(Pb,La)(Zr,Ti)O<sub>3</sub> (PLZT) thin films were grown epitaxially on MgO(001) substrate by radio frequency magnetron
sputtering. Different ridge-type waveguides, including a Mach-Zehnder interferometer with co-planar metal electrodes,
were defined in the PLZT epilayer using standard photolithographic techniques. The propagation losses for transverse
electric polarized infrared light (λ<sub>0</sub> = 1550 nm) in these ridge-type channel waveguides were measured at ~10 dB/cm.
Electro-optic modulation was demonstrated with a half-wave voltage V<sub>π</sub> ≈ 150 V for a 3 mm interaction length,
corresponding to a Pockels coefficient <i>r</i><sub>51</sub> ≈ 8.3 pm/V. Photonic crystal slabs (PCSs) were defined by etching a
hexagonal two-dimensional lattice of holes in prepatterned ridge-type waveguides, using a focused ion beam. The
sidewalls of the etched holes were inclined by an angle of ~10°. The impact on the transmission properties of these PCSs
caused by out-of-plane structural asymmetries, such as deviation from a cylindrical shape of the FIB-etched air holes and
the presence of a substrate with refractive index different from that of air, was investigated by numerical simulation.
Auger depth profiling was used to investigate Ga<sup>+</sup> ion implantation into the PLZT epilayer during FIB processing. The
measurements suggest that such implantation of Ga<sup>+</sup> is confined to the uppermost ~50 nm of the sample surface.
Nonlinear optical conversion of 500 mJ pulses from a Nd:YAG laser to the mid-infrared is demonstrated in a two-step architecture. Using a type 2 phase matched KTiOPO<sub>4</sub>-based master-oscillator/power-amplifier (MOPA) architecture for conversion to 2 μm, 140 mJ signal at 2.08 μm with M<sup>2</sup> = 2.3 and 80 mJ idler at 2.18 μm were obtained. Using 58 mJ of the signal beam to pump a ZnGeP<sub>2</sub>-based MOPA, we have obtained 21 mJ in the 3-5 μm range with M<sup>2</sup> ≈ 15.