In this work we present the investigations aimed at the optimization of the technology of Reactive Ion Etching in sulfur hexafluoride (SF6) plasma of silicon, which is necessary during fabrication of TFET according to the original concept of the device designed at Institute of Microelectronics and Optoelectronics (IMiO) of Warsaw University of Technology (WUT) laboratory. We have performed a two-stage optimization of RIE process’ parameters in order to obtain a controllable process characterized by good selectivity and anisotropy. Presented in this study findings have shown that the SF6 flow most significantly influence onto the RIE process’ results. Selected and optimized processing step will be used in the course of the fabrication of TFET devices, in future.
The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET’s construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.
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