This paper describes an instrument and method for high-resolution characterization of lens components and assemblies for DUV retardance performance at various stages of manufacture. The instrument is a bespoke rotating analyzer Stokes polarimeter designed for DUV wavelengths (e.g. 193 nm, 213 nm, 266 nm, etc.). Using a laser source, the polarimeter delivers a small diameter beam with a characterized polarization state to the optical lens element or objective assembly at the “as-used” design angles of incidence (AOI) to characterize the retardance through the lens or objective at an arbitrary location. The polarization characteristics are usually described by the retardance at specific locations on a component or sub-assembly that can be used to characterize components during development and manufacturing or optimize performance of an assembly.
Adhesive mounting of lenses can allow flexible position control of each optical element, low stress, low part count, and precise alignment of lens assemblies in addition to high durability with respect to thermal expansion, shock, and vibration. Historic implementations of this method carried risk of UV degradation, photo contamination, long term stability, and long assembly cycle times. Others have developed non-adhesive friction/contact approaches to mount lenses but with significant compromises in durability and product cost. These two methods are compared and an optimal approach to achieve high lens mounting durability, low cycle time and negligible photo-contamination is demonstrated. Durability of this adhesive mounting solution will be established with examples including shock and vibration, mechanical stress decoupling factors, and optical stability over a wide range of shipping temperatures.
Corning has developed a number of manufacturing and test techniques to meet the challenging requirements of imaging hyperspectral optical systems. These processes have been developed for applications in the short-wave visible through long-wave IR wavelengths. Optical designs for these imaging systems are typically Offner or Dyson configurations, where the critical optical components are powered gratings and slits. Precision alignment, system athermalization, and harsh environmental requirements, for these systems drive system level performance and production viability.
This paper will present the results of these techniques including all aluminum gratings and slits, innovative grating profiles, snap together self-aligning mechanical designs, and visible test techniques for IR systems.
Corning has developed a number of manufacturing and test techniques to meet the challenging requirements of imaging hyperspectral optical systems. These processes have been developed for applications in the short-wave visible through long-wave IR wavelengths. Optical designs for these imaging systems are typically Offner or Dyson configurations, where the critical optical components are powered gratings and slits. Precision alignment, system athermalization, and harsh environmental requirements, for these systems drive system level performance and production viability.
This paper will present the results of these techniques including all aluminum gratings and slits, innovative grating profiles, snap together self-aligning mechanical designs, and visible test techniques for IR systems.
The production of integrated circuits with ever-smaller feature sizes has historically driven the shift to shorter wavelength radiation sources and increases in numerical aperture (the product of the sine of the imaging cone angle and the refractive index of the media at the image plane). When a next-generation design rule demanded a numerical aperture larger than was technically feasible, a move to a shorter wavelength was the only available solution. Immersion imaging is a detour along the path of shorter wavelengths. Here, the resolution improvement is achieved by exceeding the numerical aperture barrier of 1.0 (for optical systems that form an image in air) by placing a liquid between the final element and the image plane. This liquid layer presents numerous challenges to the optical metrologist. Results of testing a 193nm small-field immersion objective will be reported. The immersion fluid for this objective is de-ionized water. The characterization of the optical and physical properties of the water layer and the effect of those properties on the metrology of the objective will be discussed.
Significant improvement in 157nm optical components lifetime is required for successful implementation of pilot and production scale 157nm lithography. To date, most of the 157nm optics lifetime data has been collected in controlled laboratory conditions by introducing predetermined concentrations of contaminants and monitoring degradation in terms of transmission loss. This publication compliments prior work by documenting field experience with the 157nm Exitech Microstepper currently in operation at International SEMATECH. Failure mechanisms of various optical components are presented and molecular contamination levels in purge gas, tool enclosure, and clean room are documented. Finally the impacts of contaminant deposition and degradation of components on imaging performance is discussed.
Laser resistance of fused silica, used as lens material in DUV microlithography, is one of the keys to long-term high-level optical performance of steppers and scanners. The exposure of fused silica to high energy excimer laser pulses over long periods of time modifies the material in several different ways: the optical absorption increases due to laser-induced formation of color centers; the density of the material changes due to structural relaxation and formation of (beta) -hydroxyl (SiOH); and finally the index of refraction changes due to a photorefractive effect. All of these effects affect the imaging quality of illuminator systems and projection lenses, hence the need for fundamental understanding and modeling.
The path to smaller semiconductor feature sizes demands that lens systems operate at higher numerical apertures and shorter wavelengths. Materials available for operation at shorter wavelengths, such as 157nm, exhibit properties that have strong wavelength dependence. Accurate characterization of lens performance must be done at the wavelength of use so as to include these effects. Measurement of optical system performance at 157nm brings with it the necessity to operate in an environment purged of gases and outgasing byproducts. This constraint coupled with increasingly tight tolerances necessary to meet the advancing requirements of the semiconductor industry raise the level of sophistication required of test set-ups. We present an interferometric set-up designed to meet these requirements. The set-up is designed to work with the very low temporal and spatial coherence typical of 157nm laser sources. These coherence properties are used advantageously, reducing coherent noise in the system and achieving high resolution, repeatability and accuracy simultaneously. Specialized instrumentation enables various error-separation techniques to be used. We now measure phase-retardance in the wavefront in order to characterize the error introduced by the intrinsic properties of the material. The combination of these features is required for 'at wavelength' optimization of 157nm lens systems.
