Prof. Roxann L. Engelstad Profile

Prof. Roxann L. Engelstad

Professor and Chair at

SPIE Involvement:

Publications (104)

PROCEEDINGS ARTICLE | March 20, 2010

A study of reticle non-flatness induced image placement error contributions in EUV lithography

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Reticles, Data modeling, Electrodes, Particles, Distortion, Printing, Finite element methods, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

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SPIE Journal Paper | October 1, 2009

Analysis of Coulomb and Johnsen-Rahbek electrostatic chuck performance in the presence of particles for extreme ultraviolet lithography

Sogard, Michael , Mikkelson, Andrew , Ramaswamy, Vasu , Engelstad, Roxann

JM3 Vol. 8 Issue 04

KEYWORDS: Particles, Reticles, Extreme ultraviolet lithography, Photomasks, 3D modeling, Analytical research, Finite element methods, Extreme ultraviolet, Thin films, Dielectrics

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PROCEEDINGS ARTICLE | May 27, 2009

Mounting methodologies to measure EUV reticle nonflatness

Proc. SPIE. 7470, 25th European Mask and Lithography Conference

KEYWORDS: Lithography, Reticles, Interferometers, Photography, Interferometry, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Beam expanders, Computer aided design

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PROCEEDINGS ARTICLE | May 11, 2009

Evaluation of an e-beam correction strategy for compensation of EUVL mask non-flatness

Proc. SPIE. 7379, Photomask and Next-Generation Lithography Mask Technology XVI

KEYWORDS: Polishing, Scanners, Distortion, Finite element methods, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical alignment, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | March 18, 2009

Characterization of electrostatic chucks for extreme ultraviolet lithography

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Semiconductors, Reticles, Particles, Dielectrics, Photography, Fourier transforms, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Protactinium

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PROCEEDINGS ARTICLE | March 18, 2009

Analysis of Coulomb and Johnsen-Rahbek electrostatic chuck performance in the presence of particles for EUV lithography

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Thin films, Reticles, Particles, Dielectrics, 3D modeling, Finite element methods, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Analytical research

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PROCEEDINGS ARTICLE | May 2, 2008

Status of EUVL reticle chucking

Proc. SPIE. 6792, 24th European Mask and Lithography Conference

KEYWORDS: Mathematical modeling, Reticles, Data modeling, Photography, Interferometry, Control systems, 3D modeling, Image quality, Photomasks, Extreme ultraviolet lithography

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PROCEEDINGS ARTICLE | October 30, 2007

Measuring and characterizing the nonflatness of EUVL reticles and electrostatic chucks

Proc. SPIE. 6730, Photomask Technology 2007

KEYWORDS: Semiconductors, Reticles, Lithographic illumination, Mechanics, Interferometry, Kinematics, 3D modeling, Photomasks, Extreme ultraviolet lithography, Standards development

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PROCEEDINGS ARTICLE | October 24, 2007

Compensating for image placement errors induced during the fabrication and chucking of EUVL masks

Proc. SPIE. 6730, Photomask Technology 2007

KEYWORDS: Thin films, Electron beam lithography, Reticles, Etching, Interferometry, Distortion, 3D modeling, Photomasks, Extreme ultraviolet lithography, Surface finishing

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PROCEEDINGS ARTICLE | May 3, 2007

Predicting and correcting for image placement errors during the fabrication of EUVL masks

Proc. SPIE. 6533, 23rd European Mask and Lithography Conference

KEYWORDS: Thin films, Electron beam lithography, Multilayers, Reticles, Etching, Distortion, 3D modeling, Photomasks, Extreme ultraviolet lithography, Surface finishing

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PROCEEDINGS ARTICLE | March 15, 2007

Electrostatic chucking of EUVL reticles

Proc. SPIE. 6517, Emerging Lithographic Technologies XI

KEYWORDS: Reticles, Interferometers, Dielectrics, Photography, Coating, Interferometry, Finite element methods, Photomasks, Extreme ultraviolet lithography, Standards development

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PROCEEDINGS ARTICLE | October 20, 2006

