Dr. Robert D. Allen Profile

Dr. Robert D. Allen

Research Scientist at IBM Research - Almaden

SPIE Involvement:

Author

Publications (58)

Proceedings Article | 9 October 2018 Presentation + Paper

Designing adhesives for cooled infrared detectors

Joseph Dennis, Esin Akca, Andy Tek, Gökhan Demirci, Alp Tolunguc, Eyup Can Baloglu, Thomas Antoni, Cagla Ozgit-Akgun, Robert Allen

Proceedings Volume 10795, 1079506 (2018) https://doi.org/10.1117/12.2325779

KEYWORDS: Epoxies, Adhesives, Infrared detectors, Sensors, Staring arrays, Cryogenics, Readout integrated circuits, Microelectronics, Capillaries, Liquids

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Proceedings Article | 28 March 2014 Paper

Closed-loop high-speed 3D thermal probe nanolithography

A. Knoll, M. Zientek, L. Cheong, C. Rawlings, P. Paul, F. Holzner, J. Hedrick, D. Coady, R. Allen, U. Dürig

Proceedings Volume 9049, 90490B (2014) https://doi.org/10.1117/12.2046201

KEYWORDS: Optical lithography, Polymers, Lithography, Silicon, Scanning probe lithography, Image resolution, Molecules, Nanolithography, Scanning electron microscopy, Photomasks

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Thermal Scanning Probe Lithography (tSPL) is an AFM based patterning technique, which uses heated tips to locally evaporate organic resists such as molecular glasses [1] or thermally sensitive polymers.[2][3] Organic resists offer the versatility of the lithography process known from the CMOS environment and simultaneously ensure a highly stable and low wear tip-sample contact due to the soft nature of the resists. Patterning quality is excellent up to a resolution of sub 15 nm,[1] at linear speeds of up to 20 mm/s and pixel rates of up to 500 kHz.[4] The patterning depth is proportional to the applied force which allows for the creation of 3-D profiles in a single patterning run.[2] In addition, non-destructive imaging can be done at pixel rates of more than 500 kHz.[4] If the thermal stimulus for writing the pattern is switched off the same tip can be used to record the written topography with Angstrom depth resolution. We utilize this unique feature of SPL to implement an efficient control system for reliable patterning at high speed and high resolution. We combine the writing and imaging process in a single raster scan of the surface. In this closed loop lithography (CLL) approach, we use the acquired data to optimize the writing parameters on the fly. Excellent control is in particular important for an accurate reproduction of complex 3D patterns. These novel patterning capabilities are equally important for a high quality transfer of two-dimensional patterns into the underlying substrate. We utilize an only 3-4 nm thick SiOx hardmask to amplify the 8±0.5 nm deep patterns created by tSPL into a 50 nm thick transfer polymer. The structures in the transfer polymer can be used to create metallic lines by a lift-off process or to further process the pattern into the substrate. Here we demonstrate the fabrication of 27 nm wide lines and trenches 60 nm deep into the Silicon substrate.[5] In addition, the combined read and write approach ensures that the lateral offset between read and write field is minimized. Thus we achieve high precision in marker-less stitching of patterning fields. A 2D cross-correlation technique is used to determine the offset of a neighboring patterning field relative to a previously written field with an accuracy of about 1 nm. We demonstrate stitching of 1 μm2 fields with ~5 nm accuracy and stitching of larger 10x10 μm2 fields with 10 nm accuracy.[6]

Proceedings Article | 16 April 2011 Paper

Extending photo-patternable low-κ concept to 193nm lithography and e-beam lithography

Qinghuang Lin, A. Nelson, L. Bozano, P. Brock, S. Cohen, B. Davis, R. Kwong, E. Liniger, D. Neumayer, J. Rathore, H. Shobha, R. Sooriyakumaran, S. Purushothaman, R. Miller, R. Allen, T. Spooner, R. Wisnieff

Proceedings Volume 7972, 79721A (2011) https://doi.org/10.1117/12.881571

KEYWORDS: Dielectrics, Electron beam lithography, Lithography, Photomasks, Silicon, Scanning electron microscopy, Scanners, Copper, Back end of line, Optical lithography

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Proceedings Article | 16 April 2011 Paper

Bound PAG resists: an EUV and electron beam lithography performance comparison of fluoropolymers

Luisa Bozano, Phillip Brock, Hoa Truong, Martha Sanchez, Gregory Wallraff, William Hinsberg, Robert Allen, Masaki Fujiwara, Kazuhiko Maeda

Proceedings Volume 7972, 797218 (2011) https://doi.org/10.1117/12.884519

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Electron beam lithography, Lithography, Spectroscopy, Line edge roughness, Image resolution, Glasses, Atomic force microscopy

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Proceedings Article | 26 March 2010 Paper

