Un-cooled single mode operation of 1310 nm and 1490 nm DFB (distributed feedback) lasers across a wide temperature span of 180 °C and 170 °C has been demonstrated. The lasers showed excellent performances such as high output power and high modulation bandwidth as well. This makes them ideal candidates for G-PON (Giga bit rate passive optical network) application as key components for ONU (optical network unit) and OLT (optical line terminal).
The recent development of semiconductor laser technologies for
cost-effective telecom/datacom applications is reviewed
in details in this paper. This includes the laser design, laser chip technology, laser packaging technology and other low
cost lasers (chip + packaging). Some design and simulation examples in Archcom laser production are described first. A
latest trend in the wafer scale testing/characterization/screening technology for low cost semiconductor laser mass
production is discussed then. An advanced long wavelength high power single mode surface emitting laser with wafer
scale characterization using our unique mask free focused ion beam (FIB) etching technology is also demonstrated.
Detailed descriptions on our wide temperature range (-50 °C to +105 °C) G-PON distributed feedback (DFB)
semiconductor lasers with high performance and low cost wafer design are included. Cost reduction innovations in laser
package with our beam profile improved laser and optical feedback insensitive (OFBI) laser are also addressed.