Dr. Philip Moser
at Stanford University
SPIE Involvement:
Author
Area of Expertise:
vertical-cavity surface emitting lasers (VCSELs) , energy-efficient VCSELs , high-speed VCSELs , optical interconnects
Profile Summary

Philip Moser was born in Berlin, Germany, in 1983. He received the Diploma (M.S. equivalent) and the PhD in physics from the Technische Universitat Berlin, Berlin, Germany in 2008 and 2015, respectively. From 2008 to 2015 he was scientific staff member of the research group of Prof. Dieter Bimberg at the Institute of Solid State Physics and the Center of Nanophotonics at Technische Universität Berlin, where in 2016 he joined the group of Prof. James A. Lott as a postdoctoral researcher. Philip Moser is currently a Postdoctoral Researcher at the Stanford University, CA, USA in the group of Prof. James Harris.

Mr. Moser's research interests include the fabrication and characterization of high-speed vertical-cavity surface-emitting lasers with focus on energy-efficient data transmission, hybrid integration, and temperature stable VCSEL performance for future very short reach optical interconnects and silicon photonics.

He received the SPIE Green Photonics Award in Communications in 2012 and again in 2014, and was corecipient of the SPIE Green Photonics Award in Communications in 2015. He received the Dimitri N. Chorafas Foundation Award in 2012 for his doctoral research, the Photonics21 Student Innovation Award 2014 for his work on energy-efficient vertical-cavity surface-emitting lasers, and the Springer Theses Award in 2015. In December 2016 Philip Moser received a Feodor-Lynen Research Fellowship from the Alexander von Humboldt Foundation.

Mr. Moser is a member of the Deutsche Physikalische Gesellschaft (DPG) and the Institute of Electrical and Electronics Engineers (IEEE).
Publications (22)

PROCEEDINGS ARTICLE | February 25, 2017
Proc. SPIE. 10122, Vertical-Cavity Surface-Emitting Lasers XXI
KEYWORDS: Antireflective coatings, Quantum wells, Lithium, Modulation, Metals, Gallium arsenide, Resistance, Distributed Bragg reflectors, Vertical cavity surface emitting lasers, Semiconducting wafers

PROCEEDINGS ARTICLE | February 25, 2017
Proc. SPIE. 10122, Vertical-Cavity Surface-Emitting Lasers XXI
KEYWORDS: Wafer-level optics, Oxides, Modulation, Metals, Image processing, Resistance, Doping, Vertical cavity surface emitting lasers, Optical interconnects, Semiconducting wafers

PROCEEDINGS ARTICLE | February 25, 2017
Proc. SPIE. 10122, Vertical-Cavity Surface-Emitting Lasers XXI
KEYWORDS: Oxides, Modeling, Capacitors, Modulation, Photons, Resistance, Gallium nitride, Capacitance, Picosecond phenomena, Vertical cavity surface emitting lasers

PROCEEDINGS ARTICLE | April 28, 2016
Proc. SPIE. 9892, Semiconductor Lasers and Laser Dynamics VII
KEYWORDS: Oxides, Capacitors, Modulation, Modulation, Optical properties, Gallium arsenide, Laser applications, Resistance, Capacitance, Optical resonators, Vertical cavity surface emitting lasers, Electroluminescent displays, Thermal modeling, Systems modeling, Instrument modeling, Oxidation

PROCEEDINGS ARTICLE | March 4, 2015
Proc. SPIE. 9381, Vertical-Cavity Surface-Emitting Lasers XIX
KEYWORDS: Oxides, Switching, Modulation, Gallium arsenide, Computing systems, Telecommunications, Integrated optics, Vertical cavity surface emitting lasers, Semiconducting wafers, Optical microcavities

PROCEEDINGS ARTICLE | March 4, 2015
Proc. SPIE. 9381, Vertical-Cavity Surface-Emitting Lasers XIX
KEYWORDS: Oxides, Internet, Energy efficiency, Modulation, Integrated circuits, Picosecond phenomena, Vertical cavity surface emitting lasers, Data centers, Optical interconnects, Temperature metrology

Showing 5 of 22 publications
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