Dr. Oleg V. Sulima Profile

Dr. Oleg V. Sulima

Senior scientist at

SPIE Involvement:

Publications (20)

SPIE Conference Volume | December 11, 2017

Next Generation Technologies for Solar Energy Conversion VIII

SPIE Conference Volume | December 13, 2016

Next Generation Technologies for Solar Energy Conversion VII

SPIE Conference Volume | October 27, 2015

Next Generation Technologies for Solar Energy Conversion VI

SPIE Conference Volume | October 23, 2014

Next Generation Technologies for Solar Energy Conversion V

SPIE Conference Volume | September 30, 2013

Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV

SPIE Journal Paper | July 1, 2007

Strong broadband optical absorption in silicon nanowire films

Tsakalakos, Loucas , Balch, Joleyn , Fronheiser, Jody , Shih, Min-Yi , LeBoeuf, Stephen , Pietrzykowski, Matthew , Codella, Peter , Korevaar, Bas , Sulima, Oleg , Rand, James , Davuluru, Anilkumar , Rapol, Umakant

JNP Vol. 1 Issue 01

KEYWORDS: Silicon, Absorption, Silicon films, Reflectivity, Solids, Glasses, Thin films, Chemical vapor deposition, Optical properties, Nanowires

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PROCEEDINGS ARTICLE | September 7, 2006

InGaAsSb/AlGaAsSb heterojunction phototransistors for infrared applications

Proc. SPIE. 6295, Infrared Detectors and Focal Plane Arrays VIII

KEYWORDS: Infrared detectors, Signal to noise ratio, Infrared sensors, Indium gallium arsenide, Sensors, Quantum efficiency, Infrared radiation, Signal detection, Heterojunctions, Phototransistors

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PROCEEDINGS ARTICLE | May 18, 2006

Room-temperature AlGaAsSb/InGaAsSb heterojunction phototransistors

Proc. SPIE. 6232, Intelligent Integrated Microsystems

KEYWORDS: Liquid phase epitaxy, Diffractive optical elements, Glasses, Crystals, Doping, Gallium antimonide, Metalorganic chemical vapor deposition, Heterojunctions, Phototransistors, Indium gallium arsenide antimonide

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SPIE Journal Paper | September 1, 2005

Integrated micro-optical multichip module based on an uncooled InGaAsSb/AlGaAsSb photodetector

Lohokare, Saurabh , Sulima, Oleg , Dillon, Thomas , Prather, Dennis

OE Vol. 44 Issue 09

KEYWORDS: Sensors, Diffractive optical elements, Indium gallium arsenide antimonide, Photodetectors, Glasses, Adhesives, Prototyping, Photoresist materials, Optical engineering, Avalanche photodetectors

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PROCEEDINGS ARTICLE | August 19, 2005

III-V compound detectors for CO2 DIAL measurements

Proc. SPIE. 5887, Lidar Remote Sensing for Environmental Monitoring VI

KEYWORDS: Signal to noise ratio, Indium gallium arsenide, Sensors, Quantum efficiency, Capacitance, Carbon monoxide, Signal detection, Atmospheric sensing, Phototransistors, Atmospheric monitoring

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SPIE Journal Paper | July 1, 2004

AlGaAsSb/InGaAsSb phototransistors for 2-μm remote sensing applications

Refaat, Tamer , Abedin, M. Nurul , Sulima, Oleg , Ismail, Syed , Singh, Upendra

OE Vol. 43 Issue 07

KEYWORDS: Sensors, Phototransistors, Indium gallium arsenide, Mercury cadmium telluride, Indium gallium arsenide antimonide, LIDAR, Absorption, Quantum efficiency, Remote sensing, Atmospheric sensing

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PROCEEDINGS ARTICLE | July 1, 2004

Integrated micro-optical multichip module based on uncooled InGaAsSb/AlGaAsSb detector for noninvasive glucose monitoring using NIR absorption spectroscopy

Proc. SPIE. 5321, Biomedical Vibrational Spectroscopy and Biohazard Detection Technologies

KEYWORDS: Avalanche photodetectors, Glucose, Diffractive optical elements, Polymers, Diffusion, Zinc, Aluminum, Antimony, Gallium, Indium gallium arsenide antimonide

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PROCEEDINGS ARTICLE | June 8, 2004

Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects

Proc. SPIE. 5353, Semiconductor Photodetectors

KEYWORDS: Photodetectors, Optical lithography, Sensors, Etching, Polymers, Photodiodes, Gallium antimonide, Photoresist materials, Photomasks, Plasma etching

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PROCEEDINGS ARTICLE | October 10, 2003

