Proc. SPIE. 9782, Advanced Etch Technology for Nanopatterning V
KEYWORDS: Signal to noise ratio, Lithography, Optical lithography, Statistical analysis, Etching, Scanning electron microscopy, Line width roughness, Line edge roughness, Stochastic processes, Edge roughness
Self-Aligned Quadruple Patterning (SAQP) is targeted to support the sub 10nm technology nodes. It is consisted of several process steps starting with lithography and Etch to define the pattern backbone. Followed by additional set of processes based on thin-films deposition and etch that quadruple the number of patterns, shrinking pattern and pitch sizes.
Pattern roughness is derived from the physical and chemical characteristics of these process steps. It is changing with each of the SAQP process steps, based on material stack and the etch process characteristics. Relative to a sub 10 nm pattern sizes pattern, edge roughness can significantly impact pattern physical dimensions. Unless controlled it can increase the variability of device electrical performance, and reduce yield.
In this paper we present the SAQP process steps and roughness characterization, performed with Power Spectral Density (PSD) methodology. Experimental results demonstrates the ability of PSD analysis to sensitively reflect detailed characterization of process roughness, guiding process development improvements, and enabling roughness monitoring for production.