IONiSE is a Monte Carlo simulation which describes the interactions of 5-50 keV energy He+ ions with solids, and
predicts the production of ion induced secondary electron (iSE) emission. Its use to determine the most probable implant
depth, the maximum ion range, and the effect of straggle are presented. IONiSE has been used to numerically fit
literature tabulations of iSE generation from five elements so as to derive excitation energy and mean free path
parameters. By employing those parameters in IONiSE the topographic yield variation for iSE as a function of energy
and the atomic number of the target has been predicted, and estimates of the individual secondary electron contributions
from the incident and backscattered ions have been made. These simulations help to create a foundation for the
application and the interpretation of iSE images for metrology.