The ability to integrate nano-components onto MEMS devices in a controlled manner has been a limiting problem in interfacing micro-nano technologies, for the current methods of growing nano-structures/wires are inflexible and cannot be supported as a post-processing step for on-chip microelectronics. The main objective of this work is to selectively induce nucleation and further achieve crystal growth of silicon nano-structures/wires at specified sites without contaminating the outlining regions. A method utilizing a Q-switched, 532 nm, 10 Hz, Nd:YAG laser coupled to cantilevered NSOM fiber probes is proposed in this deposition experiment. A finite difference time domain simulation result is offered to illustrate the spatial confinement of the laser transmission field intensity emanating from the tip aperture. A vapor phase silane mixture (1% silane, 99% helium) was introduced into the vacuum chamber at pressures ranging from 200 to 440 Torr during the deposition experiments. The deposition and growth results for silicon nano-structure/wires on silicon substrates will be presented.