High bandwidth density silicon photonic interconnects offer the potential to address the massive increase in bandwidth demands for data center traffic and high performance computing. One of the major challenges in realizing silicon photonics transceivers is the integration and packing of photonic ICs (PIC) with electronic ICs (EIC). This paper presents our version one, 2.5D integrated multi-chip module (MCM) transceiver for 4 channel wavelength division multiplexing (WDM) operation, targeting 10 Gbps per channel. We identify five key areas critical to successful integration of MCM transceivers, which we have used in developing our version two MCM transceiver: integration architecture, equivalent circuit model development, PIC to EIC interface modelling, MCM I/O design, and design for assembly.
A swept source optical coherence tomography (SS-OCT) system with the interferometer engine being a photonic integrated circuit (PIC) has been developed. Furthermore, an Arrayed Waveguide Grating (AWG), representing a grating on a PIC, for spectral domain OCT (SD-OCT) has been integrated in a fiber-based OCT system. With measured sensitivities of ~87 dB (SS-OCT) and ~80 dB (SD-OCT), scattering tissue imaging becomes feasible for OCT-on-chip systems. In this study, we present two OCT-on-chip systems and first results of biological tissue imaging in-vivo and exvivo.
The challenges associated with the photonic packaging of silicon devices is often underestimated and remains technically challenging. In this paper, we review some key enabling technologies that will allow us to overcome the current bottleneck in silicon photonic packaging; while also describing the recent developments in standardisation, including the establishment of PIXAPP as the worlds first open-access PIC packaging and assembly Pilot Line. These developments will allow the community to move from low volume prototype photonic packaged devices to large scale volume manufacturing, where the full commercialisation of PIC technology can be realised.
In this paper, we present a novel 1x2 multi-mode-interferometer-Fabry-Perot (MMI-FP) laser diode, which demonstrated tunable single frequency operation with more than 30dB side mode suppression ratio (SMSR) and a tuning range of 25nm in the C and L bands, as well as a 750 kHz linewidth. These lasers do not require material regrowth and high resolution gratings; resulting in a simpler process that can significantly increase the yield and reduce the cost.
To compensate for velocity mismatch in travelling wave opto-electronic devices, the microwave velocity of the propagating RF signal is reduced by introducing capacitively loaded elements. For high speed operation, these elements must be electrically isolated from one another, which is typically achieved by using ion-implantation to render the p-doped material non-conducting. We propose and demonstrate through optical and electrical simulations that ion-implantation can be avoided by using a quasi-shallow etch to electrically isolate the capacitive elements. High isolation can be achieved using such an etch without introducing additional losses to the propagating optical signal.
In this paper, we demonstrate a novel InGaAlAs/InGaAlAs quantum well multimode-interferometer-Fabry-Perot laser
diode (MMI-FP LD) in which a 1x3 multimode interferometer is inserted into the conventional FP laser waveguide to
generate single wavelength emission. The designed and fabricated laser diode shows a single longitudinal mode lasing
with side mode suppression ratio (SMSR) of 25dBm at a wavelength of 1567nm with driving current of 170mA and can
be tuned over a certain range by adjusting the driving current. A laser diode incorporating a 1x3 MMI and three single
mode waveguide outputs is also proposed which could be potentially used to generate a 3-channel single longitudinal
mode coherent source using injection locking. The simple structure of this single longitudinal mode laser significantly
eases the fabrication processing enabling an increase in the yield and a reduction in the cost compared with the
traditional single mode lasers.
In this paper, a single facet slotted Fabry-Perot (FP) laser is demonstrated to provide tunable, single mode operation and
has been monolithically integrated into a photonic integrated circuit (PIC) with semiconductor optical amplifiers and a
multimode interference coupler. These lasers are designed by incorporating slots into the ridge of traditional FP cavity
lasers to achieve single mode output, integrability and tunability. With the feature size of the slots around 1μm, standard
photolithographic techniques can be used in the fabrication of the devices. This provides a time and cost advantage in
comparison to ebeam or holographic lithography as used for defining gratings in distributed feedback (DFB) or
distrusted Bragg reflector (DBR) lasers, which are typically used in PICs. The competitive integrable single mode laser
also enables the PIC to be fabricated using only one epitaxial growth and one etch process as is done with standard FP
lasers. This process simplicity can reduce the cost and increase the yield.