A cost-effective method, using reactive ion etch (RIE) process to etch Si with Ag nanoparticle mask for fabricating
antireflection structure, is proposed. The formation of Ag nanoparticle adopts wet-chemical method to deposit Ag layer
on Si substrate, and then through rapid thermal annealing of Ag at 200°C-600°Crange, Ag nanoparticle were formed on
Si substrate. Effects of parameters including etching parameters and deposited factors were investigated. According to
analysis result of experiment, a group of high performance antireflection structure parameters was obtained.