The most widely used pixel architecture is a passive pixel sensor (PPS) where the pixel consists of a detector and an a-Si:H thin-film transistor readout switch. While the PPS has the advantage of being compact and amenable towards high-resolution imaging, the data line capacitance, resistance, and the column charge amplifiers add a large noise component to the PPS that reduces the minimum readable sensor input signal. Building upon previous research into active pixel sensor (APS) based amplified pixel readout circuits, this work investiates a current-mediated APS (C-APS) x-ray detection array for diagnostic medical imaging applications. Preliminary tests indicate linear performance, and a programmable circuits gain via choice of supply voltage and sampling time. In addition, the performance of C-APS amplified pixels is measured from both, a-Si TFT metastability and noise performance perspectives. Theory and measurements indicate that the C-APS pixel architecture is promising for diagnostic medical imaging modalities including low noise, real-time fluoroscopy.
We report measurements of conductance noise of a-Si<sub>1-x</sub>Ge<sub>x</sub>:H in two different geometries; one where the current flow is transverse to the surface and the other longitudinal to it. Because of the large increase in sample resistance in going from transverse to longitudinal conduction, it was not possible to measure both geometries at the same temperature. However, the temperature trends are compatible with a common noise source. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by a factor of 50 over that found in a-Si:H.