I will discuss the optical properties and possible applications of graphene in photonics and plasmonics. I will review the basics of the single particle and collective excitations of graphene, discuss the mechanisms of photocurrent generation in graphene and the design and characteristics of graphene-based photodetectors. I will show that the coupling of light to localized graphene plasmons provides an excellent way of enhancing the strength of graphene-light interaction. Plasmon excitations in graphene micro- and nano-structures and their use in graphene devices in the infrared and terahertz ranges of the EM spectrum will be discussed. The interactions of graphene plasmons with intrinsic graphene and substrate phonons and their implications will also be analyzed.
We report here recent progress in nanophotonics with single-wall carbon nanotubes (SWNTs). A photonic model structure, the planar λ/2-microcavity, modifies the photonic density of modes at the location of the embedded SWNTs. As a result, the radiative properties of the SWNTs are modified due to the enhancement or inhibition of the microcavity-controlled spontaneous emission (scattering) rate. We use single-molecule optical microscopy and spectroscopy to investigate individual SWNTs (bundles), spatially isolated and immobilized in the photonic structure, and to measure the microcavity-controlled emission (Raman and photoluminescence) characteristics. Ultimately, we demonstrate experimentally that the integration of a field-effect transistor (FET) based on a single, semiconducting SWNT with a λ/2-microcavity results in a strong spectral and angular narrowing of the electrically excited and cavity-enhanced infrared radiation emitted by the nano-light source. Integrated nanophotonic devices based on carbon nanotubes hold great promise for application in quantum optics and optical communication.
Conference Committee Involvement (2)
Carbon Nanotubes, Graphene, and Associated Devices II
5 August 2009 | San Diego, California, United States
Carbon Nanotubes and Associated Devices
10 August 2008 | San Diego, California, United States