Multilevel integration of patternable low-κ material into advanced Cu BEOL

Qinghuang Lin, S. Chen, A. Nelson, P. Brock, S. Cohen, B. Davis, N. Fuller, R. Kaplan, R. Kwong, E. Liniger, D. Neumayer, J. Patel, H. Shobha, R. Sooriyakumaran, S. Purushothaman, T. Spooner, R. Miller, R. Allen, R. Wisnieff

Proceedings Volume 7639, 76390J (2010) https://doi.org/10.1117/12.851225

KEYWORDS: Back end of line, Copper, Dielectrics, Optical lithography, Scanning electron microscopy, Silicon, Manufacturing, Semiconducting wafers, Ultraviolet radiation, Polymers

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Proceedings Article | 26 March 2010 Paper

A silicon-containing resist for immersion lithography

Ratnam Sooriyakumaran, Wu-Song Huang, Sally Swanson, Hoa Truong, Phillip Brock, Alexander Friz, Kuang-Jung Chen, Robert Allen

Proceedings Volume 7639, 76390F (2010) https://doi.org/10.1117/12.846280

KEYWORDS: Silicon, Polymers, Immersion lithography, Etching, Lithography, Photoresist materials, Reactive ion etching, Anisotropic etching, Silicon films, Multilayers

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Proceedings Article | 15 April 2008 Paper

A new class of low bake resists for 193-nm immersion lithography

Ratnam Sooriyakumaran, Richard DiPietro, Hoa Truong, Phillip Brock, Robert Allen, Luisa Bozano, Irene Popova, Wu-Song Huang, Rex Chen, Mahmoud Khojasteh, Pushkara Rao Varanasi

Proceedings Volume 6923, 69230C (2008) https://doi.org/10.1117/12.772947

KEYWORDS: Polymers, Immersion lithography, Diffusion, Image processing, 193nm lithography, Lithography, Chemically amplified resists, Humidity, Photoresist processing, Standards development

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Proceedings Article | 4 April 2008 Paper

Self-segregating materials for immersion lithography

Daniel Sanders, Linda Sundberg, Phillip Brock, Hiroshi Ito, Hoa Truong, Robert Allen, Gregory McIntyre, Dario Goldfarb

Proceedings Volume 6923, 692309 (2008) https://doi.org/10.1117/12.772937

KEYWORDS: Polymers, Water, Immersion lithography, Photoresist materials, Lithography, Natural surfaces, Interfaces, Semiconducting wafers, Optical properties, Fluorine

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Proceedings Article | 26 March 2008 Paper

The limitations of high-index resists for 193-nm hyper-NA lithography

Gregory McIntyre, Daniel Sanders, Ratnam Sooriyakumaran, Hoa Truong, Robert Allen

Proceedings Volume 6923, 692304 (2008) https://doi.org/10.1117/12.773114

KEYWORDS: Absorption, Refractive index, Water, Lithography, Polarization, Refraction, Chemistry, Critical dimension metrology, Sodium, Reflection

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Proceedings Article | 26 March 2008 Paper

Graded spin-on organic bottom antireflective coating for high NA lithography

Dario Goldfarb, Sean Burns, Libor Vyklicky, Dirk Pfeiffer, Anthony Lisi, Karen Petrillo, John Arnold, Daniel Sanders, Aleksandra Clancy, Robert Lang, Robert Allen, David Medeiros, Dah Chung Owe-Yang, Kazumi Noda, Seiichiro Tachibana, Shozo Shirai

Proceedings Volume 6923, 69230V (2008) https://doi.org/10.1117/12.772268

KEYWORDS: Reflectivity, Polymers, Photoresist materials, Silicon, Etching, Lithography, Optical lithography, Interfaces, Multilayers, Semiconducting wafers

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Proceedings Article | 2 April 2007 Paper

Fluoro-alcohol materials with tailored interfacial properties for immersion lithography

Daniel Sanders, Linda Sundberg, Ratnam Sooriyakumaran, Phillip Brock, Richard DiPietro, Hoa Truong, Dolores Miller, Margaret Lawson, Robert Allen

Proceedings Volume 6519, 651904 (2007) https://doi.org/10.1117/12.712768

KEYWORDS: Fluorine, Polymers, Immersion lithography, Lithography, Interfaces, Semiconducting wafers, Carbon, Water, Surface properties, Hydrogen

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Proceedings Article | 2 April 2007 Paper

Contact angles and structure/surface property relationships of immersion materials

Linda Sundberg, Daniel Sanders, Ratnam Sooriyakumaran, Phillip Brock, Robert Allen

Proceedings Volume 6519, 65191Q (2007) https://doi.org/10.1117/12.712632

KEYWORDS: Fluorine, Polymers, Immersion lithography, Surface properties, Semiconducting wafers, Polymer thin films, Lithography, Carbon, Silicon, Quartz

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Proceedings Article | 22 March 2007 Paper

Impact of curing kinetics and materials properties on imprint characteristics of resists for UV nano-imprint lithography

