Dr. Ross Bringans Profile

Dr. Ross Bringans

VP & Director at PARC, part of SRI International

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 7 April 1998 Paper

Characterization of AlGaInN heterostructures and laser diodes

David Bour, Michael Kneissl, Noble Johnson, Linda Romano, Brent Krusor, Matt McCluskey, Werner Goetz, Ross Bringans

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304435

KEYWORDS: Semiconductor lasers, Quantum wells, Heterojunctions, Gallium nitride, Indium gallium nitride, Cladding, Magnesium, Nonimpact printing, X-ray diffraction, Light emitting diodes

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Proceedings Article | 10 January 1997 Paper

Visible laser diodes for printing

David Bour, Ross Bringans, Harlan Chung, David Treat, Werner Goetz, Daniel Hofstetter, Noble Johnson

Proceedings Volume 3000, (1997) https://doi.org/10.1117/12.263491

KEYWORDS: Quantum wells, Semiconductor lasers, Nonimpact printing, Light emitting diodes, Printing, Heterojunctions, Gallium nitride, Cladding, Indium gallium nitride, Optical pumping

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Proceedings Article | 12 April 1996 Paper

TE/TM cross-polarization laser diodes using tensile-strained quantum wells

Decai Sun, David Bour, K. Beernink, David Treat, Ross Bringans

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237646

KEYWORDS: Polarization, Quantum wells, Laser damage threshold, Gallium arsenide, Semiconductor lasers, Switching, Absorption, Laser applications, Infrared lasers, Infrared radiation

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Proceedings Article | 19 June 1995 Paper

Simple models for the threshold, efficiency, and polarization of AlGaInP red laser diodes

David Bour, K. Beernink, David Treat, Ross Bringans

Proceedings Volume 2399, (1995) https://doi.org/10.1117/12.212526

KEYWORDS: Quantum wells, Polarization, Quantum efficiency, Laser damage threshold, Semiconductor lasers, Data modeling, Diffusion, Transparency, Temperature metrology, Diodes

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Proceedings Article | 17 April 1995 Paper

AlGaInP single quantum well laser diodes

David Bour, David Treat, K. Beernink, Ross Bringans

Proceedings Volume 2380, (1995) https://doi.org/10.1117/12.206954

KEYWORDS: Quantum wells, Semiconductor lasers, Heterojunctions, Continuous wave operation, Laser damage threshold, Quantum efficiency, Cladding, Gallium arsenide, Vapor phase epitaxy, Pulsed laser operation

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Proceedings Article | 1 June 1994 Paper

High-power visible semiconductor lasers

Randall Geels, David Welch, David Bour, David Treat, Ross Bringans

Proceedings Volume 2115, (1994) https://doi.org/10.1117/12.172746

KEYWORDS: Semiconductor lasers, Quantum wells, Continuous wave operation, Visible radiation, High power lasers, Ultraviolet radiation, Broad area laser diodes, Laser damage threshold, Temperature metrology

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Proceedings Article | 26 June 1992 Paper

High power, 8.5 W cw, visible laser diodes

Randall Geels, David Welch, Tony Wang, Donald Scifres, David Bour, David Treat, Ross Bringans

Proceedings Volume 1634, (1992) https://doi.org/10.1117/12.59132

KEYWORDS: Semiconductor lasers, Continuous wave operation, Gallium arsenide, High power lasers, Quantum wells, Technologies and applications, Cladding, Quantum efficiency, Laser damage threshold, Visible radiation

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Showing 5 of 7 publications

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