Luxtera and TSMC have jointly developed a new generation 100Gbps/λ-capable silicon photonics platform in a commercial 300 mm CMOS line. We present process details and the performance of the photonic device library.
In this paper we discuss design and characterization of silicon-photonics-based 100 Gbps (4×26 Gbps) transceivers for parallel single mode fiber communication. We also address some key underlying technologies including silicon photonics wafer processing, photonic device libraries, light source integration and packaging technologies.
Shared shuttle runs are an important factor of the microelectronics business ecosystem, allowing fabless semiconductor
companies to access advanced processes and supporting the development of new tools and processes. We report on the
creation and progress of a shared shuttle program for access to advanced silicon photonics optoelectronic platforms that
we expect will create a similar environment for the field of integrated photonics.
We report on the performance of an integrated four-channel parallel optical transceiver built in a CMOS photonics
process, operating at 28 Gb/s per channel. The optical engine of the transceiver comprises a single silicon die and a
hybrid integrated DFB laser. The silicon die contains the all functionalities needed for an optical transceiver: transmitter
and receiver optics, electrical driver, receiver and control circuits. We also describe the CMOS photonics platform used
to build such transceiver device, which consists of: an optically enabled CMOS process, a photonic device library, and a
design infrastructure that is modeled after standard circuit design tools. We discuss how this platform can scale to higher
speeds and channel counts.
Design, manufacture and reliability of 2D MEMS optical switches
2D Optical switches are an ideal solution for several optical switching applications in telecommunications including optical cross-connects, reconfigurable optical add-drop multiplexers and fiber-optic protection switching and monitoring. In this paper we address aspects of the design and manufacturing of 2D MEMS based optical switches. Important design areas such as MEMS, optics, packaging and optical performance are discussed. Reliability is an extremely important aspect for all devices used in telecom systems. We will address potential reliability issues as well as their resolution and verification.
Fiber-optic switches are becoming increasingly important for fiber management, restoration and provisioning applications in dense wavelength division multiplexed (DWDM) long distance telecom networks. Specific applications for optical switches include optical crossconnects and optical add/drop multiplexers.
BeamBox polymer based fiber-optic space switches have been submitted to a reliability qualification program. The results of this program show that these switches meet the requirements for telecommunication applications. Highly stable switches have been obtained by proper design, testing, and optimization of materials, parts, and production processes.
The integration of efficient semiconductor lightsources with low-loss functional optical waveguide devices is one of the major problems in integrated optics. In this paper we present a novel integration scheme based on the epitaxial lift-off technique for the integration of a laser diode array with an array of polymeric waveguides. This method shows a number of advantages with respect to previously reported solutions. The presented quasi-monolithic integration of laser diodes with polymeric waveguides might lead to important applications in areas such as optical interconnections and optical communications.
Fully processed A1GaAs/GaAs LEDs were lifted off their GaAs substrates and grafted to various host substrates. Due to a metallic back reflector beneath the epitaxial structure, the LED output power was 2 to 3 times increased compared to LEDs
still on a GaAs substrate. Output power and spectral responses were significantly influenced by the thermal properties of the
InGaAs/AlGaAs Strained Layer Superlattices (SLS) have been grown using the MOVPE technique. These layers were characterized by X-ray, photoluminescence, photocurrent and transmission measurements. With this material optical modulators and LEDs were made working at a wavelength for which the GaAs substrate is transparent. Reverse biasing the modulator resulted in a large absorption shift in the photocurrent spectra due to the Quantum Confined Stark Effect (QCSE) on the quantum wells. An InGaAs/AlGaAs SLS compared favorably with similar InGaAs/GaAs SLSs. A back-side emitting LED, with an InGaAs SQW as the active layer, gave a maximal output power of about 8 micro-W/mA/Sr.