Aberrations, aberrations, here there everywhere but how do we collect useful data that can be incorporated into our simulators? Over the past year there have no less than 18 papers published in the literature discussing how to measure aberrations to answering the question if Zernikes are really enough. The ability to accurately measure a Zernike coefficient in a timely cost effective manner can be priceless to device manufacturers. Exposure tool and lens manufacturers are reluctant to provide this information for a host of reasons, however, device manufacturers can use this data to better utilize each tool depending on the level and the type of semiconductors they produce. Dirksen et al. first discussed the ring test as an effective method of determining lens aberrations in a step and repeat system, later in a scanning system. The method is based on two elements; the linear response to the ring test to aberrations and the use of multiple imaging conditions. The authors have been working to further enhance the capability on the test on the first small field 157 nm exposure system at International SEMATECH. This data was generated and analyzed through previously discussed methods for Z5 through Z25 and correlated back to PMI data. Since no 157nm interferemetric systems exist the lens system PMI data was collected at 248nm. Correlation studies have isolated the possible existence of birefringence in the lens systems via the 3-foil aberration which was not seen at 248nm. Imaging experiments have been conducted for various geometry's and structures for critical dimensions ranging from 0.13micrometers down to 0.10micrometers with binary and 0.07micrometers with alternating phase shift mask. The authors will review the results of these experiments and the correlation to imaging data and PMI data.
Lithographic lens systems are continually being designed to work at shorter wavelengths and higher numerical apertures. The prospect of 157 nm F2 excimer-based lithography presents many demanding new challenges to lithographic lens manufacturers. Lens fabricators must re-orient themselves to handling and finishing more delicate optical materials such as calcium fluoride to unprecedented surface requirements. Thin film engineers are pressed to deliver a multitude of new optical coatings, but with a dramatically limited selection of raw materials. And optical test engineers are presented with new testing challenges: among them is at-wavelength interferometric testing of lithographic objectives using an F2 excimer laser source. Requirements for constructing such an interferometer dictate a design containing several nitrogen-purged beam paths and a camera capable of detecting 157 nm radiation. These contribute to an interferometer that is cumbersome and expensive when applied to production testing of lithographic lens assemblies. In addition, complications emerge in the interferometer design due to the relatively poor coherence in the 157 nm F2 excimer source. Fortunately, off-wavelength sources (usually at a 'user-friendly' longer wavelength) can be applied to transmitted wavefront testing of lithographic objectives designed for shorter wavelengths, while still providing nearly perfect and predictable at-wavelength imagery. This testing approach requires additional null optics to correct for off-wavelength spherochromatism effects. We have successfully used off-wavelength 248 nm interferometer testing to characterize 193 nm ArF lens systems, and this approach has been extended to the 157 nm regime by incorporating a well-characterized null corrector. We explain methods to perform null corrector characterization: We describe a technique to separate the non-rotationally symmetric errors introduced by a multi-element null corrector from the errors in the lithographic lens under test. We also discuss methods to characterize the rotationally symmetric errors introduced by this null corrector. In addition, we describe a method to cascade the error separation algorithm such that additional non-rotationally symmetric errors are also isolated. Test results are included and discussed.
Full acceptance of 157nm technology for next generation lithography requires that critical optical components and systems be characterized at this wavelength. Some of the challenges inherent in the 157nm test regime include purged beam paths, a partially coherent and astigmatic light source, limitations in reflective and transmissive optical components, and immature CCD detector technology. A Twyman-Green interferometer specially devised for testing lithographic objective lenses and systems at 157nm that addresses these challenges is presented. A description of the design and components used is provided along with test results obtained with the interferometer.
Progress along the path towards smaller semiconductor feature sizes continually presents new challenges. 157nm technology is a promising new step along this path. The major challenges encountered to date include environmental purging for high transmission and beam alignment in a purged environment at this short wavelength. We present a simple shearing interferometer consisting of two Ronchi phase gratings in series, used on axis. The common path set-up and zero optical path difference between the interfering diffraction orders makes this device both robust and easy to align. Ease of alignment is an added benefit when working remotely in a purged environment with low light levels. If one grating is shifted relative to the other, a phase shift is introduced and phase measurement techniques can be employed for high accuracy characterization of the incident wavefront. Set-ups, measurements and characterization of wavefronts and spatial-coherence at 157nm made with this device are presented.
Tropel has developed a new instrument for the measurement of next generation photomasks. The instrument is capable of measuring the flatness of rough lapped, fine lapped and polished mask blanks with better than 0.1 micrometer accuracy. Well suited to production control and process development, the instrument utilizes a non-contact method to perform complete surface evaluation in less than 1 minute. The fundamental measurement technique is grazing-incidence interferometry. A novel optical design suppresses interference fringes from unwanted second surface reflections. This is a significant advantage over normal- incidence interferometers that typically require photomasks to be temporarily coated to address second surface interference effects. Coating and subsequent cleaning may damage polished photomasks as well as add unnecessary process steps.
Annular illumination has been studied as a method for improving depth of focus (DOF) in microlithographic systems. A 2X increase in DOF for 0.25 micrometers dense line/space features has been demonstrated using a deep-UV exposure tool with annular illumination. The same increase in DOF for 0.35 micrometers dense line/space patterns has been demonstrated using an i- line exposure tool employing annular illumination. No improvement in isolated features has been found. Annular illumination exhibits no degradation in isolated feature DOF, but the critical dimension (CD) split between dense and isolated features is affected when using annular illumination. Prototype i-line and deep-UV annular illumination systems have been built and tested which minimize the reduction in intensity and loss of uniformity control when using annular illumination. We have employed the use of conical optics as a high efficiency method of producing ring-shaped illumination in an i-line illumination system. The deep-UV prototype system uses a pre-uniformizer device to convert the collimated excimer laser light into a flat-top pupil fill which is then centrally obscured to produce annular illumination.
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