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Rakhi Narang
at Univ of Delhi
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Publications (1)
Proceedings Article | 15 October 2012
An Analytical Modeling Approach for a Gate All Around (GAA) Tunnel Field Effect Transistor (TFET)
Proc. SPIE. 8549, 16th International Workshop on Physics of Semiconductor Devices
KEYWORDS: Gallium arsenide, Doping, Computer simulations, 3D modeling, Field effect transistors, Analytical research, 3D equipment, Computer architecture, Statistical modeling, Instrument modeling
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