Dr. Petteri Uusimaa Profile

Dr. Petteri Uusimaa

President & CEO at Modulight Inc

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Publications (8)

PROCEEDINGS ARTICLE | April 1, 2015

Separate phase-locking and coherent combining of two laser diodes in a Michelson cavity

Proc. SPIE. 9348, High-Power Diode Laser Technology and Applications XIII

KEYWORDS: Fiber amplifiers, Beam splitters, Optical amplifiers, Mode locking, High power lasers, Coating, Semiconductor lasers, Information technology, Neodymium, Phase shifts

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PROCEEDINGS ARTICLE | March 12, 2014

Robust adhesive precision bonding in automated assembly cells

Proc. SPIE. 8965, High-Power Diode Laser Technology and Applications XII

KEYWORDS: Glasses, Optical fabrication, Semiconductor lasers, Micro optics, Beam shaping, Adhesives, Tolerancing, Precision optics, Assembly tolerances, Laser systems engineering

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PROCEEDINGS ARTICLE | February 17, 2011

Development of high-speed directly modulated DFB and DBR lasers with surface gratings

Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X

KEYWORDS: Refractive index, Modulation, Waveguides, Cladding, Etching, Laser development, Resistance, Phase shift keying, Scanning electron microscopy, Distributed Bragg reflectors

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PROCEEDINGS ARTICLE | September 25, 2009

Ultra high efficiency 1550nm multi-junction pulsed laser diodes

Proc. SPIE. 7480, Unmanned/Unattended Sensors and Sensor Networks VI

KEYWORDS: Light sources, Quantum wells, Etching, Metals, Laser processing, Reliability, Doping, Amplifiers, Semiconductor lasers, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 4, 2001

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

Proc. SPIE. 4286, Vertical-Cavity Surface-Emitting Lasers V

KEYWORDS: Mirrors, Quantum wells, External quantum efficiency, Aluminium gallium indium phosphide, Metals, Reflectivity, Aluminum, Vertical cavity surface emitting lasers, Gallium, Molecular beam epitaxy

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PROCEEDINGS ARTICLE | May 6, 1999

Confocal photoluminescense microscopy in II-VI materials: annealing and degradation dynamics

Proc. SPIE. 3605, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing VI

KEYWORDS: Semiconductors, Confocal microscopy, Microscopes, Quantum wells, Annealing, Microscopy, Luminescence, Gallium arsenide, Semiconductor lasers, Objectives

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PROCEEDINGS ARTICLE | April 1, 1999

High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Proc. SPIE. 3628, In-Plane Semiconductor Lasers III

KEYWORDS: High power lasers, Gallium arsenide, Reliability, Semiconductor lasers, Solids, Phosphorus, Metalorganic chemical vapor deposition, Arsenic, Molecular beam epitaxy, Indium gallium phosphide

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PROCEEDINGS ARTICLE | July 7, 1998

ZnSe-based light emitters grown on wide-gap III-V buffer layers

Proc. SPIE. 3283, Physics and Simulation of Optoelectronic Devices VI

KEYWORDS: Quantum wells, Light emitting diodes, Metals, Crystals, Interfaces, Gallium arsenide, Reflectivity, Doping, Semiconductor lasers, Optical microcavities

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Showing 5 of 8 publications

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