PROCEEDINGS ARTICLE | March 15, 2016
Proc. SPIE. 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII
KEYWORDS: Fabrication, Metamaterials, Plasmonics, Light emitting diodes, Indium arsenide, Copper, Gallium arsenide, Silicon, Atomic force microscopy, Quantum dots, Semiconductor lasers, Transmission electron microscopy, Laser damage threshold, Silicon photonics, Pulsed laser operation, Molecular beam epitaxy, Hybrid silicon lasers
We report on high quality GaAs-on-Si layers with low threading dislocations obtained by a combination of nucleation layer and dislocation filter layers using the molecular beam epitaxy (MBE) growth method. As a result, we achieved a Si-based electrically pumped 1.3 μm InAs/GaAs quantum dot (QD) laser that lases up to 111°C with a lasing threshold of 200 A/cm2, and a single facet output power exceeding 100 mW at room temperature. In addition to Si-based lasers, we also demonstrated the first Si-based InAs/GaAs QD superluminescent light-emitting diode (SLD), from which a close-to-Gaussian emission with a full width at half maximum (FWHM) of ~114 nm centered at ~1258 nm and maximum output power of 2.6 mW has been achieved.
