Memristors were vertically integrated with CMOS circuits using nanoimprint lithography (NIL), making a transistor/memeristor hybrid circuit. Several planarization technologies were developed for the CMOS substrates to meet the surface planarity requirement for NIL. Accordingly, different integration schemes were developed and optimized. UV-curable NIL (UV-NIL) using a double layer spin-on resists was carried out to pattern the electrodes for memristors. This is the first demonstration of NIL on active CMOS substrates that are fabricated in a CMOS fab. Our work demonstrates that NIL is compatible with commercial IC fabrication process. It was also demonstrated that the memristors are integratable with traditional CMOS to make hybrid circuits without changing the current infrastructure in IC industry.
Both ultrafast thermal and photocurable nanoimprint lithography (NIL) are studied and high fidelity transfers of nanopatterns from molds to resists have been achieved. In ultrafast thermal NIL, we use a single excimer laser pulse to melt a NIL resist polymer and imprint it using a fused silica mold. The entire imprint process, from melting the polymer to completion of the imprint, takes less than 200 ns. This technique, termed laser assisted nanoimprint lithography (LAN), has patterned nanostructures in various polymer films with high fidelity over the entire mold area. In LAN, the short laser pulse is absorbed primarily by the resist and the laser energy is minute, hence substrate heating and distortion are negligible. In ultrafast photocurable NIL, a flash lamp (pulse width 94 μs) is used to crosslink photo curable resists over a 4 in. wafer with high uniformity by a single pulse. The significant reduction of the heating of the substrate and mold will greatly benefit overlay alignment.