Experimental verification of finite element model prediction of EUVL mask flatness during electrostatic chucking

Proc. SPIE. 6349, Photomask Technology 2006

KEYWORDS: Reticles, Data modeling, Interferometers, Particles, Photography, Finite element methods, Photomasks, Extreme ultraviolet lithography, Vibration isolation, Standards development

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PROCEEDINGS ARTICLE | October 20, 2006

Predicting the influence of trapped particles on EUVL reticle distortion during exposure chucking

Proc. SPIE. 6349, Photomask Technology 2006

KEYWORDS: Reticles, Data modeling, Glasses, Particles, Dielectrics, Distortion, Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Particle systems

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PROCEEDINGS ARTICLE | October 20, 2006

Measuring force uniformity in electrostatic chucking of EUVL masks

Proc. SPIE. 6349, Photomask Technology 2006

KEYWORDS: Data modeling, Particles, Dielectrics, Fourier transforms, Interferometry, Finite element methods, Photomasks, Extreme ultraviolet lithography, Analytical research, Semiconducting wafers

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PROCEEDINGS ARTICLE | June 21, 2006

Characterizing the response of an EUV reticle during electrostatic chucking

Proc. SPIE. 6281, 22nd European Mask and Lithography Conference

KEYWORDS: Reticles, Data modeling, Glasses, Particles, 3D modeling, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Zerodur, Thermal modeling

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PROCEEDINGS ARTICLE | March 23, 2006

Assessment of electron projection lithography mask membrane image placement accuracy due to fabrication processes

Proc. SPIE. 6151, Emerging Lithographic Technologies X

KEYWORDS: Electron beam lithography, Metrology, Etching, Image processing, 3D modeling, Photomasks, Mask making, Picosecond phenomena, Silicon carbide, Projection lithography

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PROCEEDINGS ARTICLE | March 22, 2006

EUV mask and chuck analysis: simulation and experimentation

Proc. SPIE. 6151, Emerging Lithographic Technologies X

KEYWORDS: Semiconductors, Lithography, Contamination, Data modeling, Interferometers, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Standards development, Focus stacking software

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PROCEEDINGS ARTICLE | November 8, 2005

Predicting wafer-level IP error due to particle-induced EUVL reticle distortion during exposure chucking

Proc. SPIE. 5992, 25th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Reticles, Glasses, Particles, Error analysis, Distortion, Finite element methods, Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Particle contamination

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PROCEEDINGS ARTICLE | November 8, 2005

Electrostatic chucking and EUVL mask flatness analysis

Proc. SPIE. 5992, 25th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Reticles, Data modeling, Error analysis, Control systems, Image quality, Photomasks, Extreme ultraviolet lithography, Analytical research, Standards development

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SPIE Journal Paper | January 1, 2005

Simulation of the coupled thermal/optical effects for liquid immersion nanolithography

Baek, So-Yeon , Wei, Alexander , Cole, Daniel , Nellis, Gregory , Yeung, Michael , Abdo, Amr , Engelstad, Roxann , Rothschild, Mordechai , Switkes, Michael

JM3 Vol. 4 Issue 01

KEYWORDS: Semiconducting wafers, Liquids, Thermal effects, Microfluidics, Wafer-level optics, Refraction, Computational fluid dynamics, Optical lithography, Microfluidic imaging, Photomasks

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PROCEEDINGS ARTICLE | December 6, 2004

Analysis and control of template distortions in Step-and-Flash Imprint Lithography templates

Proc. SPIE. 5567, 24th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Computational fluid dynamics, Lithography, Quartz, Capillaries, Silicon, Computer simulations, Nanoimprint lithography, Fluid dynamics, Liquids, Absorption

