Dr. Petteri Uusimaa Profile

Dr. Petteri Uusimaa

VP & CTO at Modulight Inc

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Publications (8)

Proceedings Article | 1 April 2015 Paper

Separate phase-locking and coherent combining of two laser diodes in a Michelson cavity

G. Schimmel, Ioana Doyen, S. Janicot, L. P. Ramirez, M. Hanna, P. Georges, G. Lucas-Leclin, V. Vilokkinen, P. Melanen, P. Uusimaa, Jonathan Decker, P. Crump, G. Erbert, Stephen Bull, S. Kaunga-Nyirenda, E. Larkins

Proc. SPIE. 9348, High-Power Diode Laser Technology and Applications XIII

KEYWORDS: Mode locking, Semiconductor lasers, Optical amplifiers, High power lasers, Beam splitters, Coating, Phase shifts, Information technology, Neodymium, Fiber amplifiers

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Proceedings Article | 12 March 2014 Paper

Robust adhesive precision bonding in automated assembly cells

Tobias Müller, Sebastian Haag, Thomas Bastuck, Thomas Gisler, Hansruedi Moser, Petteri Uusimaa, Christoph Axt, Christian Brecher

Proc. SPIE. 8965, High-Power Diode Laser Technology and Applications XII

KEYWORDS: Adhesives, Assembly tolerances, Micro optics, Semiconductor lasers, Optical fabrication, Tolerancing, Glasses, Laser systems engineering, Precision optics, Beam shaping

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Proceedings Article | 17 February 2011 Paper

Development of high-speed directly modulated DFB and DBR lasers with surface gratings

M. Dumitrescu, J. Telkkälä, J. Karinen, J. Viheriälä, A. Laakso, S. Afzal, J.-P. Reithmaier, M. Kamp, P. Melanen, P. Uusimaa, P. Bardella, M. Vallone, I. Montrosset, O. Parillaud, M. Krakowski, D. Gready, G. Eisenstein, G. Sek

Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X

KEYWORDS: Modulation, Refractive index, Scanning electron microscopy, Etching, Distributed Bragg reflectors, Laser development, Phase shift keying, Resistance, Waveguides, Cladding

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Proceedings Article | 25 September 2009 Paper

Ultra high efficiency 1550nm multi-junction pulsed laser diodes

Jean-François Boucher, Ville Vilokkinen, Paul Rainbow, Petteri Uusimaa, Jari Lyytikäinen, Sanna Ranta

Proc. SPIE. 7480, Unmanned/Unattended Sensors and Sensor Networks VI

KEYWORDS: Semiconductor lasers, Etching, Laser processing, Doping, Metals, Semiconducting wafers, Quantum wells, Light sources, Reliability, Amplifiers

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Proceedings Article | 4 May 2001 Paper

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

Mika Saarinen, Ning Xiang, Mihail Dumitrescu, Ville Vilokkinen, Petri Melanen, Seppo Orsila, Petteri Uusimaa, Pekka Savolainen, Markus Pessa

Proc. SPIE. 4286, Vertical-Cavity Surface-Emitting Lasers V

KEYWORDS: Vertical cavity surface emitting lasers, Aluminum, Gallium, External quantum efficiency, Aluminium gallium indium phosphide, Quantum wells, Molecular beam epitaxy, Reflectivity, Mirrors, Metals

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Proceedings Article | 6 May 1999 Paper

Confocal photoluminescense microscopy in II-VI materials: annealing and degradation dynamics

Eithne McCabe, Christopher Jordan, D. Fewer, John Donegan, S. Taniguchi, T. Hino, Kazushi Nakano, Akira Ishibashi, Petteri Uusimaa, Markus Pessa

Proc. SPIE. 3605, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing VI

KEYWORDS: Confocal microscopy, Annealing, Semiconductor lasers, Quantum wells, Microscopes, Luminescence, Objectives, Microscopy, Semiconductors, Gallium arsenide

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Proceedings Article | 1 April 1999 Paper

High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Seppo Orsila, Mika Toivonen, Pekka Savolainen, Ville Vilokkinen, Petri Melanen, Markus Pessa, Mika Saarinen, Petteri Uusimaa, Pat Corvini, Fang Fang, Mitch Jansen, Rashit Nabiev

Proc. SPIE. 3628, In-Plane Semiconductor Lasers III

KEYWORDS: Molecular beam epitaxy, Semiconductor lasers, Indium gallium phosphide, High power lasers, Solids, Reliability, Gallium arsenide, Metalorganic chemical vapor deposition, Arsenic, Phosphorus

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Proceedings Article | 7 July 1998 Paper

ZnSe-based light emitters grown on wide-gap III-V buffer layers

Petteri Uusimaa, Arto Salokatve, Pekka Savolainen, A. Rinta-Moykky, Markus Pessa, A. Souifi, R. Adhiri, George Kiriakidis, K. Moschovis, J. Stoimenos

Proc. SPIE. 3283, Physics and Simulation of Optoelectronic Devices VI

KEYWORDS: Interfaces, Gallium arsenide, Light emitting diodes, Semiconductor lasers, Crystals, Reflectivity, Optical microcavities, Metals, Quantum wells, Doping

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Showing 5 of 8 publications

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