The aim of this work is to illustrate features of computation for MQW strained semiconductor lasers based on type-I and II heterostructures. The theoretical results founded on the given distinctions allowed to investigate the threshold current temperature dependence and research the behavior of all its components for InGaAsSb/AlGaAsSb and InGaAsSb/GaSb heterolasers which we have chosen as examples of type-I and II heterostructures respectively. The obtained data and additionally carried out computations assure that further threshold current optimization will result in its lowering.
The temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) has been determined. Processes of non-radiative Auger recombination which occur in the active region of the quantum-well lasers have been included into consideration. The analytical approach for the evaluation of the characteristic temperature of the lasing threshold is presented. For described asymmetric quantum-well heterostructure lasers, it is shown that the influence of Auger recombination processes on the temperature behavior of the lasing threshold is not essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed 80 cm-1.