Dr. Paul Hongen Shen
Senior Scientist at U.S. Army Research Lab.
SPIE Involvement:
Conference Program Committee | Author
Publications (56)

PROCEEDINGS ARTICLE | June 11, 2013
Proc. SPIE. 8704, Infrared Technology and Applications XXXIX
KEYWORDS: Infrared detectors, Long wavelength infrared, Mid-IR, Continuous wave operation, Luminescence, Infrared radiation, Antimony, Gallium, Superlattices, Temperature metrology

PROCEEDINGS ARTICLE | October 15, 2012
Proc. SPIE. 8512, Infrared Sensors, Devices, and Applications II
KEYWORDS: Infrared detectors, Long wavelength infrared, Semiconductors, Sensors, Electrons, Quantum efficiency, Superlattices, Stereolithography, Astatine, Temperature metrology

PROCEEDINGS ARTICLE | May 25, 2012
Proc. SPIE. 8377, Energy Harvesting and Storage: Materials, Devices, and Applications III
KEYWORDS: Semiconductors, Electrodes, Photons, Semiconductor materials, Silicon, Hydrogen, Gallium nitride, Indium gallium nitride, Gallium, Absorption

PROCEEDINGS ARTICLE | September 16, 2011
Proc. SPIE. 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II
KEYWORDS: Long wavelength infrared, Indium arsenide, Sensors, Luminescence, Interfaces, Doping, Gallium antimonide, Infrared radiation, Superlattices, Temperature metrology

PROCEEDINGS ARTICLE | February 22, 2008
Proc. SPIE. 6889, Physics and Simulation of Optoelectronic Devices XVI
KEYWORDS: Semiconductors, Quantum wells, Light emitting diodes, Polarization, Interfaces, Field effect transistors, Bismuth, Gallium, Electron holes, Heterojunctions

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Quantum wells, Light emitting diodes, Luminescence, Quantum dots, Transmission electron microscopy, Aluminum, Aluminum nitride, Picosecond phenomena, Gallium, Molecular beam epitaxy

Showing 5 of 56 publications
Conference Committee Involvement (7)
Physics and Simulation of Optoelectronic Devices XVII
26 January 2009 | San Jose, California, United States
Physics and Simulation of Optoelectronic Devices XVI
21 January 2008 | San Jose, California, United States
Physics and Simulation of Optoelectronic Devices XV
22 January 2007 | San Jose, California, United States
Physics and Simulation of Optoelectronic Devices XIV
22 January 2006 | San Jose, California, United States
Physics and Simulation of Optoelectronic Devices XIII
24 January 2005 | San Jose, California, United States
Showing 5 of 7 published special sections
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