Self-assembled lateral aligned InAs quantum dot molecules (QDMs) with In<sub>x</sub>Ga<sub>1-x</sub>As strain-reducing layer are grown on
GaAs substrate by metal-organic chemical vapor deposition. The effects of growth temperature and In content of In<sub>x</sub>Ga<sub>1-x</sub>As on the structural and optical properties of QDMs are investigated by using atomic force microscopy and
photoluminescence. It is found that through appropriately selecting growth parameters, QDMs composed of two closely
spaced InAs QDs are formed, and a redshift of emission wavelength and wideband photoluminescence spectra of QDMs
are observed, which make QDM a potential candidate for broadband optical devices.
A novel multi-electrode SOA is proposed to use as all-optical wavelength converter based on XGM, dynamic frequency
chirp characteristics are analyzed with a multi-section model, and the peak to peak chirp is simulated as a function of
total injection current, signal and probe light power and bit rate. The numerical results show that the carrier non-uniform
distribution in MSOAs can be controlled by selecting different segment length and current, thus the frequency chirp can
be flexibly manipulated. Therefore, Multi-electrode is an effective and promising technology to improve SOA's dynamic
performance in optical communication.