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Nanoimprint lithography (NIL) was placed on the 2004 ITRS Roadmap, thus signifying its growing potential as a viable next-generation lithography technique. A particularly promising NIL technology is Step-and-Flash Imprint Lithography in which the pattern from a quartz template is transferred into a UV-curable silicon-rich monomer. The process of squeezing the monomer film during the imprint process produces significant flow-related pressures on the template which result in out-of-plane distortions (OPD). These OPD inherently produce in-plane distortions which compromise the quality of the resulting features. A single droplet imprint process, wherein a single puddle of monomer is used to cover the entire active area, suffers from throughput limitations due to the low imprint velocities that are required to control the flow-related pressures exerted on the template. In response to these limitations, recent research has focused on a multiple droplet imprint process wherein many droplets are dispensed and coalesce during the imprint process, resulting in lower flow-related pressures. In this paper, a numerical model is described that is capable of predicting both the pressures and the template distortions during a multiple droplet imprint process. The model consists of a finite element structural model of the template interfaced to a fluid-dynamic model of the flow through the gap; the distortion of the template affects the pressure applied on the template and vice versa, therefore a coupled, fluid-structure model is required. The pressure distribution during the imprint process is described by an analytical solution to the Reynolds equation that is modified to account for the coalescing process as well as the affects of absorption and surface tension. The modified solution is developed and verified through the use of computational fluid dynamic simulations. Results are described for a nominal set of conditions and a parametric study of the effect of droplet density is presented.

PROCEEDINGS ARTICLE | December 6, 2004

Simulating the process flow of the Nikon EPL new geometry mask

Proc. SPIE. 5567, 24th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Semiconductors, Oxides, Electron beam lithography, Etching, Silicon, Photomasks, Mask making, Semiconducting wafers, Projection lithography, Device simulation

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PROCEEDINGS ARTICLE | December 6, 2004

Simulating the effects of bake process parameters on resist thermal reflow

Proc. SPIE. 5567, 24th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Polymers, Interfaces, Silicon, Convection, Photoresist processing, Semiconducting wafers, Radium, Thermal modeling, Temperature metrology

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PROCEEDINGS ARTICLE | December 6, 2004

Gas flow modeling for focused ion beam (FIB) repair processes

Proc. SPIE. 5567, 24th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Computational fluid dynamics, Gases, Computing systems, 3D modeling, Ion beams, Photomasks, Statistical modeling, Photomask technology, Systems modeling, Process modeling

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PROCEEDINGS ARTICLE | December 6, 2004

Modeling and experimental investigation of bubble entrainment for flow over topography during immersion lithography

Proc. SPIE. 5567, 24th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Refractive index, Imaging systems, Cameras, Water, Image processing, Nitrogen, Immersion lithography, Semiconducting wafers, Fluid dynamics, Liquids

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PROCEEDINGS ARTICLE | December 6, 2004

The influence of an electrostatic pin chuck on EUV mask flatness

Proc. SPIE. 5567, 24th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Reticles, Optical lithography, Electrodes, Dielectrics, Interferometry, 3D modeling, Capacitance, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography

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PROCEEDINGS ARTICLE | June 2, 2004

Effect of electrostatic chucking on EUVL mask flatness

Proc. SPIE. 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents

KEYWORDS: Semiconductors, Multilayers, Polishing, Data modeling, Finite element methods, Photomasks, Extreme ultraviolet lithography, Mask making, Surface finishing, Standards development

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PROCEEDINGS ARTICLE | June 2, 2004

Predicting microfluidic response during immersion lithography scanning

Proc. SPIE. 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents

KEYWORDS: Wafer-level optics, Refractive index, Microfluidics, Polymers, Refraction, Optical simulations, Immersion lithography, Semiconducting wafers, Liquids, Absorption

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PROCEEDINGS ARTICLE | June 2, 2004

Hard pellicle investigation for 157-nm lithography: impact on overlay

Proc. SPIE. 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents

KEYWORDS: Lithography, Reticles, Polymers, Distortion, Pellicles, Refraction, Fluorine, Semiconducting wafers, Overlay metrology, Polymer thin films

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PROCEEDINGS ARTICLE | May 28, 2004

Equivalent modeling technique for predicting the transient thermomechanical response of optical reticles during exposure

