Mr. Rama Shanker Yadav Profile

Rama Shanker Yadav

at Barkatullah Univ

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Proceedings Article | 30 December 2016 Paper

Modulation of magnetic interaction in Bismuth ferrite through strain and spin cycloid engineering

Rama Shanker Yadav, Hilal Ahmad Reshi, Shreeja Pillai, D. Rana, Vilas Shelke

Proceedings Volume 10224, 102240A (2016) https://doi.org/10.1117/12.2267059

KEYWORDS: Magnetism, Ferroelectric materials, Modulation, Lanthanum, Thin films, Aluminum, Raman spectroscopy, Distortion, Bismuth, Iron

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Bismuth ferrite, a widely studied room temperature multiferroic, provides new horizons of multifunctional behavior in phase transited bulk and thin film forms. Bismuth ferrite thin films were deposited on lattice mismatched LaAlO₃ substrate using pulsed laser deposition technique. X-ray diffraction confirmed nearly tetragonal (T-type) phase of thin film involving role of substrate induced strain. The film thickness of 56 nm was determined by X-ray reflectivity measurement. The perfect coherence and epitaxial nature of T- type film was observed through reciprocal space mapping. The room temperature Raman measurement of T-type bismuth ferrite thin film also verified phase transition with appearance of only few modes. In parallel, concomitant La and Al substituted Bi_1-xLa_xFe_0.95Al_0.05O₃ (x = 0.1, 0.2, 0.3) bulk samples were synthesized using solid state reaction method. A structural phase transition into orthorhombic (Pnma) phase at x = 0.3 was observed. The structural distortion at x = 0.1, 0.2 and phase transition at x = 0.3 substituted samples were also confirmed by changes in Raman active modes. The remnant magnetization moment of 0.199 emu/gm and 0.28 emu/gm were observed for x = 0.2 and 0.3 bulk sample respectively. The T-type bismuth ferrite thin film also showed high remnant magnetization of around 20emu/cc. The parallelism in magnetic behavior between T-type thin film and concomitant La and Al substituted bulk samples is indication of modulation, frustration and break in continuity of spiral spin cycloid.

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