Nowadays, low temperature polycrystalline silicon thin film transistor (poly-Si TFT) has been the most popular
subject in active matrix liquid display (AMLCD) and active matrix organic light emitting display (AMOLED). Relative
to the other crystallization technique, aluminum-induced crystallization have certain advantages in lower temperature,
and of course, lower cost than any other methods. This paper gives a research on the performance of poly-Si thin film
fabricated by aluminum-induced electric field enhancing lateral crystallization at low temperature (<600°C). Raman
spectra, X-ray diffraction and scan electron microscope were used to analyze the crystallization state, crystal structure
and surface morphology of the poly-Si thin film. Results show that the poly-Si thin film has good crystallinity, and the
electric field has the effect of enhancing the crystallization when direct current electric voltage is added to the film
during annealing. In addition to this, the metal aluminum induced crystallization was monitored in the whole progress
when Al was diffusing into the a-Si thin film by measuring resistance of crystallizing thin film. The poly-Si thin film
fabricated by this low temperature electric enhancing aluminum-induced crystallization technique was obtained. The
results show that it is suitable for P-Si TFTs which is widely used in AMLCD and AMOLED.
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