Deep states in semi-insulating Si are investigated by analyzing of two-dimensional Photo-Induced Transient Spectroscopy (PITS) spectra. The results exemplify new potentialities of the advanced computer programming technique.
The technique of low frequency noise vs temperature is a powerful tool for study of deep level impurities in semiconductors materials. The physical parameters of the deep level defects are possible to identify from noise data. Measurement system to measure low noise spectra in frequency range from 0.01 kHz at temperature from 77K to 350K has been described.
High resolution photo induced transient spectroscopy has been utilized to study defect centers in semi-insulating molecular beam epitaxy GaAs grown at temperatures 300 and 400 $DEGC. A number of traps with activation energies ranging from 0.004 to 0.64 eV have been detected. The traps are tentatively identified with native defects in GaAs lattice. The effect of the growth temperature on the defect structure of the layers is shown.
Defect structure of semi-insulating GaAs substrates manufactured by various vendors were compared using High Resolution Photo-Induced Transient Spectroscopy. A number of defect centers related to native defects and metallic impurities were detected and the concentrations of these centers were estimated.
Electrically active defects in preannealed n-type Cz-Si crystals subjected to high-pressure heat treatment were studied by deep level transient spectroscopy (DLTS). Experimental evidence is given that electron traps at E<SUB>c</SUB> - 0.20 eV, E<SUB>c</SUB> - 0.45 eV and E<SUB>c</SUB> - 0.62 eV are presumably related to an oxygen-multivacancy complex, an acceptor level of Ni and a point defect decorating extended defects, respectively.