Mr. Peng Luo Profile

Peng Luo

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Proceedings Article | 15 October 2021 Poster + Paper

Research on on-resistance of 4H-SiC photoconductive switch

Jiyang Shang, Yu Zhang, Haiyang Ding, Peng Luo, Minjia Lin, Chongbin Yao

Proceedings Volume 11894, 118941A (2021) https://doi.org/10.1117/12.2602755

KEYWORDS: Switches, Silicon carbide, Resistance, Electrodes, Crystals, Vanadium, Pulsed laser operation, Picosecond phenomena, Laser energy, Doping

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A complementary coplanar interdigital electrode photoconductive switch based on vanadium-nitrogen doped 4H-SiC bulk material was developed. The test results show that the combination of vanadium doping and coplanar interdigital electrode structure, the voltage capability of 4H-SiC photoconductive switch is significantly improved and the conductive resistance of 4H-SiC photoconductive switch under low light intensity is reduced. The bias voltage of 4H-SiC photoconductive switch is 10kV. The conductive resistance of 4H-SiC photoconductive switch excited by 0.4mJ 532nm laser is 50Ω. In a 50 Ω microwave system, the peak power output by the load is 0.5MW. By continuously increasing the injected laser energy to 2mj, the on resistance can be reduced to 6 Ω. The results show that the developed vanadium-nitrogen doped 4H-SiC photoconductive switch has the characteristics of stable output waveform, small jitter and high power. The developed vanadium-nitrogen doped 4H-SiC photoconductive switch has certain application value.

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