Excimer laser in condition of high voltage, large current and fast discharge will produce strong electromagnetic pulse radiation and electromagnetic interference on the around electrical equipment. The research on characteristics and distribution of excimer laser electromagnetic radiation could provide important basis for electromagnetic shielding and suppressing electromagnetic interference, and further improving the electromagnetic compatibility of system. Firstly, electromagnetic radiation source is analyzed according to the working principle of excimer laser. The key test points of the electromagnetic radiation, hydrogen thyratron, main discharge circuit and laser outlet, are determined by the mechanical structure and the theory of electromagnetic radiation. Secondly, characteristics of electromagnetic field were tested using a near field probe on the key positions of the vertical direction at 20, 50, and 80 cm, respectively. The main radiation frequencies and the radiation field characteristics in the near field are obtained. The experimental results show that the main radiation frequencies distribute in 47, 65, and 130 MHz for electric field and the main radiation frequencies distribute in 34, 100, and 165 MHz for magnetic field. The intensity of electromagnetic field decreases rapidly with the increase of test distance. The higher the frequency increases, the faster the amplitude attenuate. Finally, several electromagnetic interference suppression measurement methods are proposed from the perspective of electromagnetic compatibility according to the test results.
The damages of TEA-CO<sub>2</sub> laser to HgCdTe imaging sensor are researched experimentally and theoretically. The shadows, cracks and dark line are observed. There is a gap between photosensitive layer and CdZnTe which decreases light transmittance, so that the shadows occur. It shows that the crack damages begin from photosensitive layer. The sensor is irradiated by pulse laser, the absorptivity of photosensitive layer is strong, sharp temperatures fluctuations inside the sensor, leading to stress. With the stress increased, the cracks are observed on the surface of the detector. Cracked the surface of the substrate, and effective transmission reduced, which caused gray pixel response decline. The dark line in image occurs several times because Hg atoms separate out from the detector and gather together at the Si-COMS which makes a short circuit between silicon substrate and signal choice line. The volatility of Hg makes the short circuit is unstable, resulting in the dark line repeated in the output image, but the short circuit occurs by chance.