Dr. Petteri Uusimaa Profile

Dr. Petteri Uusimaa

VP & CTO at Modulight Inc

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Publications (8)

Proceedings Article | 1 April 2015

Separate phase-locking and coherent combining of two laser diodes in a Michelson cavity

G. Schimmel, Ioana Doyen, S. Janicot, L. P. Ramirez, M. Hanna, P. Georges, G. Lucas-Leclin, V. Vilokkinen, P. Melanen, P. Uusimaa, Jonathan Decker, P. Crump, G. Erbert, Stephen Bull, S. Kaunga-Nyirenda, E. Larkins

Proc. SPIE. 9348, High-Power Diode Laser Technology and Applications XIII

KEYWORDS: Fiber amplifiers, Beam splitters, Optical amplifiers, Mode locking, High power lasers, Coating, Semiconductor lasers, Information technology, Neodymium, Phase shifts

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Proceedings Article | 12 March 2014

Robust adhesive precision bonding in automated assembly cells

Tobias Müller, Sebastian Haag, Thomas Bastuck, Thomas Gisler, Hansruedi Moser, Petteri Uusimaa, Christoph Axt, Christian Brecher

Proc. SPIE. 8965, High-Power Diode Laser Technology and Applications XII

KEYWORDS: Glasses, Optical fabrication, Semiconductor lasers, Micro optics, Beam shaping, Adhesives, Tolerancing, Precision optics, Assembly tolerances, Laser systems engineering

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Proceedings Article | 17 February 2011

Development of high-speed directly modulated DFB and DBR lasers with surface gratings

M. Dumitrescu, J. Telkkälä, J. Karinen, J. Viheriälä, A. Laakso, S. Afzal, J.-P. Reithmaier, M. Kamp, P. Melanen, P. Uusimaa, P. Bardella, M. Vallone, I. Montrosset, O. Parillaud, M. Krakowski, D. Gready, G. Eisenstein, G. Sek

Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X

KEYWORDS: Refractive index, Modulation, Waveguides, Cladding, Etching, Laser development, Resistance, Phase shift keying, Scanning electron microscopy, Distributed Bragg reflectors

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Proceedings Article | 25 September 2009

Ultra high efficiency 1550nm multi-junction pulsed laser diodes

Jean-François Boucher, Ville Vilokkinen, Paul Rainbow, Petteri Uusimaa, Jari Lyytikäinen, Sanna Ranta

Proc. SPIE. 7480, Unmanned/Unattended Sensors and Sensor Networks VI

KEYWORDS: Light sources, Quantum wells, Etching, Metals, Laser processing, Reliability, Doping, Amplifiers, Semiconductor lasers, Semiconducting wafers

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Proceedings Article | 4 May 2001

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

Mika Saarinen, Ning Xiang, Mihail Dumitrescu, Ville Vilokkinen, Petri Melanen, Seppo Orsila, Petteri Uusimaa, Pekka Savolainen, Markus Pessa

Proc. SPIE. 4286, Vertical-Cavity Surface-Emitting Lasers V

KEYWORDS: Mirrors, Quantum wells, External quantum efficiency, Aluminium gallium indium phosphide, Metals, Reflectivity, Aluminum, Vertical cavity surface emitting lasers, Gallium, Molecular beam epitaxy

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Proceedings Article | 6 May 1999

Confocal photoluminescense microscopy in II-VI materials: annealing and degradation dynamics

Eithne McCabe, Christopher Jordan, D. Fewer, John Donegan, S. Taniguchi, T. Hino, Kazushi Nakano, Akira Ishibashi, Petteri Uusimaa, Markus Pessa

Proc. SPIE. 3605, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing VI

KEYWORDS: Semiconductors, Confocal microscopy, Microscopes, Quantum wells, Annealing, Microscopy, Luminescence, Gallium arsenide, Semiconductor lasers, Objectives

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Proceedings Article | 1 April 1999

High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Seppo Orsila, Mika Toivonen, Pekka Savolainen, Ville Vilokkinen, Petri Melanen, Markus Pessa, Mika Saarinen, Petteri Uusimaa, Pat Corvini, Fang Fang, Mitch Jansen, Rashit Nabiev

Proc. SPIE. 3628, In-Plane Semiconductor Lasers III

KEYWORDS: High power lasers, Gallium arsenide, Reliability, Semiconductor lasers, Solids, Phosphorus, Metalorganic chemical vapor deposition, Arsenic, Molecular beam epitaxy, Indium gallium phosphide

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Proceedings Article | 7 July 1998

ZnSe-based light emitters grown on wide-gap III-V buffer layers

Petteri Uusimaa, Arto Salokatve, Pekka Savolainen, A. Rinta-Moykky, Markus Pessa, A. Souifi, R. Adhiri, George Kiriakidis, K. Moschovis, J. Stoimenos

Proc. SPIE. 3283, Physics and Simulation of Optoelectronic Devices VI

KEYWORDS: Quantum wells, Light emitting diodes, Metals, Crystals, Interfaces, Gallium arsenide, Reflectivity, Doping, Semiconductor lasers, Optical microcavities

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Showing 5 of 8 publications

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