Prof. Pierre J. L. Gibart
Director of Research at CNRS
SPIE Involvement:
Author
Publications (5)

Proceedings Article | 28 August 2002 Paper
Proc. SPIE. 10303, Gallium-Nitride-based Technologies: A Critical Review
KEYWORDS: Epitaxial lateral overgrowth, Gallium nitride, Dielectrics, Heteroepitaxy, Epitaxy, Fabrication, Luminescence, Laser applications, Light sources, Laser liftoff

Proceedings Article | 13 April 2000 Paper
Proc. SPIE. 3948, Photodetectors: Materials and Devices V
KEYWORDS: Gallium nitride, Photodiodes, Photodetectors, Ultraviolet radiation, Aluminum, Sapphire, Visible radiation, Semiconductors, Sensors, Radiation effects

Proceedings Article | 8 April 1999 Paper
Proc. SPIE. 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
KEYWORDS: Gallium nitride, Nitrogen, Sapphire, Magnesium, Plasma, Vapor phase epitaxy, Epitaxy, Light emitting diodes, Thermodynamics, Reflectivity

Proceedings Article | 7 April 1999 Paper
Proc. SPIE. 3629, Photodetectors: Materials and Devices IV
KEYWORDS: Ultraviolet radiation, Aluminum, Sensors, Photodiodes, Photodetectors, Silicon, Solar radiation, Photoresistors, Gallium nitride, Ultraviolet detectors

Proceedings Article | 1 February 1991 Paper
Proc. SPIE. 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
KEYWORDS: Tin, Electrons, Gallium arsenide, Optoelectronic devices, Doping, Chemical species, Aluminum, Physics, Semiconductors, Spectroscopy

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