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Thermography, Reticles, Glasses, 3D modeling, Platinum, Pellicles, Photomasks, Heat flux, Semiconducting wafers, Thermal modeling

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PROCEEDINGS ARTICLE | May 28, 2004

Simulation of the coupled thermal optical effects for liquid immersion micro-/nano-lithography

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Wafer-level optics, Computational fluid dynamics, Microfluidics, Refraction, Thermal effects, Microfluidic imaging, Immersion lithography, Semiconducting wafers, Liquids, Protactinium

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PROCEEDINGS ARTICLE | May 20, 2004

Controlling template response during imprint lithography

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Lithography, Mechanics, Solids, Nanoimprint lithography, Chemical elements, Semiconducting wafers, Performance modeling, Fluid dynamics, Atmospheric modeling, Liquids

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PROCEEDINGS ARTICLE | May 20, 2004

Modeling LEEPL mask fabrication processes

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Lithography, Electrodes, Silicon, 3D modeling, Printing, Photomasks, Mask making, Semiconducting wafers, Charged-particle lithography, Device simulation

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PROCEEDINGS ARTICLE | May 20, 2004

Predicting image placement accuracy of x-ray masks

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Etching, Image processing, X-rays, Silicon, Chromium, 3D modeling, Photomasks, Silicon carbide, Semiconducting wafers, X-ray lithography

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SPIE Journal Paper | April 1, 2004

Thermal response of optical reticles: experimental verification of finite element models

Abdo, Amr , Engelstad, Roxann , Beckman, William , Lovell, Edward

JM3 Vol. 3 Issue 02

KEYWORDS: Lamps, Reticles, Xenon, Mercury, Calibration, Thermography, Thermal modeling, Light sources, Copper, Floods

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SPIE Journal Paper | January 1, 2004

Microfluidic simulations for immersion lithography

Wei, Alexander , Nellis, Gregory , Abdo, Amr , Engelstad, Roxann , Chen, Cheng-Fu , Switkes, Michael , Rothschild, Mordechai

JM3 Vol. 3 Issue 01

KEYWORDS: Semiconducting wafers, Liquids, Microfluidics, Immersion lithography, Capillaries, Computational fluid dynamics, Fluid dynamics, Computer simulations, Calcium, Refraction

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SPIE Journal Paper | January 1, 2004

Theoretical analysis of 157-nm hard pellicle system purification via a cyclic purge/fill process

Nellis, Gregory , Abdo, Amr , Engelstad, Roxann , Cotte, Eric

JM3 Vol. 3 Issue 01

KEYWORDS: Pellicles, Resistance, Oxygen, Nitrogen, Protactinium, Reticles, Finite element methods, Fluid dynamics, Optical lithography, Lithography

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PROCEEDINGS ARTICLE | December 17, 2003

Experimental investigation of hard pellicle purge processes

Proc. SPIE. 5256, 23rd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Reticles, Optical lithography, Mechanics, Photography, Nitrogen, Resistance, Distortion, Oxygen, Pellicles

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PROCEEDINGS ARTICLE | December 17, 2003

Optimization of EUVL reticle thickness for image placement accuracy

Proc. SPIE. 5256, 23rd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Reticles, Polishing, Metrology, Glasses, 3D modeling, Solids, Photomasks, Extreme ultraviolet lithography, Mask making, Device simulation

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PROCEEDINGS ARTICLE | December 17, 2003

Modeling thermal reflow of resist contact hole arrays

Proc. SPIE. 5256, 23rd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Polymers, Interfaces, Silicon, Solids, Finite element methods, Analytical research, Photoresist processing, Semiconducting wafers, Thermal modeling

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PROCEEDINGS ARTICLE | June 26, 2003

Preliminary microfluidic simulation for immersion lithography

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Computational fluid dynamics, Microfluidics, Water, Computer simulations, Immersion lithography, Liquid lenses, Semiconducting wafers, Fluid dynamics, Process modeling, Liquids

