Comparative study between REAP 200 and FEP171 CAR with 50 kV raster e-beam system for sub-100-nm technology
REAP (raster e-beam advanced process) using 50-kV raster e-beam system for sub-100-nm node mask technology
Optimization of lithography and CD control using GHOST proximity correction with a MEBES 4500 system
Further work in optimizing PBS: is it capable of meeting specifications for 256 Mbit DRAM reticle manufacturing?
Process optimization of positive novolac resists for electron-beam lithography resist characterization using single or multiple development steps with either a sodium-hydroxide or metal ion-free dev
Proximity effect correction on MEBES for 1x mask fabrication: lithography issues and tradeoffs at 0.25 micron