We have investigated structures grown on InP substrate by gas source molecular beam epitaxy and composed of InAs/In0.53Ga0.23Al0.24As quantum dash (QDash) layer and In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well (QW) separated by a thin barrier allowing the carriers tunneling between these parts. The growth conditions for QDashes have been optimized to achieve their ground state emission at 1.55 ?m suitable for telecommunication laser applications, whereas the well parameters have been chosen to get the QW ground state levels above the dash ones, i.e. a construction allowing the injection of carriers from the QW layer (injector) into the dashes (emitter). Basing on photoreflectance spectra, supported by effective mass calculations, we have studied the electronic structure of the system, determining the energy levels and band offsets. The QW-QDash energy transfer has been probed by temperature dependent photoluminescence with changed excitation wavelength, where an efficient tunneling has been evidenced directly in the photoluminescence excitation spectra up to 130 K.