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The premise behind immersion lithography is to improve the resolution for optical lithography technology by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer. This is accomplished through the insertion of a high index liquid in place of the low index air that currently fills the gap. The fluid management system must reliably fill the lens-wafer gap with liquid, maintain the fill under the lens throughout the entire wafer exposure process, and ensure that no bubbles are entrained during filling or scanning. This paper presents a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer in immersion lithography. The objective of this feasibility study was to identify liquid candidates that meet both optical and specific fluid mechanical requirements. The mechanics of the filling process was analyzed to simplify the problem and identify those fluid properties and system parameters that affect the process. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer were developed for simulating the process. The CFD simulations were used to investigate two methods of liquid deposition. In the first, a liquid is dispensed onto the wafer as a “puddle” and then the wafer and liquid move under the lens. This is referred to as passive filling. The second method involves the use of liquid jets in close proximity to the edge of the lens and is referred to as active filling. Numerical simulations of passive filling included a parametric study of the key dimensionless group influencing the filling process and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements. For active filling, preliminary simulation results characterized the influence of the jets on fluid flow.

PROCEEDINGS ARTICLE | June 26, 2003

Effects of soft pellicle frame curvature and mounting process on pellicle-induced distortions in advanced photomasks

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Lithography, Reticles, Metrology, Mechanics, Sensors, Photography, Pellicles, Photomasks, Aluminum, Adhesives

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PROCEEDINGS ARTICLE | June 26, 2003

Strategies for predictive control of chrome stress-induced registration errors

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Reticles, Optical lithography, Etching, Manufacturing, Distortion, Image registration, Finite element methods, Photomasks, Chemical elements, Yield improvement

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PROCEEDINGS ARTICLE | June 16, 2003

EUV mask stress mapping by an experimental and hybrid finite element technique

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Reflectors, Lithography, Multilayers, Reticles, Chromium, Distortion, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Spherical lenses

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PROCEEDINGS ARTICLE | June 16, 2003

Reduction of image placement errors in EPL masks

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Lithography, Electron beam lithography, Reticles, Metrology, Silicon, Photomasks, Mask making, Optical alignment, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | June 16, 2003

Predicting local thermomechanical distortions of the 200-mm EPL mask system

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Lithography, Electron beam lithography, Electron beams, Reticles, Silicon, Photomasks, Semiconducting wafers, Thermal modeling, Projection lithography, Prototyping

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PROCEEDINGS ARTICLE | June 16, 2003

Comparison of EUV and optical device wafer heating

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Lithography, Optical lithography, Distortion, 3D modeling, Extreme ultraviolet, Extreme ultraviolet lithography, Convection, Semiconducting wafers, Performance modeling, Thermal modeling

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SPIE Conference Volume | June 16, 2003

Emerging Lithographic Technologies VII

PROCEEDINGS ARTICLE | May 28, 2003

Ultrathin-membrane EPL masks

Proc. SPIE. 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents

KEYWORDS: Carbon, Lithography, Mechanics, Silicon, Manufacturing, Scanning electron microscopy, Microelectronics, Photomasks, Silicon carbide, Photomicroscopy

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SPIE Journal Paper | April 1, 2003

Predicting overlay performance for electron projection lithography masks

Reu, Phillip , Chen, Cheng-Fu , Engelstad, Roxann , Lovell, Edward , Lercel, Michael , Wood, Obert , Mackay, R.

JM3 Vol. 2 Issue 02

KEYWORDS: Photomasks, Mask making, Manufacturing, Electron beam lithography, Performance modeling, Projection lithography, Finite element methods, 3D modeling, Device simulation, Semiconducting wafers

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PROCEEDINGS ARTICLE | December 27, 2002

Experimental and numerical studies of the response of photomask hard pellicles to acoustic excitation

Proc. SPIE. 4889, 22nd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Reticles, Silica, Glasses, Computing systems, Pellicles, Modal analysis, Photomasks, Acoustics, Adhesives

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PROCEEDINGS ARTICLE | August 1, 2002

Pellicle-induced distortions in advanced photomasks

Proc. SPIE. 4754, Photomask and Next-Generation Lithography Mask Technology IX

KEYWORDS: Reticles, Statistical analysis, Mechanics, Sensors, Numerical simulations, Image registration, Pellicles, Photomasks, Aluminum, Adhesives

