Dr. Robert A. Jones Profile

Dr. Robert A. Jones

Researcher at L3Harris Technologies Inc

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Author

Publications (7)

Proceedings Article | 15 June 2023 Presentation

Advancements in strained layer superlattice-based infrared focal plane arrays at L3Harris

Robert Jones, Steven Allen, Daniel Chmielewski, Kedar Manandhar, Rudy Fink, Biswanath Roy, Daniel Jardine, Nansheng Tang, Loucas Tsakalakos, Lee Elizondo

Proceedings Volume 12534, 125340G (2023) https://doi.org/10.1117/12.2663921

KEYWORDS: Sensors, Superlattices, Staring arrays, Infrared radiation, Infrared sensors, Defense technologies, Sensor technology, Semiconducting wafers, On-screen displays, Mid-IR

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Proceedings Article | 15 June 2023 Presentation

Advancements in large format small pitch SLS infrared focal plane arrays at L3Harris

Robert Jones, Steven Allen, Thomas Morthorst, Joseph Devine, Derek Caudill, Eric Lohrer, Phillip Henry, Michael Spicer, Jon Blevins, Loucas Tsakalakos

Proceedings Volume 12534, 1253410 (2023) https://doi.org/10.1117/12.2663910

KEYWORDS: Staring arrays, Infrared imaging, Laser sintering, Infrared radiation, Sensors, Semiconducting wafers, Infrared sensors, Defense technologies, Yield improvement, Superlattices

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Proceedings Article | 13 June 2023 Presentation + Paper

Direct bonding of III-V detectors to silicon for infrared focal plane arrays

Steven Allen, Biswanath Roy, Joseph Meiners, Robert Jones, Darrel Endres, Yajun Wei, Mike Garter

Proceedings Volume 12534, 125340M (2023) https://doi.org/10.1117/12.2663782

KEYWORDS: Wafer bonding, Quantum efficiency, Staring arrays, Medium wave, Optical transmission, Long wavelength infrared

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Proceedings Article | 30 May 2022 Presentation

High operating temperature type II superlattice MWIR FPA technology

Lee Elizondo, Robert Jones, Steve Allen, Yajun Wei, Diane Beamer, Shelly Elizondo

Proceedings Volume 12107, 1210710 (2022) https://doi.org/10.1117/12.2622333

KEYWORDS: Superlattices, Staring arrays, Mid-IR

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Proceedings Article | 21 June 2018 Presentation + Paper

Transitioning large-diameter Type II Superlattice detector wafers to manufacturing

David Forrai, Robert Jones, Michael Garter, Yajun Wei, Steven Allen, Laura Couch

Proceedings Volume 10624, 106240L (2018) https://doi.org/10.1117/12.2311515

KEYWORDS: Sensors, Semiconducting wafers, Manufacturing, Superlattices, Infrared sensors, Sensor technology, Epitaxy, Heterojunctions, Staring arrays, Group III-V semiconductors

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The tri-service Vital Infrared Sensor Technology Acceleration (VISTA) program rapidly matured III-V semiconductor epitaxy to produce tactically viable detectors using Type II Superlattice (T2SL) structures. The T2SL material system allows tunable band gaps for creating lattice-matched heterojunction devices. Heterojunction devices are integral to suppressing sources of dark currents, such as internal Shockley Reed Hall (SRH) and device surface currents. Once the VISTA program demonstrated that T2SL detectors offered competitive performance to traditional indium antimonide (InSb) detectors at an operating temperature 40K to 50 K higher, many opportunities emerged. This elevation in operating temperature provides two benefits to infrared (IR) sensors. The first is to miniaturize the integrated Dewar-electronicscooler assembly (IDECA) such that it can support small aerial vehicle and soldier mounted sensors. The second is to increase the mean time to failure (MTTF) of an existing InSb IDECA. To benefit from T2SL higher operating temperature (HOT) detectors, the overall cost of the IDECA must be competitive with InSb. This drives a manufacturing capability that is equivalent to InSb. At the L3 Space and Sensors Technology Center (L3 SSTC), the III-V detector foundry processes 125 mm diameter InSb wafers. The development of 125 mm diameter T2SL detector wafers started with the gallium antimonide substrates. The greater size and weight of these substrates required extra care to avoid breakage. Leveraging the learning reported from the silicon industry, we developed a specification for the substrate thickness and edge bevel to provide a robust platform for wafer processing. Next, we worked with commercial III-V epitaxy suppliers to develop multi-wafer growth capability for 125 mm diameter substrates. The results of this effort, funded by the Office of the Secretary of Defense (OSD) Defense-wide Manufacturing Science and Technology (DMST) program through the Army Night Vision and Electronic Sensor Directorate (NVESD), we were able to improve focal plane array (FPA) yield from virtually zero to InSb manufacturing levels.

Proceedings Article | 21 January 2012 Paper

Electromagnetic design of resonator-QWIPs

K. K. Choi, M. Jhabvala, D. Forrai, A. Waczynaski, J. Sun, R. Jones

Proceedings Volume 8268, 82682O (2012) https://doi.org/10.1117/12.903605

KEYWORDS: Quantum efficiency, Sensors, Quantum well infrared photodetectors, Absorption, Data modeling, 3D modeling, Infrared radiation, Electromagnetism, Staring arrays, Diffraction gratings

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Proceedings Article | 21 May 2011 Paper

Electromagnetic modeling of QWIP FPA pixels

K. Choi, M. Jhabvala, D. Forrai, A. Waczynski, J. Sun, R. Jones

Proceedings Volume 8012, 80120R (2011) https://doi.org/10.1117/12.883456

KEYWORDS: Quantum efficiency, Sensors, Quantum well infrared photodetectors, Staring arrays, Antireflective coatings, Data modeling, 3D modeling, Resonators, Autoregressive models, Absorption

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