Argon ion implantation has been investigated as a means of achieving resist stabilization, such that a
second resist layer may be patterned without attacking the 1st layer. The viability of such an
approach has been investigated for double printing. Potential benefits include resist feature shrinkage
and Line Width Roughness (LWR) improvements. Line shrinkage benefits the lithographic process
window as features can be printed larger, while improvements in LWR, is a further valuable
attribute. We report on the role played by ion implant dose, its impact on both lateral and vertical
resist shrinkage, LWR as well as its impact on organic BARC reflectivity. The performance of such
masks during dry etching of a gate layer has been additionally evaluated.