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PROCEEDINGS ARTICLE | August 1, 2002

Hard pellicle study for 157-nm lithography

Proc. SPIE. 4754, Photomask and Next-Generation Lithography Mask Technology IX

KEYWORDS: Lithography, Reticles, Silica, Interferometers, Quartz, Glasses, Pellicles, Refraction, Photomasks, Aluminum

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PROCEEDINGS ARTICLE | August 1, 2002

Experimental and numerical studies of the effects of materials and attachment conditions on pellicle induced distortions in advanced photomasks

Proc. SPIE. 4754, Photomask and Next-Generation Lithography Mask Technology IX

KEYWORDS: Lithography, Reticles, Error analysis, Manufacturing, Pellicles, Photomasks, Aluminum, Adhesives, Performance modeling, Temperature metrology

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SPIE Conference Volume | July 1, 2002

Emerging Lithographic Technologies VI

PROCEEDINGS ARTICLE | July 1, 2002

Mechanical modeling of the reticle and chuck for EUV lithography

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Multilayers, Reticles, Glasses, Particles, Reflectivity, Finite element methods, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Standards development

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PROCEEDINGS ARTICLE | July 1, 2002

Thermomechanical global response of the EUVL wafer during exposure

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Lithography, Reticles, Interfaces, Distortion, Finite element methods, Thermal analysis, Extreme ultraviolet lithography, Optical alignment, Semiconducting wafers, Thermal modeling

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PROCEEDINGS ARTICLE | July 1, 2002

Complete system of nanoimprint lithography for IC production

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Actuators, Lithography, Polymers, Ultraviolet radiation, Silicon, Inspection, Photomasks, Optical alignment, Semiconducting wafers, Binary data

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PROCEEDINGS ARTICLE | July 1, 2002

Thermomechanical modeling of the pin-chucked EUV reticle during exposure

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Lithography, Reticles, Particles, Nitrogen, 3D modeling, Extreme ultraviolet, Extreme ultraviolet lithography, Helium, Semiconducting wafers, Thermal modeling

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PROCEEDINGS ARTICLE | July 1, 2002

Predicting overlay performance for electron projection lithography masks

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Electron beam lithography, Etching, Silicon, Manufacturing, Control systems, Finite element methods, Photomasks, Mask making, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | March 11, 2002

Mask-related distortions of modified fused silica reticles for 157-nm lithography

Proc. SPIE. 4562, 21st Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Electron beam lithography, Reticles, Silica, Mechanics, Chromium, 3D modeling, Pellicles, Photomasks, Device simulation

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PROCEEDINGS ARTICLE | March 11, 2002

Numerical and experimental studies of pellicle-induced photomask distortions

Proc. SPIE. 4562, 21st Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Reticles, Silica, Pellicles, Refraction, Photomasks, Aluminum, Adhesives, Performance modeling, Temperature metrology

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PROCEEDINGS ARTICLE | September 14, 2001

Experimental model verification of the thermal response of optical reticles

Proc. SPIE. 4346, Optical Microlithography XIV

KEYWORDS: Thermography, Optical components, Light sources, Reticles, Optical lithography, Calibration, Copper, 3D modeling, Platinum, Thermal modeling

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PROCEEDINGS ARTICLE | September 14, 2001

Mechanical analysis of hard pellicles for 157-nm lithography

Proc. SPIE. 4346, Optical Microlithography XIV

KEYWORDS: Optical components, Lithography, Reticles, Silica, Pellicles, Modal analysis, Finite element methods, Aluminum, Velocity measurements, Adhesives

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PROCEEDINGS ARTICLE | August 20, 2001

Vibrational analysis of 200-mm EPL masks

Proc. SPIE. 4343, Emerging Lithographic Technologies V

KEYWORDS: Metrology, Silicon, Inspection, 3D modeling, Photomasks, Shape analysis, Aluminum, Performance modeling, Charged-particle lithography, Mask cleaning