Characterization and analysis of InGaAsSb detectors

Proc. SPIE. 5074, Infrared Technology and Applications XXIX

KEYWORDS: Avalanche photodetectors, LIDAR, Sensors, Doping, Ionization, Carbon monoxide, Signal detection, Indium gallium arsenide antimonide, Temperature metrology, Absorption

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SPIE Journal Paper | October 1, 2003

High fill-factor avalanche photodetectors for near-infrared free-space photonic networks

Lohokare, Saurabh , Prather, Dennis , Dillon, Thomas , Sure, Anita , Sulima, Oleg , Cox, Jeffery , Mauk, Michael

JM3 Vol. 2 Issue 04

KEYWORDS: Avalanche photodetectors, Gallium, Antimony, Diffractive optical elements, Polymers, Aluminum, Zinc, Diffusion, Indium gallium arsenide antimonide, Resistance

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PROCEEDINGS ARTICLE | September 18, 2003

AlGaAs photovoltaic arrays spectrally matched to photoluminescent fibers for UGS application

Proc. SPIE. 5090, Unattended Ground Sensor Technologies and Applications V

KEYWORDS: Semiconductors, Optical fibers, Photovoltaics, Solar cells, Gallium arsenide, Photodiodes, Aluminum, Gallium, Unattended ground sensors, Absorption

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SPIE Journal Paper | September 1, 2003

Integrated optoelectronic transmitter and receiver multi-chip modules for three-dimensional chip-level micro-optical interconnects

Lohokare, Saurabh , Prather, Dennis , Cox, Jeffery , Sims, Paul , Mauk, Michael , Sulima, Oleg

OE Vol. 42 Issue 09

KEYWORDS: Transmitters, Diffractive optical elements, Receivers, Optoelectronics, Vertical cavity surface emitting lasers, Gallium arsenide, System integration, Optical interconnects, Sensors, Very large scale integration

PROCEEDINGS ARTICLE | May 30, 2003

Integrated 3D micro-optical interconnection system

Proc. SPIE. 4997, Photonics Packaging and Integration III

KEYWORDS: Transmitters, Photodetectors, Diffractive optical elements, Sensors, Glasses, Gallium arsenide, Receivers, Vertical cavity surface emitting lasers, Optical interconnects, System integration

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PROCEEDINGS ARTICLE | August 14, 2002

Small power systems for law enforcement applications

Proc. SPIE. 4708, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Defense and Law Enforcement

KEYWORDS: Semiconductors, Optical fibers, Photovoltaics, Solar energy, Sensors, Solar cells, Gallium arsenide, Diodes, Thermoelectric materials, Unattended ground sensors

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Recent events have increased interest in the use of sensors by law enforcement and homeland defense related organizations. Autonomous sensors such as those under development for the Unattended Ground Sensor (UGS) program are suitable for some of these applications. The operational lifetime of a UGS depends on the power consumption of the package and the space allocated for batteries. We survey and assess options for powering these devices ina long-term scenario. These alternatives are in various stages of development, and range from conventional batteries and solar cells that are ready for deployment and are now commercially available; to technologies developed for other applications (e.g., power for deep-space probes, man portable power for soldiers, or for sensors in oil drilling bore holes) that would need to be adapted to UGS's; to new and often speculative concepts that are in the laboratory or are still on the drawing board. Ideally, unattended ground sensors do not require servicing, re- energizing or refueling; and are capable of autonomous operation for weeks or even years. Further, UGS's may need to be used covertly, which restricts schemes that would provide a detectable signature. Reliability, ruggedness, cost, weight, size, camouflaging, use of toxic materials and other safety or disposal aspects, restrictions on their deployment (e.g., whether UGS's can be dropped form the air or whether they need to be uprighted or favorably oriented), storage and inventorying considerations, temperature ranges of operation, and complexity of associated electronics are also important issues. In this paper, we will limit the discussion to systems where operating power does not exceed 5 watts since larger systems are commercially available. Some subjectivity in comparisons is perhaps inevitable, but despite the disparate physics upon which these devices are based, a few common criteria can be invoked for discussing their suitability for energy storage and powering UGS's. Metrics can be developed to assess and compare options, but since most of the options are in very different stages of development, one is sometimes forced to use performance specifications that are predicted, rather than demonstrated. Thus, in some cases the comparisons are tentative or speculative.

PROCEEDINGS ARTICLE | August 7, 2002

High-performance monolithic AlGaAs/GaAs photovoltaic arrays coupled to scintillating fibers for UGS application

Proc. SPIE. 4743, Unattended Ground Sensor Technologies and Applications IV

KEYWORDS: Semiconductors, Optical fibers, Photovoltaics, Liquid phase epitaxy, Solar cells, Germanium, Gallium arsenide, Zinc, Semiconducting wafers, Unattended ground sensors

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