Dr. Roderick R. Kunz
Senior Staff Member at MIT Lincoln Lab
SPIE Involvement:
Symposium Committee | Conference Chair | Track Chair | Author | Instructor
Publications (47)

SPIE Journal Paper | August 28, 2013
OE Vol. 53 Issue 02
KEYWORDS: Photoacoustic spectroscopy, Signal detection, Acoustics, Signal to noise ratio, Gases, Absorption, Solids, Environmental sensing, Receivers, Gas lasers

Proc. SPIE. 6954, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing IX
KEYWORDS: Optical filters, Optical parametric oscillators, Explosives detection, Luminescence, Photons, Quantum efficiency, Solids, Explosives, Signal detection, Liquids

SPIE Journal Paper | July 1, 2005
JM3 Vol. 4 Issue 03
KEYWORDS: Polarization, Diodes, Charge-coupled devices, Imaging systems, Photodiodes, Imaging arrays, Photomicroscopy, Silicon, Computer aided design, Silica

Proc. SPIE. 5377, Optical Microlithography XVII
KEYWORDS: Lithography, Scattering, Water, Interfaces, Rayleigh scattering, Raman scattering, Immersion lithography, Semiconducting wafers, Scatter measurement, Liquids

Proc. SPIE. 5376, Advances in Resist Technology and Processing XXI
KEYWORDS: Lithography, Refractive index, Optical lithography, Contamination, Spectroscopy, Diffusion, Photoresist materials, Semiconducting wafers, Testing and analysis, Photoresist developing

Proc. SPIE. 5376, Advances in Resist Technology and Processing XXI
KEYWORDS: Electrodes, Water, Microscopy, Interfaces, Mercury, Chemistry, Platinum, Immersion lithography, Scanning probe microscopy, Antimony

Showing 5 of 47 publications
Conference Committee Involvement (7)
SPIE Advanced Lithography
12 February 2012 | San Jose, United States
SPIE Advanced Lithography
27 February 2011 | San Jose, United States
SPIE Advanced Lithography
22 February 2009 | San Jose, United States
SPIE Advanced Lithography
24 February 2008 | San Jose, United States
SPIE Advanced Lithography
25 February 2007 | San Jose, United States
Showing 5 of 7 published special sections
Course Instructor
SC355: Fundamentals of Photochemical Contamination Control for Lithographic Tools
This course is an overview of contamination control and discusses the issue of optical performance degradation as limited by the interaction of the actinic radiation with trace ambient vapors. This course draws from the UV/VUV space optics and lithography community. Means to test and identify incompatible materials, minimize the effects of contamination, and restore the performance of contaminated optics are covered.
SC120: 193-nm Photoresist Materials
This course reviews the present status of 193-nm photoresist technology at a time when it has seen successful production implementation and is moving into immersion technology. It describes the initial technical hurdles that had to be overcome to make 193 nm photoresists viable materials, describes the currently used platforms for dry lithography, and goes on to review the remaining issues still being resolved in the transition to immersion lithography with water and high refractive index liquids. The course will include a review of the status of the design and performance of 193 nm photoresists and processes for dry and immersion lithography. It will highlight the remaining issues that will need to be addressed for successful extension of 193 nm lithography, such as limitations of overlapping process windows, line edge roughness, PEB sensitivity, substrate interactions, dry etching capability, pattern collapse, and defectivity (dry and immersion), and the availability of materials required for extension beyond the 45 nm node. These topics will be discussed from both a mechanistic point of view as well as with respect to their impact on production implementation.
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