Dr. Philip K. Seidel Profile

Dr. Philip K. Seidel

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Publications (8)

Proceedings Article | 21 March 2008 Paper

Status of EUV reticle handling solution in meeting 32 nm HP EUV lithography

Long He, Stefan Wurm, Phil Seidel, Kevin Orvek, Ernie Betancourt, Jon Underwood

Proceedings Volume 6921, 69211Z (2008) https://doi.org/10.1117/12.773278

KEYWORDS: Reticles, Extreme ultraviolet, Photomasks, Particles, Inspection, Extreme ultraviolet lithography, Contamination, Robotics, EUV optics, Manufacturing

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Proceedings Article | 14 May 2007 Paper

Commercial EUV mask-blank readiness for 32-nm HP manufacturing

Phil Seidel

Proceedings Volume 6607, 66070I (2007) https://doi.org/10.1117/12.728931

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Defect inspection, Inspection, Metrology, Manufacturing, Extreme ultraviolet lithography, Reflectometry, Temperature metrology

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Successful commercialization of extreme ultraviolet lithography (EUVL) requires high quality EUV mask blanks for patterned masks that are essentially defect-free and very flat with high performance reflective multilayers. For 32 nm half-pitch (HP) integrated circuit manufacturing, such blanks require zero defects down to 25 nm diameter sizes while simultaneously meeting other specifications. At least three critical specifications that need continued improvements (total defects, defect size inspection, and substrate flatness control) are challenging to attain individually; meeting all requirements simultaneously will be especially challenging. Since early 2003, SEMATECH has been engaged with the mask blank materials and mask tool supplier community to drive the readiness of alpha, beta, and production mask blanks to support EUV lithography introduction. SEMATECH uses its commercial mask blank development roadmap together with neutral metrology evaluations of commercial suppliers' materials to monitor progress against needed production requirements. Commercial blank capability has improved significantly over the past two years; however, beta-level performance has still not been attained for all requirements. Attaining integrated blank specifications is more difficult than meeting individual specifications. Significant improvements including defectivity, flatness, coefficient of thermal expansion (CTE), reflectivity, wavelength control, and buffer/absorber stack performances are needed. Several orders of magnitude improvement is needed in defectivity levels alone coupled with increased detection sensitivity to 25 nm diameter defects. This paper will illustrate the recent rate of improvements along with an updated SEMATECH commercial roadmap, highlighting individual specification performances and total blank integrated performance levels currently better than 0.2 def/cm² at ≥ 80 nm polystyrene latex (PSL), peak reflectivity ≥ 64.0%, substrate flatnesses ≤ 175 nm peak-to-valley (P-V), with other key requirements. EUV blank cost of ownership studies will highlight the cost to manufacture these materials and show potential issues if yields are marginal.

Proceedings Article | 3 May 2007 Paper

EUV mask infrastructure challenges

Stefan Wurm, Phil Seidel, Chris Van Peski, Long He, Hakseung Han, Pat Kearney, Wonil Cho

Proceedings Volume 6533, 65330Z (2007) https://doi.org/10.1117/12.737154

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Reticles, Defect inspection, Extreme ultraviolet lithography, Manufacturing, Semiconducting wafers, Standards development, Printing

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Proceedings Article | 15 March 2007 Paper

Status and path to a final EUVL reticle-handling solution

Long He, Kevin Orvek, Phil Seidel, Stefan Wurm, Jon Underwood, Ernie Betancourt

Proceedings Volume 6517, 65171O (2007) https://doi.org/10.1117/12.712872

KEYWORDS: Reticles, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Particles, Pellicles, Inspection, Robotics, Contamination, Standards development

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Proceedings Article | 13 March 2007 Paper

EUV and non-EUV inspection of reticle defect repair sites

Kenneth Goldberg, Anton Barty, Phillip Seidel, Klaus Edinger, Rainer Fettig, Patrick Kearney, Hakseung Han, Obert Wood

Proceedings Volume 6517, 65170C (2007) https://doi.org/10.1117/12.712202

KEYWORDS: Extreme ultraviolet, Inspection, Reflectivity, Multilayers, Photomasks, Scattering, Signal attenuation, Light scattering, Scanning electron microscopy, Ultraviolet radiation

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Proceedings Article | 6 May 2005 Paper

EUV mask blank readiness for 45-nm HP 2009 manufacturing

Phil Seidel

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600544

KEYWORDS: Reflectivity, Extreme ultraviolet, Photomasks, Metrology, Extreme ultraviolet lithography, Reflectometry, Manufacturing, Inspection, Defect inspection, Lithography

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Proceedings Article | 1 July 2002 Paper

NGL process and the role of International SEMATECH

Giang Dao, R. Mackay, Philip Seidel

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472289

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Lithography, Extreme ultraviolet, Optics manufacturing, Manufacturing, EUV optics, X-rays, Resolution enhancement technologies, X-ray technology

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International SEMATECH (ISMT) established a program in 1996 to narrow the Next Generation Lithography (NGL) options on the SIA Roadmap through a global consensus process. Methodologies developed by the SIA Lithography Technical Working Group (TWG) were adopted to ensure a balanced and objective assessment. Critical reviews with emphasis on technical program plans, solutions to critical issues (showstoppers), error budget analysis, cost-of-ownership, business plans, and schedules were implemented with the Technical Champions of each technology. White papers were written by the Technical Champion teams to better educate the participants in the annual worldwide NGL workshops. Participants made their recommendations through a survey conducted at the end of each workshop. A Task Force of the key stakeholders from global chip makers, equipment suppliers and consortia was commissioned to review the workshop output, assess the progress on the critical issues and make recommendations to ISMT on narrowing the options. As a result of this global consensus process and the critical issue projects, the NGL Task Force has made the following recommendations: (i) November 1997 - Massively Parallel Direct Write (MPDW) is not mature enough for introduction until at least the 50nm node. (ii) December 1998 - ISMT should narrow its support to two options EUVL and EPL, and that other worldwide activity on X-Ray and IPL continue. (iii) December 1999 - ISMT should continue its support for EUVL and EPL for the 70nm node, it also recognized the growing possibility that the industry might need more than one mainstream technology for the diverging application of DRAM/MPU and ASIC/SOC. (iv) September 2000 - The industry in general should narrow its support for commercialization to EUVL and EPL for insertion at the 70nm node. (v) August 2001 - The industry should continue to fund the commercialization of both EUVL and EPL. Today, the ISMT program for NGL is transitioning from option selection to promoting critical issues solutions and commercial infrastructure for EUVL with initial focus on mask blanks. ISMT is also pursuing collaboration with the suppliers and consortia developing EPL technology to provide stable stencil mask for contact layers. This paper describes the evolution of the program, results of the year 2001 activities, and the plans for 2002.

Proceedings Article | 19 July 2000 Paper

Mask cost of ownership for advanced lithography

Edward Muzio, Philip Seidel

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392078

KEYWORDS: Photomasks, Inspection, Lithography, Manufacturing, Etching, Process modeling, Extreme ultraviolet, EUV optics, Reticles, Critical dimension metrology

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