Frances Houle, Ann Fornof, Ratnam Sooriyakumaran, Hoa Truong, Dolores Miller, Martha Sanchez, Blake Davis, Teddie Magbitang, Robert Allen, Mark Hart, Geraud Dubois

Proceedings Volume 6519, 65191C (2007) https://doi.org/10.1117/12.712298

KEYWORDS: Ultraviolet radiation, Fluorine, Polymers, Glasses, Silicon, Polymerization, Data conversion, Scanning electron microscopy, Dielectrics, Materials processing

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Proceedings Article | 4 May 2005 Paper

193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers

Pushkara Varanasi, Ranee Kwong, Mahmoud Khojasteh, Kaushal Patel, Kuang-Jung Chen, Wenjie Li, M. Lawson, Robert Allen, Ratnam Sooriyakumaran, P. Brock, Linda Sundberg, Mark Slezak, Gary Dabbagh, Z. Liu, Yukio Nishimura, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599700

KEYWORDS: Polymers, 193nm lithography, Lithography, Etching, Photoresist materials, Fluorine, Immersion lithography, Modulation, Photomasks, Reactive ion etching

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Proceedings Article | 4 May 2005 Paper

Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)

Ratnam Sooriyakumaran, Hoa Truong, Linda Sundberg, Mark Morris, Bill Hinsberg, Hiroshi Ito, Robert Allen, Wu-Song Huang, Dario Goldfarb, Sean Burns, Dirk Pfeiffer

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600615

KEYWORDS: Silicon, Line edge roughness, Polymers, Glasses, Standards development, Diffusion, Lithography, Spectroscopy, Macromolecules, Chemically amplified resists

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Proceedings Article | 4 May 2005 Paper

Evaluation of functional properties of imaging materials for water immersion lithography

William Hinsberg, J. Hoffnagle, G. Wallraff, C. Larson, F. Houle, Linda Sundberg, Hoa Truong, Blake Davis, Robert Allen

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600560

KEYWORDS: Lithography, Water, Polymers, Liquids, Contamination, Reflectivity, Interferometry, Immersion lithography, Semiconducting wafers, Chemical analysis

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Proceedings Article | 14 May 2004 Paper

193-nm negative resist based on acid-catalyzed elimination of polar molecules

Ratnam Sooriyakumaran, Blake Davis, Carl Larson, Phillip Brock, Richard DiPietro, Thomas Wallow, Eric Connor, Linda Sundberg, Gregory Breyta, Robert Allen, Kaushal Patel, Pushkara Rao Varanasi

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536432

KEYWORDS: Polymers, Molecules, Switches, Standards development, Distortion, Photoresist materials, Lithography, Spectroscopy, Photomasks, Photoresist developing

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Proceedings Article | 12 June 2003 Paper

Impact of thin resist processes on post-etch LER

Arpan Mahorowala, Dario Goldfarb, Karen Temple, Karen Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg Gallatin, Stacy Rasgon, Herbert Sawin, Scott Allen, Robert Lang, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Varanasi, Martha Sanchez, Hiroshi Ito, Gregory Wallraff, Robert Allen

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485168

KEYWORDS: Etching, Oxides, Scanning electron microscopy, Line edge roughness, Atomic force microscopy, Polymers, Plasma, Plasma etching, Chemistry, Photoresist processing

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Proceedings Article | 12 June 2003 Paper

Rational design in cyclic olefin resists for sub-100-nm lithography

Wenjie Li, Pushkara Varanasi, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Hiroshi Ito, Hoa Truong, Robert Allen, Masafumi Yamamoto, Eiichi Kobayashi, Mark Slezak

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485100

KEYWORDS: Polymers, Etching, Lithography, Resistance, Fluorine, Surface roughness, Dry etching, Semiconducting wafers, 193nm lithography, Polymer thin films

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Proceedings Article | 24 July 2002 Paper

Evolution of a 193-nm bilayer resist for manufacturing

Ranee Kwong, Mahmoud Khojasteh, Margaret Lawson, Timothy Hughes, Pushkara Varanasi, William Brunsvold, Robert Allen, Phillip Brock, Ratnam Sooriyakumaran, Hoa Truong, Arpan Mahorowala, David Medeiros

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474239

KEYWORDS: Silicon, Etching, Polymers, Lithography, Reactive ion etching, 193nm lithography, Photomasks, Manufacturing, Absorbance, Resistance

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Proceedings Article | 24 July 2002 Paper

Aliphatic platforms for the design of 157-nm chemically amplified resists

Hiroshi Ito, Hoa Truong, Masaki Okazaki, Dolores Miller, Nicolette Fender, Gregory Breyta, Phillip Brock, Gregory Wallraff, Carl Larson, Robert Allen

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474223

KEYWORDS: Polymers, Lithography, Data modeling, Polymerization, Fluorine, Spectroscopy, Chemically amplified resists, Absorbance, Photomasks, Systems modeling

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