We report on the simulation of cavity-dumped semiconductor disk lasers utilizing an intracavity Pockels cell. This technique is used to generate high peak power pulses with pulse lengths of nominally one cavity round-trip. These results are compared to experiments demonstrated using InGaAs quantum-well gain region operating at approximately 1 μm to generate micro-Joule level nanosecond pulses.
The modal characteristics of nonresonant five-element phase-locked arrays of 4.7-μm emitting quantum cascade lasers (QCLs) have been studied using spectrally resolved near- and far-field measurements and correlated with results of device simulation. Devices are fabricated by a two-step metal-organic chemical vapor deposition process and operate predominantly in an in-phase array mode near threshold, although become multimode at higher drive levels. The wide spectral bandwidth of the QCL’s core region is found to be a factor in promoting multispatial-mode operation at high drive levels above threshold. An optimized resonant-array design is identified to allow sole in-phase array-mode operation to high drive levels above threshold, and indicates that for phase-locked laser arrays full spatial coherence to high output powers does not require full temporal coherence.
In recent years, infrared plasmonics has turned towards materials that are wavelength and application tailorable, and which are geared towards CMOS processing. The transparent conductive oxides are very favorable towards infrared plasmonic applications for a number of reasons, one of which being the natural visible transparency due to their relatively large bandgap. Fluorine-doped tin oxide (FTO) is one such transparent and doping-tunable material that in addition is low cost due to spray deposition techniques that result in perfectly conformal coatings. In this work, a deposition recipe that gives high free carrier concentration was used to fabricate structures for demonstration of surface plasmon excitation. 1D gratings with a range of structural parameters were etched in silicon. Then the gratings were conformally coated with FTO by aqueous spray deposition. Excitation of surface plasmon polaritons (SPP) at mid- and long- wave infrared wavelengths on these gratings was demonstrated. The observed (SPP) excitation resonances agree will with analytical excitation calculations and numerical simulations. We show that grating heights of ~10-15% of the wavelength are optimum for achieving the strongest sharpest coupling to plasmonic resonances in the mid- and longwave infrared. The presented results are compared with similar etched silicon gratings coated with Ga-doped ZnO (GZO). The dominant difference between our FTO and GZO measurements is the free carrier concentration. The useful wavelength range is predicted for FTO based plasmonics and compared with other plasmonic host materials. The work presented here could play a key role in novel decreased-cost detectors, filters, and on-chip optoelectronics.
The history of semiconductor quantum optics group in the College of Optical Sciences will be discussed. The work from planar microcavities including VCSELs, photonic crystal cavities leading to the observation of strong-coupling between an L3 cavity and a quantum dot, and now metallic cavities coupled to quantum wells and quantum dots will be described.