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PROCEEDINGS ARTICLE | August 20, 2001

Thermomechanical modeling of the EUV reticle during exposure

Proc. SPIE. 4343, Emerging Lithographic Technologies V

KEYWORDS: Lithography, Reticles, Cameras, Glasses, Interfaces, Reflectivity, 3D modeling, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | January 22, 2001

Pellicle-induced distortions in advanced optical reticles

Proc. SPIE. 4186, 20th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Reticles, Sensors, Error analysis, Pellicles, Finite element methods, Photomasks, Aluminum, Analytical research, Adhesives

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PROCEEDINGS ARTICLE | January 22, 2001

SCALPEL mask parametric study

Proc. SPIE. 4186, 20th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Electron beam lithography, Scattering, Metals, Kinematics, Cobalt, Photomasks, Projection lithography, Charged-particle lithography, Device simulation

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PROCEEDINGS ARTICLE | January 22, 2001

Predicting thermomechanical distortions of optical reticles for 157-nm technology

Proc. SPIE. 4186, 20th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Thermography, Reticles, Silica, Signal attenuation, 3D modeling, Pellicles, Photomasks, Convection, Heat flux, Semiconducting wafers

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PROCEEDINGS ARTICLE | January 22, 2001

Localized resist heating due to electron-beam patterning during photomask fabrication

Proc. SPIE. 4186, 20th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Electron beam lithography, Electron beams, Optical lithography, Diffusion, Thermal effects, Photomasks, Picosecond phenomena, Spatial resolution, Critical dimension metrology, Temperature metrology

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PROCEEDINGS ARTICLE | July 21, 2000

Pattern transfer distortions in IPL and EPL masks with pattern density gradients

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Lithography, Optical lithography, Mechanics, Error analysis, Silicon, Ion beams, Photomasks, Mask making, Chemical elements, Projection lithography

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PROCEEDINGS ARTICLE | July 21, 2000

Thermomechanical simulations for microbeam reduction lithography

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Lithography, Ions, Silicon, Ion beams, Photomasks, Chemical elements, Semiconducting wafers, Thermal modeling, Projection lithography, Systems modeling

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PROCEEDINGS ARTICLE | July 21, 2000

Film stress changes during anodic bonding of NGL masks

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Lithography, Data modeling, Etching, X-rays, Silicon, Chromium, Photomasks, Mask making, Semiconducting wafers, Wafer bonding

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PROCEEDINGS ARTICLE | July 21, 2000

Thermomechanical modeling of the SCALPEL mask during exposure

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Lithography, Electron beams, Scattering, Silicon, Finite element methods, Thermal analysis, Photomasks, Semiconducting wafers, Thermal modeling, Charged-particle lithography

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PROCEEDINGS ARTICLE | July 21, 2000

Predicting pattern transfer distortions during EUV mask fabrication

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Oxides, Lithography, Multilayers, Etching, Silicon, 3D modeling, Photomasks, Extreme ultraviolet, Mask making, Photoresist processing

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PROCEEDINGS ARTICLE | July 21, 2000

Comparison of substrate curvature and resonant frequency thin film stress mapping techniques

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Thin films, Lithography, Sensors, Etching, Composites, Diagnostics, Photomasks, Silicon carbide, Semiconducting wafers, Received signal strength

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PROCEEDINGS ARTICLE | July 5, 2000

Influence of film stress on advanced optical reticle distortions

Proc. SPIE. 4000, Optical Microlithography XIII

KEYWORDS: Thin films, Reticles, Metrology, Optical lithography, Etching, Chromium, Photomasks, Mask making, Optical alignment, Chemical elements

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PROCEEDINGS ARTICLE | December 30, 1999

Placement measurement and FE modeling results for distortion control of stencil masks

Proc. SPIE. 3873, 19th Annual Symposium on Photomask Technology

KEYWORDS: Oxides, Electron beam lithography, Etching, Quartz, Silicon, Lamps, Distortion, Semiconductor lasers, Photomasks, Semiconducting wafers

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