In the early development stage of 32nm processes, identifying and isolating systematic defects
is critical to understanding the issues related to design and process interactions. Conventional
inspection methodologies using random review sampling on large defect populations do not provide
the information required to take accurate and quick corrective action. This paper demonstrates the
successful identification and isolation of systematic defects using a novel methodology that
combines Design Based Binning (DBB) and inline Defect Organizer (iDO). This new method of
integrating design and defect data produced actionable inspection data, resulting in fewer mask
revisions and reduced device development time.