Molecular redox dopants are tested concerning their application to organic thin-film transistors (OTFT). Here we report
on the feasibility of solution processing of molecular-doped transport layers, showing high air-stability of solutions and
layers. We apply capacitance spectroscopy to investigate the interface of intrinsic and electrically doped layers. We also
show that there is virtually no dopant migration in real devices, even when high electric fields up to 300 kV/cm<sup>2</sup> are
applied for 1000 h. We report on p- and n-type on OTFTs with silver contacts. The application of injection layers based
on redox dopants improves the measured field-effect mobility by about 2 orders of magnitude.