In order to study the effect of ionizing radiation damage on the performance of silicon single photon avalanche diode (SPAD) in space radiation environment, the γ irradiation of SPAD were carried out under different conditions, and the changes of radiation sensitive parameters such as leakage current, dark count rate (DCR), 1/f noise of the SPAD were analyzed. The results show that the leakage current of the SPAD after 50krad(Si) irradiation under zero bias has not significantly changed, but the dark current has increased by a factor of one thousand under operating bias. After the total ionizing dose (TID) of 70krad(Si) γ irradiation, the DCR increased 6600cps under zero bias, but the number is 10100cps under operating bias. The 1/f noise shows that the number of oxide traps and interface traps generated by gamma ionization radiation enhances the fluctuation in carrier numbers, leading to an increase of 1/f noise. The 1/f noise can be reduced by 100°C annealing after 24h, but it cannot be restored to the level of fresh SPAD.
TID(total dose effect) and HCI(hot carrier injection) are hot issues of space application devices research in recent years. Previous studies drew the conclusion that TID radiation harden process can restrain HCI effectively. However, there have few reliability studies on radiation hardened device reported. In this article, the author irradiates RH T-Gate PD SOI NMOS and conduct a hot carrier experiment afterwards. He makes a detailed analysis of RH devices’ hot carrier reliability in different structure and reach a conclusion that radiation-induced HCI enhancement effect still exists in RH SOI experienced TID radiation because of the presence of buried oxide, which is contrary to results of previous studies on bulk silicon devices.
InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x1013 protons/cm2. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.
We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.
Star sensor is an essential component of spacecraft attitude control system. Spatial radiation can cause star sensor performance degradation, abnormal work, attitude measurement accuracy and reliability reduction. Many studies have already been dedicated to the radiation effect on Charge-Coupled Device(CCD) image sensor, but fewer studies focus on the radiation effect of star sensor. The innovation of this paper is to study the radiation effects from the device level to the system level. The influence of the degradation of CCD image sensor radiation sensitive parameters on the performance parameters of star sensor is studied in this paper. The correlation among the radiation effect of proton, the non-uniformity noise of CCD image sensor and the performance parameter of star sensor is analyzed. This paper establishes a foundation for the study of error prediction and correction technology of star sensor on-orbit attitude measurement, and provides some theoretical basis for the design of high performance star sensor.
The radiation effects of protons will lead to degradation of dark signal of CCD. The degradation mechanism of dark signals of CCD are different due to the different proton energy. This paper investigated the radiation effects and annealing effects of CCD exposed to 3MeV and 10MeV proton. The test result shown that 3MeV proton irradiation induced CCD’s dark signal decreasing linearly following the proton fluence. The dark signal degradation induced by 10MeV was not linearly, due to the different defects introduced by proton with different energy. The results above indicates that the displacement damage behavior of defects introduced by 10MeV proton is more complex than 3MeV proton. There are more than two kinds of displacement damage defects dominating the increase of the dark signal. The results of this paper provided important reference for CCD’s proton radiation test method and evaluation technology.
Total ionizing dose effect is a major threat to space applications of CCD, which leads to the decrease of CCD saturation output voltage and the increase of dark signal. This paper investigated CCD and its readout circuit for experimental samples of different channel width to length ratio of MOSFET, and readout circuit amplifier, and CCD. The irradiation source was 60Co- gamma ray. through testing the parameters degradation of MOSFET and amplifier degradation, the generation and annealing law of irradiation induced defects in MOS single tube are analyzed. Combined with the radiation effect of amplifier and CCD, The correlation of radiation damage of the MOSFET and the readout circuit amplifier and CCD parameter degradation is established. Finally, this paper reveals the physical mechanism of ionizing radiation damage of the readout circuit. The research results provide a scientific basis for the selection of anti-radiation technology and structure optimization of domestic CCD.
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