resist, but is sensitive to wavelength. At 13 .5 nm the absorbance is so high that only surface imaging resist schemes are likely to give high resolution imaging in thick (0.70 pm) features. This paper provides an overview of developments in each of these areas that may limit silylated resist technology. Methods are described that minimize silylated resist flow, uniformly and reproducibly remove Si surface residue from exposed areas and reduce undercut during plasma developmentand overetch. Usin these methods we were able to obtain the first thick film images of sub 200 nm 1/s at reasonable EUV doses of 24 mJ/cm . The incremental understanding that has contributed to these results is discussed. Keywords: lithography, EUV, resists, silylated, plasma develop

PROCEEDINGS ARTICLE | May 16, 1994

Soft x-ray pulse-length measurement by pump-probe absorption spectroscopy

Proc. SPIE. 2116, Generation, Amplification, and Measurement of Ultrashort Laser Pulses

KEYWORDS: X-rays, X-ray diffraction, Ions, Reflectivity, Ionization, Absorption spectroscopy, Krypton, Pulsed laser operation, Plasma, Absorption

PROCEEDINGS ARTICLE | May 13, 1994

Development of a laboratory extreme-ultraviolet lithography tool

Proc. SPIE. 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV

KEYWORDS: Mirrors, Multilayers, Imaging systems, Cameras, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical alignment, Semiconducting wafers, Plasma

PROCEEDINGS ARTICLE | February 1, 1994

Application of laser plasma sources in soft x-ray projection lithography

Proc. SPIE. 2015, Applications of Laser Plasma Radiation

KEYWORDS: Mirrors, Multilayers, Imaging systems, X-rays, Xenon, Solids, Objectives, Photomasks, Projection lithography, Plasma

PROCEEDINGS ARTICLE | July 8, 1993

Soft x-ray pulse length measurement by pump-probe absorption spectroscopy

Proc. SPIE. 1860, Short-Pulse High-Intensity Lasers and Applications II

KEYWORDS: X-rays, X-ray diffraction, Ions, Reflectivity, Ionization, Absorption spectroscopy, Krypton, Pulsed laser operation, Plasma, Absorption

PROCEEDINGS ARTICLE | June 24, 1993

Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization

Proc. SPIE. 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III

KEYWORDS: Oxides, Polymethylmethacrylate, Metals, Image processing, X-rays, Silicon, Electroluminescence, Semiconducting wafers, X-ray lithography, Halogens

PROCEEDINGS ARTICLE | January 1, 1992

Comparison of reflective mask technologies for soft x-ray projection lithography

Proc. SPIE. 1604, 11th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Gold, Multilayers, Polymethylmethacrylate, Etching, X-rays, Germanium, Ions, Reflectivity, Photomasks, Reactive ion etching

PROCEEDINGS ARTICLE | February 1, 1991

Soft x-ray projection lithography: experiments and practical printers

Proc. SPIE. 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography

KEYWORDS: Lithography, Mirrors, Multilayers, X-ray optics, Cameras, X-rays, Reflectivity, Photomasks, Semiconducting wafers, X-ray lithography

PROCEEDINGS ARTICLE | May 1, 1990

20:1 projection soft x-ray lithography using trilevel resist

Proc. SPIE. 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX

KEYWORDS: Diffraction, Mirrors, Imaging systems, X-rays, Silicon, Reflectivity, Objectives, Photomasks, X-ray lithography, X-ray technology

Showing 5 of 98 publications

Conference Committee Involvement (10)

Extreme Ultraviolet (EUV) Lithography X

25 February 2019 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VIII

27 February 2017 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VII

22 February 2016 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VI

23 February 2015 | San Jose, California, United States

Showing 5 of 10 published special sections

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