The basic features of the recently proposed Charge-Controlled Non-linear Noise (CCNN) model for the prediction of low-to-high-frequency noise up-conversion in electron devices under large-signal RF operation are synthetically presented. It is shown that the different noise generation phenomena within the device can be described by four equivalent noise sources, which are connected at the ports of a “noiseless” device model and are non-linearly controlled by the time-varying instantaneous values of the intrinsic device voltages. For the empirical identification of the voltage-controlled equivalent noise sources, different possible characterization procedures, based not only on conventional low-frequency noise data, but also on different types of noise measurements carried out under large-signal RF operating conditions are discussed. As an example of application, the measurement-based identification of the CCNN model for a GaInP heterojunction bipolar microwave transistor is presented. Preliminary validation results show that the proposed model can describe with adequate accuracy not only the low-frequency noise of the HBT, but also its phase-noise performance in a prototype VCO implemented by using the same monolithic GaAs technology.
Measurement-based, circuit-oriented non-linear noise modeling of microwave electron devices is still an open field of research, since existing approaches are not always suitable for the accurate prediction of low-frequency noise up-conversion to RF, which represents an essential information for the non-linear circuit analyses performed in the CAD of low phase-noise oscillators. In this paper a technology-independent, empirical approach to the modeling of noise contributions at the ports of electron devices, operating under strongly non-linear conditions, is proposed. Details concerning the analytical formulation of the model, which is derived by considering randomly time-varying perturbations in the basic equations of an otherwise conventional charge-controlled non-linear model, are presented, along with a discussion about the measurement techniques devoted to its experimental characterization. An example of application of the proposed Charge-Controlled Non-linear Noise (CCNN) model is considered in the case of a HBT transistor. Techniques devoted to the implementation of the obtained model in the framework of commercial CAD tools for circuit analysis and design are provided as well.